Results 131 to 140 of about 12,506 (261)

Mid-infrared InAs/InP quantum-dot lasers. [PDF]

Light Sci Appl
Wang Y, Jia H, Park JS, Zeng H, Marko IP, Bentley M, Hajraoui KE, Liu S, Yang B, Dear C, Bai M, Deng H, Chen C, Yuan J, Li J, Liu K, Duffy DA, Yan Z, Wang Z, Sweeney SJ, Zhuang Q, Ramasse QM, Chen S, Tang M, Li Q, Seeds A, Liu H.   +26 more
europepmc   +1 more source

Radiation‐Matter Interaction in Chemical Vapor Deposition‐Grown Two‐Dimensional Tungsten Disulfide

Advanced Materials Interfaces, EarlyView.
Gamma irradiation tunes the magnetic properties of CVD‐grown WS2 material. Moderate irradiation doses induce low‐temperature ferromagnetic‐like behavior, whereas higher doses suppress the magnetic response because of increased defect formation. These findings provide insight into defect‐mediated magnetism in 2D TMDs and could be relevant to future ...
Mongur Hossain, Biao Qin, Bo Li, Xidong Duan   +3 more
wiley   +1 more source

Over 1.65 GW cm^-2 sr^-1 brightness 590 nm yellow second-harmonic generation in MOCVD-grown high-strain InGaAs/GaAs quantum well VECSEL. [PDF]

Light Sci Appl
Zhang Z, Zhan W, Xiao Y, Luo C, Zhou H, Yang W, Cheng Y, Yu H, Li Q, Li X, Zhang C, Wang J.   +11 more
europepmc   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source

Advanced Laser Technologies for Efficient Crystalline Silicon Solar Cells. [PDF]

Nanomicro Lett
Liu H, Wang Z, Tan Z, Chen Y, Yang J, Shen Y, Lv M, Liu Q, Xue C, Fang L, Xu X, He D.   +11 more
europepmc   +1 more source

Bandgap‐Dependent Band‐to‐Band Tunneling in Carbon Nanotube Transistors

Advanced Materials Interfaces, EarlyView.
We systematically investigate bandgap‐dependent BTBT in SWCNT transistors by comparing wide‐bandgap (6,5) (Eg≈1.13 eV), medium‐bandgap HiPco, and narrow‐bandgap Arc‐discharge (Eg≈0.59 eV) SWCNT networks. The narrow‐bandgap networks show stronger BTBT, higher off‐state leakage, and lower on/off ratio, while wide‐bandgap (6,5) devices suppress BTBT and ...
Yuxiang Wei, Yimin Lei, Peixian Li, Hong Wang, Meisen Yi, Qing Zhu, Jiejie Zhu, Zhen Zhang, Yang Yang, Xiaohua Ma, Yue Hao   +10 more
wiley   +1 more source

Ultrafast Random Number Generation Using Broadband Polarization Chaos in QD Spin-VCSELs. [PDF]

Sensors (Basel)
Tselios C, Georgiou P, Politi CT, Alexandropoulos D.   +3 more
europepmc   +1 more source

Maskless Fabrication of PLA‐Based Neural Arrays for CNS Recording and Stimulation

Advanced Materials Interfaces, EarlyView.
Biodegradable neural interfaces enable bidirectional communication with the CNS. Through electrochemical characterization, ageing tests with impedance monitoring, and in vivo validation, we assess the performance of PLA‐based epicortical and spinal implants.
Anna De Salvo, Federica Velluto, Ilenia Sergi, Michele Di Lauro, Verónica Barranco‐Maresca, Elena Alonso‐Calviño, Yasmina Hernández‐Martín, Juan Aguilar, Juliana M. Rosa, María C. Serrano, Carolina Giulia Ferroni, Federico Rondelli, Elisa López‐Dolado, Luciano Fadiga, Fabio Biscarini   +14 more
wiley   +1 more source

Doppler Lidar Based on Mode-Locked Semiconductor Lasers. [PDF]

Micromachines (Basel)
Chen Y, Zhou M, Ma W, Sun Z, Shi Y, Zou H, Zhang Y.   +6 more
europepmc   +1 more source

High Quality MoS2 Layered Thin Films Obtained by Ionized Jet Deposition Investigated by X‐ray Absorption Spectroscopy at S L2,3 and Mo M2,3 Edges

Advanced Materials Interfaces, EarlyView.
Soft x‐ray absorption spectroscopy at the S L2,3 and Mo M2,3 edges reveals synthesis‐dependent electronic and structural order in MoS2. Bulk, exfoliated, and CVD samples show well‐resolved 2D features, while as‐deposited IJD films appear amorphous but crystallize into ordered 2H‐MoS2 upon moderate annealing, confirming IJD as a viable low‐temperature ...
Giulia Giovanelli, Alessandro Lodi, Angelo Giglia, Nicola Mahne, Rahul Kesarwani, Jana Vejpravova, Steffen Rühl, Giovanni Ligorio, Emil J. W. List‐Kratochvil, Lucia Nasi, Melanie Timpel, Marco V. Nardi, Luca Pasquali   +12 more
wiley   +1 more source