Results 211 to 220 of about 123,509 (254)
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Excimer-laser patterning of copper in LDE (laser dry etching)
Applied Surface Science, 1997Patterning of Cu bulk material and Cu foils (1 μm in thickness) with etch rates up to 20 A/pulse is performed in an LDE (laser dry etching) process with excimer laser radiation (λ=248 nm) and CCl4 as processing gas. To determine the type and the kinetic temperature of ablated molecules and the LDE incubation periods, in-situ optical-emission ...
W. Pfleging +4 more
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Dry laser cleaning of mechanically thin films
Applied Surface Science, 2004Laser-assisted particle removal has acquired a growing importance in last few years, finding applications in several fields ranging from microelectronics to conservation and restoration of materials having cultural or historical interest. Recently new 'indirect' laser cleaning techniques such as 'shock' and 'verso' laser cleaning have been developed ...
BLOISI, FRANCESCO +2 more
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Laser-based drying of battery electrode layers
ICALEO 2016: 35th International Congress on Applications of Lasers & Electro-Optics, 2016In order to introduce competitive mass market solutions for the production in electro mobility, costs for battery cell manufacturing have to be significantly reduced. The substitution of conventional furnace processes through innovative laser processes presents a significant energy saving potential as well as a considerable reduction of the ...
Christian Vedder +5 more
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Dry Etched Waveguide Laser Diode on GeOI
IEEE Journal of Selected Topics in Quantum Electronics, 2015We demonstrate a top–top contact, dry etched mirror facet III–V waveguide laser diode grown on germanium-on-insulator (GeOI). A 3 x InGaAs/GaAs quantum well designed to lase at 985 nm was grown on a GaAs buffer, which was lattice matched to the GeOI platform in order to realize the monolithic integration of III–V electronic and photonic devices with ...
Shuh-Ying Lee +6 more
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Theoretical description of dry laser cleaning
Applied Surface Science, 2003Abstract Dry laser cleaning (DLC) is considered as an escape from an adhesion potential under the forces induced by thermal expansion. Important temporal and spatial scales are: period of small oscillations τ0, and equilibrium deformation h0. Possible cleaning regimes are discussed.
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Three-dimensional effects in dry laser cleaning
Applied Physics A, 2003Dry laser cleaning has usually been analyzed within the framework of a one-dimensional (1D) model with homogeneous surface heating. This model gives a qualitative description of the process and is sufficient for understanding the main mechanisms. More detailed studies show that the 1D model disagrees with experiments by one to two orders of magnitude ...
Luk'Yanchuk, B. S. +4 more
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Laser-assisted dry etching ablation of InP
Applied Surface Science, 1995Abstract An XeCl excimer laser has been used to ablate InP in a Cl 2 /He environment. The chlorination of the surface of InP has been carried out at pressures of the reactive gas, p , between 15 and 40 mTorr. The saturation of the surface of the etched material with the product of reaction takes place at p > 18 mTorr, and for the laser pulse ...
Dubowski, J. J., Compaan, A., Prasad, M.
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Laser-induced backside dry etching: wavelength dependence
Journal of Physics D: Applied Physics, 2008The laser-induced backside dry etching (LIBDE) method has been developed by analogy with the well-known LIBWE technique for micromachining of transparent materials. In our experiments tin thin films were applied as absorbing layers and the dependence of the etch depth on the applied laser wavelength was investigated.
B Hopp +5 more
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Dry ridge etching of AlGaAs GRINSCH lasers
Microelectronic Engineering, 1990Abstract Optical confinement properties of AlGaAs GRINSCH ridge lasers are sensitive to the width and the depth of the ridge. Optimum waveguide confinement requires excellent control during the ridge etch. This paper describes a Cl 2 reactive ion etching process and its associated endpoint technique which achieves such process control.
M. Jost +5 more
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Microwave-assisted laser dry etching of silicon
SPIE Proceedings, 1995A combination of microwave excitation and a mask projection scheme is applied for laterally structured etching of silicon. The technology is based on polymerization of an inert overlayer, which protects the silicon surface from the etching gas. After ablating the polymer from the silicon surface with pulsed Excimer laser radiation the surface is ...
Wilhelm Pfleging +3 more
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