Results 41 to 50 of about 3,441,284 (367)
Low-energy Se ion implantation in MoS 2 monolayers
In this work, we study ultra-low energy implantation into MoS2 monolayers to evaluate the potential of the technique in two-dimensional materials technology. We use 80Se+ ions at the energy of 20 eV and with fluences up to 5.0·1014 cm−2. Raman spectra of
Minh N. Bui +18 more
doaj +1 more source
Boron implantation with in-situ dynamic annealing is used to produce highly conductive sub-surface layers in type IIa (100) diamond plates for the search of a superconducting phase transition.
Bowers, H. +6 more
core +1 more source
Elemental Analysis of Coffee with Ion Beam Analytical Techniques
In this review, we present a compilation of results from studies of coffee carried out with accelerator-based analytical techniques employing swift ions. The fundamentals of these techniques are presented in detail.
Rafaela Debastiani +5 more
doaj +1 more source
Transmission engineering components need to fulfill requirements for adequate wear resistance and fatigue resistance, which are related to their surface properties.
Chunling Xu +5 more
doaj +1 more source
3-dimensional electrode patterning within a microfluidic channel using metal ion implantation [PDF]
The application of electrical fields within a microfluidic channel enables many forms of manipulation necessary for lab-on-a-chip devices. Patterning electrodes inside the microfluidic channel generally requires multi-step optical lithography.
Adleman, James R. +5 more
core +2 more sources
Accelerating degradation rate of pure iron by zinc ion implantation
Pure iron has been considered as a promising candidate for biodegradable implant applications. However, a faster degradation rate of pure iron is needed to meet the clinical requirement.
T. Huang, Yufeng Zheng, Yong Han
semanticscholar +1 more source
Endometriosis-associated pain has debilitating effects on the quality of life of patients. Despite its high prevalence in reproductive-aged women, the pathophysiology is still unknown, impeding the development of targeted treatment approaches.
Eleonora Persoons +9 more
doaj +1 more source
Measurement and Simulation of Ultra-Low-Energy Ion–Solid Interaction Dynamics
Ion implantation is a key capability for the semiconductor industry. As devices shrink, novel materials enter the manufacturing line, and quantum technologies transition to being more mainstream.
Michael Titze +7 more
doaj +1 more source
Hydrogen induced optically-active defects in silicon photonic nanocavities [PDF]
This work was supported by Era-NET NanoSci LECSIN project coordinated by F. Priolo, by the Italian Ministry of University and Research, FIRB contract No. RBAP06L4S5 and by the EPSRC UKSp project.
Boninelli, S. +10 more
core +1 more source
Spectroscopic ellipsometry modelling of Cr+ implanted copper oxide thin films
In this paper, we present modelling of spectroscopic ellipsometry data. The measured samples are thin films of copper oxides modified with the ion implantation method. The samples were prepared using reactive magnetron sputtering.
K. Ungeheuer +3 more
doaj +1 more source

