Results 231 to 240 of about 11,137 (263)
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Electronic Defects in Silicon after Transient Isothermal Annealing

MRS Proceedings, 1983
ABSTRACTWe have investigated trap levels in silicon after Thermal Pulse Annealing (TPA). Three different annealing systems consisting of tungsten lamps or a graphite heater have been applied. Trap levels induced in different silicon materials (Cz, FZ, Epi) after TPA have been studied by DLTS and admittance spectroscopy. In boron-doped epitaxial silicon
G. Pensl   +5 more
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Isothermal annealing of cold-rolled high-purity nickel

Materials Science and Engineering: A, 2008
Abstract Electron backscattered patterns have been employed to reveal the details of the texture evolution in 90%, 95% and 97.5% cold-rolled, polycrystalline, high-purity nickel specimens after 1 h anneals at a variety of temperatures. The results show that increasing the thickness reduction of cold-rolling both strengthened the cube texture ...
H. Chang, I. Baker
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Peculiarities of Phase Formation in TbBO3 during Isothermal Annealing

Physics of the Solid State, 2019
Detailed X-ray studies of changes in the structure of terbium orthoborate TbBO3 in the course of successive high-temperature isothermal annealing of the initial mixture in the form of an amorphous precursor and in the form of a homogenized mixture of microcrystalline Tb7O12 and B2O3 powders have been carried out. It is shown that the formation of TbBO3
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An apparatus for isothermal annealing and crystallisation of amorphous semiconducting films

Journal of Physics E: Scientific Instruments, 1983
An apparatus for isothermal annealing and study of crystallisation temperatures and activation energies in amorphous semiconductors is described. The temperature treatment is performed in a high-vacuum chamber with an ambient argon gas maintained during the annealing time.
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Isothermal annealing of reactor irradiated crystalline chemical compounds

Journal of Inorganic and Nuclear Chemistry, 1968
Abstract The isothermal annealing of crystalline potassium chromate and trisethylenediamine cobalt(III) nitrate irradiated in a nuclear reactor has been extensively examined. A total of 1200 analyses were carried out to construct, in a more precise form, isothermal curves.
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Isothermal annealing of ion-bombardment-induced amorphousness in semiconductors

Journal of Physics D: Applied Physics, 1996
A theoretical model is presented to describe the isothermal annealing of semiconductors partially amorphized by ion bombardment. The annealing behaviour of amorphous zones is approximated by first-order reaction kinetics and the increasing complexity of amorphousness with the fraction of material amorphized is approximated by a population of activated ...
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An isothermal anneal study of carbonyl iron

Journal of the Franklin Institute, 1955
L. Muldawer, F.E. Jaumot
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Swelling of irradiated beryllium during isothermal annealing

Soviet Atomic Energy, 1973
G. A. Sernyaev   +2 more
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