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A Fast Forward Electromagnetic Solver for Microwave Imaging [PDF]
, 2015 Chaber, Bartosz, Mohr, Johan Jacob
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Large-scale Roll-to-Roll Fabrication of Organic Solar Cells for Energy Production [PDF]
, 2013 Hösel, Markus
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Laminated Busbar Design for High-Speed Switching of Power Conversion Circuits
Laminated Busbar Design for High-Speed Switching of Power Conversion Circuitsopenaire
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Investigation, Evaluation, and Optimization of Stray Inductance in Laminated Busbar
IEEE Transactions on Power Electronics, 2014Wiring inductance has a critical effect on electrical, thermal, and electromagnetic compatibility (EMC) performances in inverters. Therefore, the low stray inductance laminated busbar, as a state-of-the-art pathway interface, is widely used in high-power inverters.
Cai Chen, Xuejun Pei, Yong Kang
exaly +2 more sources
Thermal Analysis of the Laminated Busbar System of a Multilevel Converter
IEEE Transactions on Power Electronics, 2016Laminated busbar systems are commonly used in power electronic converters because of their low stray inductance. While the electromagnetic analysis of a busbar system is widely presented in the literature, there is a lack of accurate thermal modeling. In this paper, the thermal analysis of the busbar system is presented.
Liudmila Smirnova +2 more
exaly +2 more sources
IEEE Transactions on Circuits and Systems I: Regular Papers, 2021
Silicon Carbide (SiC) MOSFETs are usually paralleled to increase the current capability for high power applications. While, the asymmetrical parasitic parameters of the wide-used laminated busbar can cause current imbalance for paralleled MOSFETs. The fast switching of SiC devices can further deteriorate the imbalance.
Jianing Wang, Shaolin Yu, Xing Zhang
exaly +2 more sources
Silicon Carbide (SiC) MOSFETs are usually paralleled to increase the current capability for high power applications. While, the asymmetrical parasitic parameters of the wide-used laminated busbar can cause current imbalance for paralleled MOSFETs. The fast switching of SiC devices can further deteriorate the imbalance.
Jianing Wang, Shaolin Yu, Xing Zhang
exaly +2 more sources
Optimization of Laminated Busbar for Three-Level NPC Topology Using SiC Module
2020 IEEE 9th International Power Electronics and Motion Control Conference (IPEMC2020-ECCE Asia), 2020In high power applications, laminated busbar has been used as main connection to reduce the loop stray inductance. Nowadays, the introduction of SiC device brings more strict requirements on busbar design because of its higher switching speed. This paper presents an optimization of busbar for three-level NPC topology using 62mm package SiC module by ...
Hongkeng Zhu +2 more
exaly +2 more sources
2020 IEEE International Conference on High Voltage Engineering and Application (ICHVE), 2020
The effect of DC electrothermal aging on breakdown strength $(\pmb{E}_{\mathbf{b}})$ of polyethylene terephthalate (PET) used in laminated busbar is studied. It is found that a maximum $\pmb{E}_{\mathbf{b}}$ of 837 kV/mm was found for 96 hours' aged sample. The dependence of activation energy of dc conductivity on aging time is investigated.
Men Guo, Chuang Zhang, Jiao Xiang
exaly +2 more sources
The effect of DC electrothermal aging on breakdown strength $(\pmb{E}_{\mathbf{b}})$ of polyethylene terephthalate (PET) used in laminated busbar is studied. It is found that a maximum $\pmb{E}_{\mathbf{b}}$ of 837 kV/mm was found for 96 hours' aged sample. The dependence of activation energy of dc conductivity on aging time is investigated.
Men Guo, Chuang Zhang, Jiao Xiang
exaly +2 more sources
Modeling and optimization of high power inverter three-layer laminated busbar
2012 IEEE Energy Conversion Congress and Exposition (ECCE), 2012This paper focuses on the modeling and optimization of the laminated busbar used in high power inverters. First, through the circuit structure analysis, the commutation loops of the laminated busbar are analyzed in a single-phase H-bridge inverter; then, the commutation loops are modeled and simulated via the three-dimensional (3-D) finite element ...
Cai Chen, Xuejun Pei, Yunhao Shi
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2015 IEEE Applied Power Electronics Conference and Exposition (APEC), 2015
Multilevel technology and power semiconductor devices in series connection can both effectively improve the converter system power capacity. But both of them will enlarge the system size and lead to complex busbar structure which may cause large stray parameters, especially the stray inductances.
Zhengming Zhao +2 more
exaly +2 more sources
Multilevel technology and power semiconductor devices in series connection can both effectively improve the converter system power capacity. But both of them will enlarge the system size and lead to complex busbar structure which may cause large stray parameters, especially the stray inductances.
Zhengming Zhao +2 more
exaly +2 more sources