Results 21 to 30 of about 616,094 (331)

Enhanced Cooling of LED Filament Bulbs Using an Embedded Tri-Needle/Ring Ionic Wind Device

Energies, 2020
Improving the heat dissipation ability for light-emitting diode (LED) filament bulb is very difficult. A tri-needle/ring ionic wind generator was developed to improve the heat dissipation condition of bulbs.
Chunlin Xu, Huai Zheng, Jie Liu, Jingcao Chu, Xiaoliang Zeng, Rong Sun, Sheng Liu   +6 more
doaj   +1 more source

A Hybrid Model of Turn-Off Loss and Turn-Off Time for Junction Temperature Extraction

IEEE Journal of the Electron Devices Society, 2022
Temperature-sensitive electrical parameter (TSEP) approaches are widely employed in the junction temperature (Tj) extraction and prediction of power semiconductor devices.
Lingfeng Shao, Guoqing Xu, Pengbo Li
doaj   +1 more source

Junction Temperature Measurement in Optically-Controlled Power Mosfet

Proceedings of the 9th International Conference on Photonics, Optics and Laser Technology, 2021
The temperature-dependent optical properties of silicon carbide (SiC), such as refractive index and reflectivity, have been used for a direct monitoring of the junction temperature of a power MOSFET. In particular, the optical response of a 4H-SiC MOSFET-integrated Fabry-Perot cavity to temperature changes has been investigated through parametric ...
Rao S., Mallemace E. D., Cocorullo G., Dehimi L., Della Corte F. G.   +4 more
openaire   +3 more sources

Half-Integer Shapiro Steps in a Short Ballistic InAs Nanowire Josephson Junction

, 2020
We report on half-integer Shapiro steps observed in an InAs nanowire Josephson junction. We observed the Shapiro steps of the short ballistic InAs nanowire Josephson junction and found anomalous half-integer steps in addition to the conventional integer ...
Kamata, Hiroshi,, Li, Kan,, Lund University., Lund University., Matsuo, Sadashige,, Samuelson, Lars,, Sato, Yosuke,, Takeshige, Yuusuke,, Tarucha, Seigo,, Ueda, Kento,, Xu, Hongqi,   +10 more
core   +1 more source

Temperature dependent third cumulant of tunneling noise [PDF]

, 2003
Poisson statistics predicts that the shot noise in a tunnel junction has a temperature independent third cumulant e^2\I, determined solely by the mean current I. Experimental data, however, show a puzzling temperature dependence.
Beenakker, C. W. J., Kindermann, M., Nazarov, Yu. V.   +2 more
core   +4 more sources

Temperature-Dependent Coherent Tunneling across Graphene–Ferritin Biomolecular Junctions

ACS Applied Materials & Interfaces, 2022
Understanding the mechanisms of charge transport (CT) across biomolecules in solid-state devices is imperative to realize biomolecular electronic devices in a predictive manner. Although it is well-accepted that biomolecule-electrode interactions play an essential role, it is often overlooked.
Nipun Kumar Gupta, Senthil Kumar Karuppannan, Rupali Reddy Pasula, Ayelet Vilan, Jens Martin, Wentao Xu, Esther Maria May, Andrew R. Pike, Hippolyte P. A. G. Astier, Teddy Salim, Sierin Lim, Christian A. Nijhuis   +11 more
openaire   +4 more sources

Resistance of Josephson-junction arrays at low temperatures [PDF]

Physical Review B, 1998
24 pages, LaTeX references added, to appear in ...
Ioffe, L. B., Narozhny, B. N.
openaire   +2 more sources

Thermoelectricity in atom-sized junctions at room temperatures [PDF]

Scientific Reports, 2013
Atomic and molecular junctions are an emerging class of thermoelectric materials that exploit quantum confinement effects to obtain an enhanced figure of merit. An important feature in such nanoscale systems is that the electron and heat transport become highly sensitive to the atomic configurations.
Makusu Tsutsui, Takanori Morikawa, Akihide Arima, Masateru Taniguchi   +3 more
openaire   +2 more sources

Anomalous temperature dependence of the supercurrent through a chaotic Josephson junction [PDF]

, 1996
We calculate the supercurrent through a Josephson junction consisting of a phase-coherent metal particle (quantum dot), weakly coupled to two superconductors.
Altshuler, Altshuler, Altshuler, Altshuler, Andreev, Andreev, Andreev, Aslamasov, Aslamasov, Baranger, Beenakker, Beenakker, Beenakker, Beenakker, Brouwer, Brouwer, Brézin, C.W.J. Beenakker, Courtois, Courtois, Courtois, Doron, Efetov, Frahm, Iida, Iida, Jalabert, Kulik, Kulik, Likharev, Mahaux, Marsh, Mehta, Melsen, Melsen, Mur, P.W. Brouwer, Pandey, Pastur, Pastur, Smith, Svidzinskii, Svidzinskii, Takayanagi, Verbaarschot, Volkov, Volkov, Wigner, Wilhelm   +48 more
core   +5 more sources

Low-temperature grown GaAs tunnel junctions

Electronics Letters, 1997
A GaAs tunnel junction is formed by molecular beam epitaxy at low substrate temperatures to incorporate excess arsenic, followed by an anneal to precipitate the excess arsenic. This tunnel junction is comparable in resistance and peak current density to tunnel junctions grown stoichiometrically.
S. Ahmed, M.R. Melloch, D.T. McInturff, J.M. Woodall, E.S. Harmon   +4 more
openaire   +1 more source