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Oxygen Attachment Dissociation of Protonated Reserpine and Its Analogs. [PDF]
Rapid Commun Mass SpectromLi JG +5 more
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Sheath-Liquid CE-MS Interface: A Robust Infusion Platform for Native IMS-MS Analysis of Protein Assemblies and Their Conformers. [PDF]
J Mass SpectromPathak K, Brinkman D, Gomes FP.
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A silicon microneedle array atmospheric pressure plasma ionization source for real-time trace gas chemical analysis. [PDF]
Microsyst NanoengChew BS +6 more
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Review of Scientific Instruments, 1949
An ion source for particle accelerators is described. The ion source utilizes an axial magnetic field for collimation of ion and electron beams and provides an electric field-free region for ion formation. The ion source has afforded yields of 500 microamperes of resolved protons when used in conjunction with a 200-kv high voltage set. A feature of the
C, BAILEY, D L, DRUKEY, F, OPPENHEIMER
exaly +3 more sources
An ion source for particle accelerators is described. The ion source utilizes an axial magnetic field for collimation of ion and electron beams and provides an electric field-free region for ion formation. The ion source has afforded yields of 500 microamperes of resolved protons when used in conjunction with a 200-kv high voltage set. A feature of the
C, BAILEY, D L, DRUKEY, F, OPPENHEIMER
exaly +3 more sources
Canadian Journal of Research, 1948
Positive ions are formed in a low pressure electrodeless discharge which is excited by the radio-frequency field of a coil coupled to a 15 Mc. per sec. oscillator. The ions are extracted from the discharge through a pumping canal (2 mm. in diameter × 12 mm. in length) by a simple arrangement of electrodes. After further focusing and acceleration to 50
A J, BAYLY, A G, WARD
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Positive ions are formed in a low pressure electrodeless discharge which is excited by the radio-frequency field of a coil coupled to a 15 Mc. per sec. oscillator. The ions are extracted from the discharge through a pumping canal (2 mm. in diameter × 12 mm. in length) by a simple arrangement of electrodes. After further focusing and acceleration to 50
A J, BAYLY, A G, WARD
openaire +2 more sources
Ion sources for ion machining applications
12th International Electric Propulsion Conference, 1976Ion sources with beam diameters of 2.5, 10, and 20 cm have been developed for ion machining applications. All three of these sources use carbon grids to minimize accelerator grid sputtering. A new starting circuit Is also employed that uses only passive components for initiation of the discharge. The two larger sources use a flat multipole chamber with
Harold R. Kaufman +2 more
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Ion implantation technology and ion sources
Review of Scientific Instruments, 2014Ion implantation (I/I) technology has been developed with a great economic success of industries of VLSI (Very Large-Scale Integrated circuit) devices. Due to its large flexibility and good controllability, the I/I technology has been assuming various challenging requirements of VLSI evolutions, especially in advanced evolutional characteristics of ...
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Analysis of magnetron ion sources and PIG ion sources
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989Abstract Magnetron ion sources and PIG ion sources are sources of intense negative ion beams and multiply-charged positive and negative ion beams. They are composed of two electrodes, a sheath and a plasma. The author has classified them into magnetron (MG), inverse magnetron (IM), planar magnetron and Penning ionization gauge (PIG) ion sources.
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RF Negative Ion Sources and Polarized Ion Sources
2016The requirement of a neutral beam injection system with hydrogen or deuterium beam energy up to 1 MeV for the ITER project has recently triggered new research on negative ion sources, from production to acceleration and neutralization before the injection in the tokamak.
N. Ippolito +4 more
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Ion sources for ion implantation technology (invited)
Review of Scientific Instruments, 2014Ion sources for ion implantation are introduced. The technique is applied not only to large scale integration (LSI) devices but also to flat panel display. For LSI fabrication, ion source scheduled maintenance cycle is most important. For CMOS image sensor devices, metal contamination at implanted wafer is most important.
Shigeki, Sakai +4 more
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