Results 21 to 30 of about 118 (102)

Spiral Crystal Growth in the Czochralski Process—Revisited, with New Interpretations

Crystal Research and Technology, Volume 55, Issue 2, February 2020., 2020
This review deals first with the spontaneous transition of cylindrically growing Czochralski crystals to the growth in spiral morphology. Further, the growth of a full spiral is described considering the azimuthal growth in the off‐centered rotating melt meniscus.
Dietrich G. Schwabe
wiley   +1 more source

Automated Growth of Si1−xGex Single Crystals with Constant Axial Gradient by Czochralski Technique

Crystal Research and Technology, Volume 55, Issue 2, February 2020., 2020
This contribution proposes a method for the automated growth of silicon–germanium (SiGe) crystals. To be used as X‐ray and γ‐ray monochromators such crystals must have a constant germanium concentration gradient in their body. This can be achieved by growing them in a special shape.
Nikolay V. Abrosimov, Vladimir N. Kurlov, Robert Schewski, Jan Winkler   +3 more
wiley   +1 more source

Fast and Slow Stages of Lifetime Degradation by Boron–Oxygen Centers in Crystalline Silicon

physica status solidi (b), Volume 257, Issue 1, January 2020., 2020
Apparently contradicting experiments on the light‐induced degradation (LID) in boron‐doped oxygen‐containing crystalline silicon are resolved by introduction of a concept of different kinds of activating impurities participating in boron–oxygen recombination centers.
Jan Schmidt, Karsten Bothe, Vladimir V. Voronkov, Robert Falster   +3 more
wiley   +1 more source

Temperature Measurement Using Optical Fiber Methods: Overview and Evaluation

Journal of Sensors, Volume 2020, Issue 1, 2020., 2020
The paper deals with the overview of fiber optic methods suitable for temperature measurement and monitoring. The aim is to evaluate the current research of temperature measurements in the interval from temperature close to 0 up to 1000°C. Since the measuring chain is a functional combination of optical methods, optical fiber properties, and other ...
Martin Mikolajek, Radek Martinek, Jiri Koziorek, Stanislav Hejduk, Jan Vitasek, Ales Vanderka, Radek Poboril, Vladimir Vasinek, Radim Hercik, Qiang Wu   +9 more
wiley   +1 more source

Occupation as Social Practice and Ambiguous Space: The Lives of Ludwik Hirszfeld and Jan Czochralski in Warsaw, 1939–44

Acta Poloniae Historica, 2022
This article evaluates the situation of two renowned scientists in Poland, namely the microbiologist and serologist Ludwik Hirszfeld (1884–1954), and the metallurgist Jan Czochralski (1885–1953), during the time of the German occupation from 1939–45. Both scientists strove to continue their scientific work even under the conditions of occupation but ...
openaire   +1 more source

An induction heating system for in situ X‐ray diffraction imaging: design, simulation and application to dislocation dynamics in semiconductors

Journal of Synchrotron Radiation, EarlyView.
This work presents a compact induction heating system for time‐resolved in situ X‐ray diffraction imaging. The system enables contact‐free volumetric heating up to approximately 1600°C and provides flexible operation in different operating modes. Its performance is demonstrated through representative diffraction imaging experiments.We present a compact
Merve P. Kabukcuoglu, Nikolaos Sagias, Elias Hamann, Carsten Richter, Marcus Zuber, Kaspars Dadzis, Daniel Hänschke   +6 more
wiley   +1 more source

Jan Czochralski – pionier światowej elektroniki i inżynierii materiałowej

Dzieje Najnowsze, 2020
Artykuł ma na celu przedstawienie sylwetki Jana Czochralskiego, światowej sławy naukowca XX w. Jego głównym osiągnięciem było wynalezienie metody uzyskiwania monokryształów, do dziś stosowanej w produkcji układów scalonych wielkiej skali integracji. Po zakończeniu II wojny światowej Czochralski całkowicie bezpostawnie został oskarżony o kolaborację z ...
openaire   +2 more sources

Structure and properties of (Nd,Sr)(Al,Ta)O3 (NSAT) substrate crystals

Acta Crystallographica Section B, Volume 82, Issue 2, Page 131-142, April 2026.
An emerging cubic substrate material (Nd,Sr)(Al,Ta)O3 (NSAT) has been structurally and spectroscopically characterized revealing that the nominally cubic NSAT consists of partially developed cubic superstructure domains with doubled unit‐cell parameter.
Roberts Blukis, Christian Rhode, Thilo Remmele, Elias Kluth, Rüdiger Goldhahn, Martin Feneberg, Ambra Celotto, Giorgio Divitini, Mario Brützam, Darrell G Schlom, Christo Guguschev   +10 more
wiley   +1 more source

TOPCon Solar Cells Made of n‐Type and p‐Type Epitaxially Grown Silicon Wafers

Solar RRL, Volume 9, Issue 16, August 2025.
This study investigates the suitability of epitaxially grown silicon wafers for tunnel oxide passivating contact (TOPCon) solar cells in particular the high temperature stability required for boron emitter diffusion. Efficiencies up to 24.4% and 24.7% for n‐type and p‐type wafers were achieved, respectively, which demonstrate the suitability of ...
Armin Richter, Marion Drießen, Clara Rittmann, Giuliano Vescovi, Maxi Richter, Florian Schindler, Jan Benick, Charlotte Weiss, Stefan Janz   +8 more
wiley   +1 more source

Microstructural Analysis of Local Silicon Corrosion of Bifacial Solar Cells as Root Cause of Potential‐Induced Degradation at the Rear Side

physica status solidi (a), Volume 216, Issue 17, September 2019., 2019
Bifacial passivated emitter and rear cells (PERC+) can suffer from a potential‐induced degradation (PID) at the rear side. A microstructural analysis shows localized spots with increased carrier recombination as the origin of the power losses. A corrosion of the silicon bulk at the silicon/aluminium oxide interface is the root cause of the degradation.
Kai Sporleder, Volker Naumann, Jan Bauer, Susanne Richter, Angelika Hähnel, Stephan Großer, Marko Turek, Christian Hagendorf   +7 more
wiley   +1 more source