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Doping of fullerenes by ion implantation
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1993Abstract C 60 films have been implanted with 30 keV K + ions with doses from 1×10 14 to 1×10 16 cm −2 at target temperatures up to 350°C. Conductivity measurements performed in situ show a decrease in sheet resistivity with increasing dose for fullerene samples implanted at elevated temperatures, whereas implantation at room temperature results ...
J. Kastner +4 more
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ZnO doping by ion implantation
SPIE Proceedings, 2005Preliminary studies on ZnO single crystals implanted with In (donor), As (acceptor) and 111 Ag (acceptor) are presented. Each dopants electronic structure was investigated by means of positron annihilation lifetime (PALS) and photoluminescence (PL) measurements. For some of the crystals, the lifetime spectra revealed the presence of effective positron
M. A. Hernandez-Fenollosa +2 more
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Solar Cells, 1989
Abstract The possibility of using ion-assisted doping during growth of p-CdTe films for solar cells has been investigated, to obtain higher doping densities than previously obtained wtih conventional film deposition processes. For the first time, controlled doping has been demonstrated with low-energy phosphorus ions to obtain hole densities of up to
A.L. Fahrenbruch +5 more
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Abstract The possibility of using ion-assisted doping during growth of p-CdTe films for solar cells has been investigated, to obtain higher doping densities than previously obtained wtih conventional film deposition processes. For the first time, controlled doping has been demonstrated with low-energy phosphorus ions to obtain hole densities of up to
A.L. Fahrenbruch +5 more
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DOPING OF SILICON BY ION IMPLANTATION
Applied Physics Letters, 1968Radiation damages created in silicon single crystals bombarded with 10-keV aluminum ions were examined by means of electron diffraction method. A deep penetration of aluminum ion in silicon was observed, extending to 0.58 μ. This penetration was depressed by removing the bombarded surface layer about 800 Å in thickness before annealing.
Tadatsugu Itoh +2 more
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Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2008
The morphology and structure of ZrO2 films grown in steam-water medium on an ion-doped surface of zirconium and its E110 and E635 alloys have been studied. It has been found that the properties of oxide films are determined mostly by the conditions of ion-implantation doping at large oxidation times.
B. A. Kalin +3 more
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The morphology and structure of ZrO2 films grown in steam-water medium on an ion-doped surface of zirconium and its E110 and E635 alloys have been studied. It has been found that the properties of oxide films are determined mostly by the conditions of ion-implantation doping at large oxidation times.
B. A. Kalin +3 more
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Crystal ``Doping'' by Ion Bombardment
Review of Scientific Instruments, 1961>The doping of metals and semiconductors with highly resolved ion beams eliminates reagent impurity contamination, provides high isotopic enrichment, and allows cross section determinations with 10/sup -8/ to 10/sup -11/ g of material thus eliminating self-shielding.
F. M. Rourke +2 more
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Ion—Ion Interactions in Rare-Earth-Doped LaF3
The Journal of Chemical Physics, 1965A systematic study of quantum efficiencies and lifetimes has been carried out for the visible fluorescences of Pr3+ in single-crystal LaF3. An analysis of the results as a function of Pr3+ concentration is given in terms of a two-site model in which a Pr3+ ion can either be in an isolated site or in a site where it is coupled to other impurity ions ...
M. R. Brown +2 more
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Copper-doped ion-exchanged waveguide characterization
Journal of Modern Optics, 1998Abstract Copper-doped planar glass waveguides were prepared by the ion-exchange process. Refractive index and compositional profiles, obtained by m-line spectroscopy and secondary-ion mass spectrometry respectively were used to study the waveguide optical behaviour and the copper diffusion into the glass.
GONELLA, Francesco +3 more
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Ion implantation doping of semiconductors
International Materials Reviews, 1988AbstractAn overview of the use of ion implantation to dope silicon and gallium arsenide is presented. The problems associated with epitaxial regrowth in the solid phase and annealing, including rapid thermal annealing, are discussed in detail. Channelling, prior amorphisation, very high energy (Me V) implants, and silicon-on-insulator structures are ...
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Electrochemical Doping of Halide Perovskites with Ion Intercalation
ACS Nano, 2017Halide perovskites have recently been investigated for various solution-processed optoelectronic devices. The majority of studies have focused on using intrinsic halide perovskites, and the intentional incoporation of dopants has not been well explored.
Qinglong Jiang +14 more
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