Results 31 to 40 of about 121 (100)

Structure and properties of (Nd,Sr)(Al,Ta)O3 (NSAT) substrate crystals

Acta Crystallographica Section B, Volume 82, Issue 2, Page 131-142, April 2026.
An emerging cubic substrate material (Nd,Sr)(Al,Ta)O3 (NSAT) has been structurally and spectroscopically characterized revealing that the nominally cubic NSAT consists of partially developed cubic superstructure domains with doubled unit‐cell parameter.
Roberts Blukis, Christian Rhode, Thilo Remmele, Elias Kluth, Rüdiger Goldhahn, Martin Feneberg, Ambra Celotto, Giorgio Divitini, Mario Brützam, Darrell G Schlom, Christo Guguschev   +10 more
wiley   +1 more source

TOPCon Solar Cells Made of n‐Type and p‐Type Epitaxially Grown Silicon Wafers

Solar RRL, Volume 9, Issue 16, August 2025.
This study investigates the suitability of epitaxially grown silicon wafers for tunnel oxide passivating contact (TOPCon) solar cells in particular the high temperature stability required for boron emitter diffusion. Efficiencies up to 24.4% and 24.7% for n‐type and p‐type wafers were achieved, respectively, which demonstrate the suitability of ...
Armin Richter, Marion Drießen, Clara Rittmann, Giuliano Vescovi, Maxi Richter, Florian Schindler, Jan Benick, Charlotte Weiss, Stefan Janz   +8 more
wiley   +1 more source

Microstructural Analysis of Local Silicon Corrosion of Bifacial Solar Cells as Root Cause of Potential‐Induced Degradation at the Rear Side

physica status solidi (a), Volume 216, Issue 17, September 2019., 2019
Bifacial passivated emitter and rear cells (PERC+) can suffer from a potential‐induced degradation (PID) at the rear side. A microstructural analysis shows localized spots with increased carrier recombination as the origin of the power losses. A corrosion of the silicon bulk at the silicon/aluminium oxide interface is the root cause of the degradation.
Kai Sporleder, Volker Naumann, Jan Bauer, Susanne Richter, Angelika Hähnel, Stephan Großer, Marko Turek, Christian Hagendorf   +7 more
wiley   +1 more source

Solid‐Solution Limits and Thorough Characterization of Bulk β‐(AlxGa1‐x)2O Single Crystals Grown by the Czochralski Method (Adv. Mater. Interfaces 2/2025)

Advanced Materials Interfaces, Volume 12, Issue 2, January 20, 2025.
Czochralski Method High‐angle annular dark‐field scanning transmission electron microscopy image of a β‐(Al0.2Ga0.8)2O3 crystal along the [010] projection grown by the Czochralski method. More details can be found in article 2400122 by Zbigniew Galazka and co‐workers.
Zbigniew Galazka, Andreas Fiedler, Andreas Popp, Palvan Seyidov, Saud Bin Anooz, Roberts Blukis, Jana Rehm, Kornelius Tetzner, Mike Pietsch, Andrea Dittmar, Steffen Ganschow, Arub Akhtar, Thilo Remmele, Martin Albrecht, Tobias Schulz, Ta‐Shun Chou, Albert Kwasniewski, Manuela Suendermann, Thomas Schroeder, Matthias Bickermann   +19 more
wiley   +1 more source

Recent Advanced Ultra‐Wide Bandgap β‐Ga2O3 Material and Device Technologies

Advanced Electronic Materials, Volume 11, Issue 1, January 2025.
The advanced ultra‐wide bandgap semiconductor material β‐Ga2O3 is highly favored for its exceptional material properties. This sudy provides a comprehensive review of its developments in areas such as materials, power devices, and RF devices. The current status of its commercialization process is outlined, along with an analysis of the challenges it is
Sihan Sun, Chenlu Wang, Sami Alghamdi, Hong Zhou, Yue Hao, Jincheng Zhang   +5 more
wiley   +1 more source

Central European Group for Separation Sciences (CEGSS)—Brief History and Memoirs on the Creation and Activity

Separations
The origin of the International Symposia on Separation Sciences (ISSS) can be found in the national gas chromatography scientific meetings held in Zagreb, Croatia, from 1967 and later at Plitvice Lakes until 1988 [...]
Bogusław Buszewski, Dušan Berek, Virginia Coman   +2 more
doaj   +1 more source

Determination of Gallium Concentration in Silicon from Low‐Temperature Photoluminescence Analysis

Solar RRL, Volume 8, Issue 4, February 2024.
A simple method for determining the gallium concentration in silicon for solar photovoltaic applications is presented. It relies on the intensity ratio for bound exciton to the free exciton peaks from photoluminescence measurements at 10 K. The empirical relation describing the calibration curve is deduced, and the effect of temperature and power on ...
Tarek O. Abdul Fattah, Janet Jacobs, Vladimir P. Markevich, Nikolay V. Abrosimov, Ian D. Hawkins, Matthew P. Halsall, Iain F. Crowe, Anthony R. Peaker   +7 more
wiley   +1 more source

Komentarz do artykułu Mariusza W. Majewskiego opublikowanego w Studia Historiae Scientiarum 17 (2018), ss. 89–117

Studia Historiae Scientiarum, 2019
Przedstawiono kilka uzupełniających uwag do tekstu Mariusza W. Majewskiego o Instytucie Metalurgii i Metaloznawstwa Politechniki Warszawskiej oraz o roli prof.
Paweł E. Tomaszewski
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Uwagi do komentarza prof. Michała Kokowskiego o badaniach życiorysu Jana Czochralskiego

Studia Historiae Scientiarum, 2016
Prezentowane uwagi są kolejnym (trzecim) etapem polemiki na temat faktów z życia Jana Czochralskiego i różnic w sposobie ich przedstawiania przez amatora i profesjonalnego historyka. Źródłem kontrowersji jest obszerna biografia pt. Powrót.
Paweł E. Tomaszewski
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Odpowiedź na pracę dr. Pawła E. Tomaszewskiego pt. „Komentarz do artykułu Mariusza W. Majewskiego opublikowanego w Studia Historiae Scientiarum 17 (2018), ss. 89–117”

Studia Historiae Scientiarum, 2019
Niniejszy artykuł jest odpowiedzą na polemiczny komentarz dr. Pawła E. Tomaszewskiego, opublikowany w bieżącym tomie czasopisma Studia Historiae Scientiarum 18 (2019), dotyczący wcześniejszego artykułu autora (M.W. Majewskiego) na temat prac Instytutu
Mariusz W. Majewski
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