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Competitive annealing mediated isothermal amplification of nucleic acids
The Analyst, 2018 A novel nucleic acid isothermal amplification method with high specificity, efficiency and rapidity was developed.
Rui Mao +5 more
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The isothermal annealing of boron implanted silicon
Radiation Effects, 1971Abstract Isothermal annealing studies of boron implanted silicon have been made at temperatures above 600°C for boron doses in the range of 1014 to 1015 ions/cm2. A 5 eV activation energy is obtained in the temperature range 600°C to 900°C. This value is the same as that associated with the generation and subsequent migration of vacancies in silicon ...
T. E. Seidel, A. U. Mac Rae
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Isothermal annealing study of the EH1 and EH3 levels in n-type 4H-SiC
Journal of Physics: Condensed Matter, 2020Particle irradiation is known to give rise to several majority carrier traps in the band gap of n-type 4H-SiC, in the 0.4–1.6 eV energy range below the conduction band edge (EC).
G. Alfieri, A. Mihaila
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The isothermic annealing of bainite
Canadian Metallurgical Quarterly, 1975AbstractBainitic high carbon steel has been isothermally annealed in the temperature range, 823–973K, in order to follow changes in structure and mechanical properties. The kinetic data for carbide coarsening were found to be in substantial agreement with the Ostwald ripening theory at the higher annealing temperatures. The observed divergence from the
G. Deep, W.M. Williams
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Isothermal annealing of arsenic-implanted silicon
Journal of Physics C: Solid State Physics, 1974Isothermal annealing studies of arsenic-implanted silicon have been made at temperatures above 550 degrees C for a dose below the amorphization limit. The process appears to follow first-order reaction kinetics with an activation energy of about 1 eV in the temperature range 550-850 degrees C.
F Cappellani, G Restelli, L Spinoni
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Isothermal Annealing of Boron Implanted Silicon
Physica Scripta, 1974The sheet resistivity has been measured in isothermal annealing studies of 10 kohm cm silicon implanted with 40 keV boron ions. The doses used were 2 x 1012 and 2 x 1014 ions/cm2. The annealing was performed in the temperature range 300 to 800°C and the maximum annealing time used was 4 hours at each temperature.
null S Peterström, null G Holmén
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The rapid isothermal annealing of tantalum silicide
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985Abstract Silicon-poor tantalum silicide films cosputtered on polycrystalline silicon over thermal oxide on silicon were rapidly annealed for various temperatures and times using a graphite strip heater. Rutherford backscattering and X-ray diffraction showed rapid formation of a stoichiometric tantalum disilicide via Si diffusion from the ...
K. Daneshvar, R.E. Jones
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Rapid isothermal anneal of 75As implanted silicon
Applied Physics Letters, 1982Silicon wafers implanted with 75As have been annealed with a Varian IA-200 isothermal annealer. The anneal occurs in vacuum using radiation from a resistively heated sheet of graphite. The anneal quality depends on the graphite heater temperature and exposure time.
S. R. Wilson +4 more
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Polysilicon Grain Growth by Rapid Isothermal Annealing
MRS Proceedings, 1984ABSTRACTone method of reducing the area occupied by a RAM cell is to stack the p- and n-channel devices on top of one another. This “stacked CMOS” structure is a first step towards three dimensional integration. The simplest approach is to use polysilicon as the substrate for the top transistors. This paper describes the results of grain growth studies
R. F. Pinizzotto +3 more
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