Results 121 to 130 of about 12,506 (261)

Large-area metal-integrated grating electrode achieving near 100% infrared transmission. [PDF]

Light Sci Appl
Bogdanowicz K, Głowadzka W, Smołka T, Rygała M, Kałuża M, Ekielski M, Sadowski O, Zadura M, Marciniak M, Gębski M, Wasiak M, Motyka M, Szerling A, Czyszanowski T.   +13 more
europepmc   +1 more source

Origin of Dark Current Robustness in Photomultiplication Organic Photodetectors Enabled by Ionic Conjugated Electron‐Blocking Layers

Advanced Materials, EarlyView.
Ionic conjugated polyelectrolyte electron‐blocking layers enable photomultiplication organic photodetectors with dark current robustness up to −10 V and external quantum efficiencies exceeding 3000%. Fowler–Nordheim tunneling, interfacial dipole, trap density of states, and noise analyses reveal how ionic conjugated polyelectrolytes suppress electron ...
Yelim Kang, Min Hun Jee, Shuai Zhang, Sang Heon Lee, Jung Min Ha, Xingchao Zhao, Xiaoling Ma, Huiseong Shin, Changhwan Shin, Soonyong Lee, Fujun Zhang, Jae Won Shim, Han Young Woo   +12 more
wiley   +1 more source

Effectiveness of GV20-based wearable low-level laser acupoint therapy for pain on head. [PDF]

Lasers Med Sci
Lei WF, Sadiq A, Cui ZY, Wu XB, Lee SD.
europepmc   +1 more source

Barrier‐Assisted Plasma Doping for Spatially Selective Resistance Engineering in MoS2 Transistors

Advanced Materials, EarlyView.
Barrier‐assisted NH3 plasma doping enables damage‐free, spatially selective carrier modulation in monolayer MoS2 transistors. An ultrathin pV3D3/Al2O3 protective‐dielectric stack acts as a chemical filter that allows NHx radicals to reach the MoS2 surface while blocking plasma damage. This process achieves a high electron concentration of 4.3 × 1013 cm−
Inseong Lee, Joonho Park, Seungsun Yoo, Seunghyun Yu, Mingu Kang, Seohak Park, Min Kyu Lee, Hyeongjin Lim, Dongyoung Kim, Kunwoo Roh, Sejin Kim, Kihyuk Kim, Wonbae Ahn, Kibum Kang, Yong‐Hoon Kim, Sung‐Yool Choi   +15 more
wiley   +1 more source

Wafer-scale manufacturing of ultra-broadband, high-power erbium-doped integrated lasers. [PDF]

Nat Commun
Ji X, Yang X, Liu Y, Qiu Z, Lihachev G, Bianconi S, Sun J, Voloshin A, Kim T, Olson JC, Kippenberg TJ.   +10 more
europepmc   +1 more source

Direct Growth of 2D Bilayers on Au(111) for Low‐Coercive Sliding Ferroelectricity

Advanced Materials, EarlyView.
Controlled CVD growth of stacking‐defined bilayer ReS2 on Au(111) enables parallel‐stacked bilayers with intrinsic sliding ferroelectricity, a strong piezoelectric response, and an ultralow coercive voltage. Atomic‐resolution imaging and in situ measurements further reveal the decisive role of clean interfaces in achieving low‐barrier ferroelectric ...
Honglin Chen, Ke Yang, Yuhuan Li, Lingli Huang, Tianren Chen, Ming Yang, Jiong Zhao, Thuc Hue Ly   +7 more
wiley   +1 more source

Ultra-broadband single-stack mid-infrared semiconductor lasers grown by MOCVD. [PDF]

Light Sci Appl
Liu P, Zhang L, Wu Y, Lu H, Tian S, Meng B, Wang QJ, Tong C, Wang L.   +8 more
europepmc   +1 more source

A Universal van der Waals Tunneling Injector for Monolayer CMOS

Advanced Materials, EarlyView.
A universal van der Waals injector unlocks polarity‐flexible tunneling contacts for monolayer CMOS. SnSe2, an intrinsically degenerate 2D semiconductor, establishes polarity‐specific band alignments with both WSe2 and MoS2 channels, enabling steep switching, high on/off ratios, and a unified route to low‐power 2D logic.
Hanbin Cho, Jing Huang, Seonguk Yang, Subin Im, Sangwoo Park, Jeongin Yeo, Sungyeon Kim, Gilhwan Do, Wenxuan Zhu, Soobeom Shin, Jongwon Lee, Yongjoon Shin, Do‐Sun Lee, Hu Young Jeong, Tae‐Eon Park, Jun Kang, Kyungmin Ko, Joonki Suh   +17 more
wiley   +1 more source

High-fidelity chip delayering using green (515 nm) femtosecond lasers. [PDF]

Sci Rep
Anaei MTM, Maniscalco M, Choi H, Emanuel M, Roser W, Bliznakov T, Moore T, Phoulady A, Mahyari P, Blagojevic A, May N, Egan GC, Shahbazmohamadi S, Tavousi P.   +13 more
europepmc   +1 more source

Measuring and Manipulating Density of States in Two‐Dimensional Materials With Electrochemical Capacitance

Advanced Materials Interfaces, EarlyView.
We report electrochemical quantum capacitance spectroscopy as an ambient, in situ probe for defect‐mediated electronic structure at 2D material interfaces. Using monolayer MoS2, the method resolves band edges and vacancy states, tracks sulfur‐vacancy evolution during hydrogen evolution, and links interfacial density‐of‐states changes to nearly ...
Mengyu Yan, Mitchell Kaiser, Maria L. Sushko, Xiaobin Liao, Hao Tang, Chun‐Chih Tseng, Matthew Yankowitz, Ying Xia, Jihui Yang, Jun Liu   +9 more
wiley   +1 more source