Results 31 to 40 of about 2,395 (142)

Tests of Sapphire Crystals Produced with Different Growth Processes for Ultra-stable Microwave Oscillators

, 2015
We present the characterization of 8-12 GHz whispering gallery mode resonators machined in high-quality sapphire crystals elaborated with different growth techniques.
Dubois, Benoit, Fluhr, Christophe, Giordano, Vincent, Grop, Serge   +3 more
core   +3 more sources

TOPCon Solar Cells Made of n‐Type and p‐Type Epitaxially Grown Silicon Wafers

Solar RRL, Volume 9, Issue 16, August 2025.
This study investigates the suitability of epitaxially grown silicon wafers for tunnel oxide passivating contact (TOPCon) solar cells in particular the high temperature stability required for boron emitter diffusion. Efficiencies up to 24.4% and 24.7% for n‐type and p‐type wafers were achieved, respectively, which demonstrate the suitability of ...
Armin Richter, Marion Drießen, Clara Rittmann, Giuliano Vescovi, Maxi Richter, Florian Schindler, Jan Benick, Charlotte Weiss, Stefan Janz   +8 more
wiley   +1 more source

Microstructural Analysis of Local Silicon Corrosion of Bifacial Solar Cells as Root Cause of Potential‐Induced Degradation at the Rear Side

physica status solidi (a), Volume 216, Issue 17, September 2019., 2019
Bifacial passivated emitter and rear cells (PERC+) can suffer from a potential‐induced degradation (PID) at the rear side. A microstructural analysis shows localized spots with increased carrier recombination as the origin of the power losses. A corrosion of the silicon bulk at the silicon/aluminium oxide interface is the root cause of the degradation.
Kai Sporleder, Volker Naumann, Jan Bauer, Susanne Richter, Angelika Hähnel, Stephan Großer, Marko Turek, Christian Hagendorf   +7 more
wiley   +1 more source

Seventy Years of Getting Transistorized [PDF]

, 2017
Vacuum tubes appeared at the break of the twentieth century giving birth to electronics. By the 1930s, they had become established as a mature technology, spreading into areas such as radio communications, long distance radiotelegraphy, radio ...
Guarnieri, Massimo
core   +1 more source

Solid‐Solution Limits and Thorough Characterization of Bulk β‐(AlxGa1‐x)2O Single Crystals Grown by the Czochralski Method (Adv. Mater. Interfaces 2/2025)

Advanced Materials Interfaces, Volume 12, Issue 2, January 20, 2025.
Czochralski Method High‐angle annular dark‐field scanning transmission electron microscopy image of a β‐(Al0.2Ga0.8)2O3 crystal along the [010] projection grown by the Czochralski method. More details can be found in article 2400122 by Zbigniew Galazka and co‐workers.
Zbigniew Galazka, Andreas Fiedler, Andreas Popp, Palvan Seyidov, Saud Bin Anooz, Roberts Blukis, Jana Rehm, Kornelius Tetzner, Mike Pietsch, Andrea Dittmar, Steffen Ganschow, Arub Akhtar, Thilo Remmele, Martin Albrecht, Tobias Schulz, Ta‐Shun Chou, Albert Kwasniewski, Manuela Suendermann, Thomas Schroeder, Matthias Bickermann   +19 more
wiley   +1 more source

Recent Advanced Ultra‐Wide Bandgap β‐Ga2O3 Material and Device Technologies

Advanced Electronic Materials, Volume 11, Issue 1, January 2025.
The advanced ultra‐wide bandgap semiconductor material β‐Ga2O3 is highly favored for its exceptional material properties. This sudy provides a comprehensive review of its developments in areas such as materials, power devices, and RF devices. The current status of its commercialization process is outlined, along with an analysis of the challenges it is
Sihan Sun, Chenlu Wang, Sami Alghamdi, Hong Zhou, Yue Hao, Jincheng Zhang   +5 more
wiley   +1 more source

Effect of Dopant Compensation on the Behavior of Dissolved Iron and Iron‐Boron Related Complexes in Silicon

International Journal of Photoenergy, Volume 2015, Issue 1, 2015., 2015
The behavior of iron, iron‐boron (FeB) pairs, and iron‐boron‐phosphorus (FeB‐P) complexes has been studied in B‐doped Czochralski silicon with phosphorus (P) compensation and compared with that in uncompensated material. The interstitial iron concentration has been measured at temperatures from 50 to 270°C.
Xiaodong Zhu, Xuegong Yu, Peng Chen, Yong Liu, Jan Vanhellemont, Deren Yang, Yanfa Yan   +6 more
wiley   +1 more source

Determination of Gallium Concentration in Silicon from Low‐Temperature Photoluminescence Analysis

Solar RRL, Volume 8, Issue 4, February 2024.
A simple method for determining the gallium concentration in silicon for solar photovoltaic applications is presented. It relies on the intensity ratio for bound exciton to the free exciton peaks from photoluminescence measurements at 10 K. The empirical relation describing the calibration curve is deduced, and the effect of temperature and power on ...
Tarek O. Abdul Fattah, Janet Jacobs, Vladimir P. Markevich, Nikolay V. Abrosimov, Ian D. Hawkins, Matthew P. Halsall, Iain F. Crowe, Anthony R. Peaker   +7 more
wiley   +1 more source

Advances in Contactless Silicon Defect and Impurity Diagnostics Based on Lifetime Spectroscopy and Infrared Imaging

Advances in OptoElectronics, Volume 2007, Issue 1, 2007., 2007
This paper gives a review of some recent developments in the field of contactless silicon wafer characterization techniques based on lifetime spectroscopy and infrared imaging. In the first part of the contribution, we outline the status of different lifetime spectroscopy approaches suitable for the identification of impurities in silicon and discuss ...
Jan Schmidt, Peter Pohl, Karsten Bothe, Rolf Brendel, Armin G. Aberle   +4 more
wiley   +1 more source

Temperature-dependent thermal conductivity and diffusivity of a Mg-doped insulating $\beta$-$\mathrm{Ga_2O_3}$ single crystal along [100], [010] and [001]

, 2016
The monoclinic crystal structure of $\beta$-$\mathrm{Ga_2O_3}$ leads to significant anisotropy of the thermal properties. The 2$\omega$-method is used to measure the thermal diffusivity $D$ in [010] and [001] direction respectively and to determine the ...
Fischer, Saskia F., Galazka, Zbigniew, Handwerg, Martin, Mitdank, Rüdiger   +3 more
core   +1 more source