Results 211 to 220 of about 44,875 (267)

Ion mobility spectrometers with doped gases

Talanta, 2008
Ion mobility spectrometry (IMS) is an instrumental technique used successfully for the detection of wide range of organic compounds in the gas phase. In this paper, advances in using special substances called dopants for gases flowing through IMS detectors are reviewed.
Jarosław, Puton, Marjaana, Nousiainen, Mika, Sillanpää   +2 more
openaire   +2 more sources

Ion Beam Doping of Silicon Nanowires

Nano Letters, 2008
We demonstrate n- and p-type field-effect transistors based on Si nanowires (SiNWs) implanted with P and B at fluences as high as 10(15) cm (-2). Contrary to what would happen in bulk Si for similar fluences, in SiNWs this only induces a limited amount of amorphization and structural disorder, as shown by electrical transport and Raman measurements. We
Alan, Colli, Andrea, Fasoli, Carsten, Ronning, Simone, Pisana, Stefano, Piscanec, Andrea C, Ferrari   +5 more
openaire   +2 more sources

“n-Doping” of Deltahedral Zintl Ions

Journal of the American Chemical Society, 2011
We report a simple and efficient method for replacing germanium atoms in deltahedral Ge(9)(4-) clusters with Sb or Bi. While reactions of Ge(9)(4-) with EPh(3) (E = Sb, Bi) at room temperature are known to produce mono- and disubstituted clusters [Ph(2)E-Ge(9)-Ge(9)-EPh(2)](4-) and [Ph(2)E-Ge(9)-EPh(2)](2-), respectively, at elevated temperatures or ...
Miriam M, Gillett-Kunnath, Allen G, Oliver, Slavi C, Sevov   +2 more
openaire   +2 more sources

On the Origin and Underappreciated Effects of Ion Doping in Silica

Small, 2015
The origin of selectivity in the hollowing of silica nanoparticles is investigated to further understand silica. It is realized that, during the synthesis, the silica precursors are essentially ion‐paired polyelectrolytes, whose nucleation depends on the concentration of the counter ions, and most importantly, the size/length of the poly(silicic acid).
Song, Xiaohui, Ding, Tao, Yao, Lin, Lin, Ming, Lee, Rachel Siew Tan, Liu, Cuicui, Sokol, Katarzyna, Yu, Le, Lou, David Xiong Wen, Chen, Hongyu   +9 more
openaire   +3 more sources

Ion implantation doping of Si for optoelectronic applications

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1996
Abstract We show that the major problems hampering efficient performances of Si in optoelectronic applications, i.e. the achievement of efficient light emission and fast modulation, can be successfully approached by a proper engineering of its optical properties.
S Coffa, G Franzò, F Priolo, S Libertino, R Mosca, E Gombia, C Spinella   +6 more
openaire   +1 more source

Ion doping of gallium arsenide

Soviet Physics Journal, 1980
The survey presented shows that despite the intensive study of the physical problems of ion implantation in GaAs, there is still a number of questions to investigate. Among them are: The role of anomalous diffusion and channeling in the formation of concentration profiles, the anomalous diffusion mechanism, the influence of radiation defects and ...
P. V. Pavlov, E. I. Zorin, D. I. Tetel'baum   +2 more
openaire   +1 more source

The doping of semiconductors by ion bombardment

Nuclear Instruments and Methods, 1965
Abstract An investigation of the effects of bombarding various semiconductors (Si, GaAs, CdS and ZnS) with ions of the rare earth elements thulium and neodymium has been carried out. Preliminary measurements of the electrical and optical properties of the resulting bombarded layers will be described.
J.F. Gibbons, J.L. Moll, N.I. Meyer
openaire   +1 more source

Doping of silicon by ion implantation

Nuclear Instruments and Methods, 1965
Abstract The feasibility of doping silicon by directly implanting impurity atoms has been demonstrated. Both phosphorus and boron ions have been successfully implanted in silicon to produce electrical junctions. Junctions as deep as 1.2 μm have been produced by phosphorus ions having energies the order of 80 keV.
K.E. Manchester, C.B. Sibley, G. Alton
openaire   +1 more source

Ion-implantation doping of semiconductors

Journal of Materials Science, 1967
For some time now, the bombardment of solids by heavy ions has been an active field of research. It has been carried out for a variety of reasons, for example with a view to increasing knowledge of atomic collision processes and how they relate to such phenomena as secondary electron emission and sputtering.
L. N. Large, R. W. Bicknell
openaire   +1 more source

Doping of GaN by ion implantation

MRS Proceedings, 2000
AbstractIn this work we report the structural and optical properties of ion implanted GaN. Potential acceptors such as Ca and Er were used as dopants. Ion implantation was carried out with the substrate at room temperature and 550 °C, respectively. The lattice site location of the dopants was studied by Rutherford backscattering/channeling combined ...
Eduardo J. Alves, C. Liu, Maria F. da Silva, José C. Soares, Rosário Correia, Teresa Monteiro   +5 more
openaire   +1 more source