Results 161 to 170 of about 43,122 (263)

Artificial Synaptic Device Based on Self‐Aligned c‐In2O3 TFTs With an Ultrathin MgO Interlayer

open access: yesAdvanced Materials Technologies, EarlyView.
A coplanar synaptic thin‐film transistor based on crystalline In2O3 is demonstrated using a PECVD SiO2 gate insulator and an ultrathin MgO interlayer. The MgO interlayer suppresses excessive carrier density and may facilitate proton‐related interfacial polarization, resulting in stable counterclockwise hysteresis and synaptic behavior.
Samiran Roy, Jewel Kumer Saha, Jin Jang
wiley   +1 more source

In Situ Integrated Titanium Oxide Synaptic Phototransistor Enabling Multimodal Plasticity and Noise‐Robust Selective Attention

open access: yesAdvanced Materials Technologies, EarlyView.
An in situ integrated TiO2/SiOx/Al2O3 synaptic phototransistor couples ultraviolet and electrical stimuli within a scalable, CMOS‐compatible oxide stack. Multimodal plasticity, spike‐timing‐dependent learning, and bee‐inspired associative conditioning are achieved through trap‐mediated temporal dynamics.
Youngbin Yoon   +5 more
wiley   +1 more source

Nature‐Derived Chitosan Biopolymer: A Promising Candidate for Sustainable Electronics

open access: yesAdvanced Materials Technologies, EarlyView.
In the creation of environmentally friendly devices, nature‐derived chitosan biopolymer is a promising contender for sustainable electronic research. It can be utilized to create more ecologically friendly scalable gadgets and has a variety of uses in different active layers of electronics.
Joshua McDonald   +3 more
wiley   +1 more source

Unveiling the Hidden Geometry of OECTs: Contact‐Semiconductor Overlap Driven Errors in Volumetric Capacitance

open access: yesAdvanced Materials Technologies, EarlyView.
This work examines how contact–semiconductor overlap influences volumetric capacitance extraction in organic electrochemical transistors as device dimensions shrink. It shows that neglecting overlap leads to systematic, geometry‐driven errors in capacitance values.
Renan Colucci   +7 more
wiley   +1 more source

Ultrathin and Flexible Organic Light‐Addressable Potentiometric Sensors

open access: yesAdvanced Materials Technologies, EarlyView.
The first ultrathin, fully organic, and flexible light‐addressable potentiometric sensor (LAPS) is demonstrated. With a thickness of only 2.3–2.9 µm, this standalone film offers sensitivity to electrolyte potential and stable performance for over 170 days.
Ami Ichikawa   +6 more
wiley   +1 more source

O Radical‐Induced n‐to‐p Transition in PbS Quantum Dots Enabling Enhanced and Stable Photogating in QD/IGZO SWIR Phototransistors

open access: yesAdvanced Materials Technologies, EarlyView.
An O radical‐induced n‐to‐p transition in PbS quantum dots (QDs) is achieved via atmospheric Ar/O2 treatment, enabling favorable band alignment and stable photogating in PbS QD/IGZO phototransistors. Interfacial defect passivation and Fermi‐level modulation, confirmed by XPS and UPS analyses, effectively suppress dark current, induce a positive VTH ...
MD Redowan Mahmud Arnob   +4 more
wiley   +1 more source

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