Results 231 to 240 of about 1,366,968 (297)

Ferroptosis Suppression by the M6A Reader IGF2BP1 Underlies Gemcitabine Resistance in Pancreatic Ductal Adenocarcinoma

Advanced Science, EarlyView.
IGF2BP1 promotes gemcitabine resistance in pancreatic cancer by stabilizing m6A‐modified FTH1 transcripts and protecting them in stress granules, thereby suppressing ferroptosis. Pharmacological inhibition of IGF2BP1 disrupts this protective pathway, restores ferroptotic sensitivity, and enhances gemcitabine efficacy in resistant tumors.
Ying‐Qin Zhu, Yue Huang, Jing‐Yuan Ye, Si‐Yuan Lu, Zhi‐De Liu, Ming‐Jian Ma, De‐Liang Fang, Zi‐Yi Zhao, Jin‐Zhao Xie, Jiao Chen, Xiao‐Yu Yin   +10 more
wiley   +1 more source

A 1.6 kV Ga₂O₃ Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10^-5 A/cm² Enabled by Field Plates and N Ion-Implantation Edge Termination. [PDF]

Nanomaterials (Basel)
Zhou X, Yang J, Zhang H, Liu Y, Xie G, Liu W.   +5 more
europepmc   +1 more source

Robust Stitching Interface and Deep Learning Empowered Hydrogel Human‐Machine Interface

Advanced Science, EarlyView.
A molecular design strategy is presented that exploits synergistic carboxylate anion–quaternary ammonium interactions to simultaneously strengthen the hydrogel–PET interface and the bulk hydrogel network. Integrated with deep learning signal processing, the stable hydrogel–PET interface enables consistent signal acquisition and reliable human‐machine ...
Hao Dong, Yiming Luo, Chuanliu Liu, Mahamood Modupe Rasheedat, Wenjiayi Tan, Fangyu Zhao, Yixue Zhang, Chris Connor, Hua Hou, Hamdy Khamees Thabet, Ben Bin Xu, Huige Wei   +11 more
wiley   +1 more source

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Ion implantation in fullerenes

Fuel and Energy Abstracts, 1996
Ion implantation of C60 fullerite induces large modifications such as amorphization, polymerization, and doping depending on the implant conditions.
J. Kastner, L. Palmetshofer
openaire   +1 more source

Ion Implantation

2023
This chapter discusses the ion implantation process of silicon processing technology in depth. The chapter gives an in-depth insight into various aspects of the ion implantation process and ion-implanted silicon systems commonly encountered in a silicon process.
Sunipa Roy, Chandan Kumar Ghosh, Sayan Dey, Abhijit Kumar Pal   +3 more
openaire   +2 more sources

Ion Implantation of Polythiophene

1987
Polythiophene as a free-standing film has been ion implanted with F+-ions having 25 keV energy. A rapid conductivity increase starts at doses between 5·1015…5 .1016 F+/cm2. The conductivity changes by 6 orders of magnitude being 1.10−2 Ω−crn−1 at a highest dose of 1·1017 F+/cm2. RBS spectra show that a 0.35...0.40 μm surface layer is damaged.
Isotalo Heikki, Stubb Henrik, Saarilahti Jaakko   +2 more
openaire   +2 more sources

A comparison of plasma immersion ion implantation with conventional ion implantation

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1993
Abstract Plasma immersion ion implantation has a potential advantage over conventional line-of-sight ion implantation in being able to provide a uniform dose over a nonplanar surface. Operating regimes are different for each process leading to different surface modification characteristics.
Kenny, MJ, Wielunski, LS, Tendys, J, Collins, GA   +3 more
openaire   +2 more sources

Transport of ions during ion implantation

Physical Review E, 1996
An efficient scheme for the description of long-mean-free-path particle transport at a kinetic level has been extended to a case where particle distributions are highly anisotropic: implantation of ions into a solid. The method calculates the scattering rate of particles throughout a region and obtains the particle distribution from the scattering rate.
, Parker, , Hitchon, , Keiter
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Ion implantation in superconductors

Radiation Effects, 1975
The possibility to introduce controlled amounts of impurities into material with the additional advantage to overcome restrictions due to solubility and diffusibility offers an attractive research tool to study near surface properties of material in a systematic manner.
openaire   +1 more source

Ion implantation technology and ion sources

Review of Scientific Instruments, 2014
Ion implantation (I/I) technology has been developed with a great economic success of industries of VLSI (Very Large-Scale Integrated circuit) devices. Due to its large flexibility and good controllability, the I/I technology has been assuming various challenging requirements of VLSI evolutions, especially in advanced evolutional characteristics of ...
openaire   +2 more sources