Results 51 to 60 of about 13,762 (298)
Interdiffusion Between Mo and TiAl
, 1992 Diffusion couple experiments were carried out for Mo/γ-TiAl at 900, 1000 and 1100°C for periods of time ranging from 121 to 553 hrs. Using the Boltzmann-Matano analysis, the two diagonal interdiffusion coefficients for the two phases formed in these ...
Y. Austin Chang +2 more
core +1 more source
Advanced Materials, EarlyView.A sulfur‐doped lignin‐derived carbon‐coated Ni‐NiO‐MoO2 nanorod array was synthesized, exhibiting enhanced UOR performance ‐ due to lattice‐strain and built‐in electric field effects by multiphase heterogeneous interface in Ni‐NiO‐MoO2@SC, excellent corrosion resistance, mass‐transport ability, and long‐term stability (500 mA cm−2 at 1.53 V for 500 h ...
Jiawei Li +9 more
wiley +1 more source
Fe Mg Interdiffusion in (Mg,Fe)O
, 2005 International audienceWe have performed a series of interdiffusion experiments on magnesiowüstite samples at room pressure, temperatures from 1,320° to 1,400°C, and oxygen fugacities from 10?1.0 Pa to 10?4.3 Pa, using mixed CO/CO2 or H2/CO2 gases.
Sproni, Caroline +2 more
core +1 more source
Volatile Memristive Devices With Tunable Temporal Dynamics For Event‐Based Sensing
Advanced Materials, EarlyView.Tunable volatile memristive devices can serve various neural‐inspired tasks that require different time windows of information retention. The ionic‐based volatility of the presented Pt/a‐STO/TaOx/Ta device stack can be reproducibly and controllably tuned in multiple ways.
Dimitrios Spithouris +7 more
wiley +1 more source
Tailoring of Creep Regime Domain Wall Dynamics in Perpendicularly Magnetized Pd/Co/Pd Trilayers
Advanced Materials InterfacesUnderstanding magnetic domain wall (DW) dynamics is vital for improving the performance of heavy metal/ferromagnet based spintronic devices. Pd/Co/Pd multilayers hosting perpendicular magnetic anisotropy and interfacial Dzyaloshinskii‐Moriya interaction ...
Anurag Keloth +8 more
doaj +1 more source
Enhanced Interdiffusion Effects in Compound Semiconductors
, 1987 This paper reviews the principal processes involved in the enhanced interdiffusion of elements across interfaces between two III-V compound semiconductors.
P. M. Petroff
core +1 more source
Advanced Materials Interfaces, EarlyView.A single‐solvent acetone strategy simultaneously restores laser‐ablated PMMA surfaces and enables high‐strength bonding for microfluidic device fabrication. The process produces smooth, optically clear channels, achieves bonding strengths up to 27.3 MPa, and forms leak‐free devices within 25 min, providing a rapid and accessible route to robust PMMA ...
Sadık Koç, H. Cumhur Tekin
wiley +1 more source
Interdiffusion coefficients and atomic mobilities in fcc Cu-Fe-Mn alloys [PDF]
Journal of Mining and Metallurgy. Section B: Metallurgy, 2014 In the present work, the interdiffusion coefficients in fcc Cu-Fe-Mn alloys were experimentally determined via a combination of solid/solid diffusion couples, electron probe microanalysis (EPMA) technique and Matano-Kirkaldy method. Based on the
Li J. +6 more
doaj +1 more source
Interdiffusion in the Cu–Pt system
, 2014 Experiments are conducted to study interdiffusion in a complete solid solution as well as in ordered phases in the Cu–Pt system. The variation of the interdiffusion coefficient and the activation energy with composition of the solid solution is explained
Kiruthika, Perumalsamy +2 more
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Advanced Materials Interfaces, EarlyView.The thermal budget imposed during oxide passivation is revealed as a key design parameter for Pt resistance temperature detectors in Organ‐on‐a‐Chip platforms. By establishing a direct processing–microstructure–device performance relationship, this work transforms an unavoidable fabrication step into a strategy for reliable integrated temperature ...
Gabriel M. Ferreira +4 more
wiley +1 more source