Results 41 to 50 of about 691,918 (306)

Nonlinear screening and ballistic transport in a graphene p-n junction

open access: yes, 2007
We study the charge density distribution, the electric field profile, and the resistance of an electrostatically created lateral p-n junction in graphene.
E. O. Kane   +3 more
core   +1 more source

Design of a new high lateral resistance sleeper and performance comparison with conventional sleepers in a curved railway track by means of finite element models

open access: yesLatin American Journal of Solids and Structures
The lack of lateral resistance in a curved railway track can produce misalignment problems due to the centrifugal forces when the trains pass through. Moreover, most of the times continuous welded rails (CWR) are used in nowadays railway tracks, which ...
Laura Montalbán Domingo   +3 more
doaj   +1 more source

Frozen Soil Lateral Resistance for the Seismic Design of Highway Bridge Foundations [PDF]

open access: yes, 2012
INE/AUTC 12 ...
Ge, Xiaoxuan   +3 more
core  

Organ‐specific redox imbalances in spinal muscular atrophy mice are partially rescued by SMN antisense oligonucleotides

open access: yesFEBS Letters, EarlyView.
We identified a systemic, progressive loss of protein S‐glutathionylation—detected by nonreducing western blotting—alongside dysregulation of glutathione‐cycle enzymes in both neuronal and peripheral tissues of Taiwanese SMA mice. These alterations were partially rescued by SMN antisense oligonucleotide therapy, revealing persistent redox imbalance as ...
Sofia Vrettou, Brunhilde Wirth
wiley   +1 more source

Position-Dependent Performance in 5 nm Vertically Stacked Lateral Si Nanowires Transistors [PDF]

open access: yes, 2017
In this work, we investigated the performance of vertically stacked lateral nanowires transistors (NWTs) considering the effects of series resistance. Also, we consider the vertical positions of the lateral nanowires in the stack and diameter variation ...
Adamu-Lema, F.   +3 more
core  

Analysis of Chromatic Aberration Effects in Triple-Junction Solar Cells Using Advanced Distributed Models [PDF]

open access: yes, 2011
The consideration of real operating conditions for the design and optimization of a multijunction solar cell receiver-concentrator assembly is indispensable.
Algora del Valle, Carlos   +3 more
core   +2 more sources

PARP inhibitors elicit distinct transcriptional programs in homologous recombination competent castration‐resistant prostate cancer

open access: yesMolecular Oncology, EarlyView.
PARP inhibitors are used to treat a small subset of prostate cancer patients. These studies reveal that PARP1 activity and expression are different between European American and African American prostate cancer tissue samples. Additionally, different PARP inhibitors cause unique and overlapping transcriptional changes, notably, p53 pathway upregulation.
Moriah L. Cunningham   +21 more
wiley   +1 more source

Bearing characteristics of ultra-long piles based on distributed fiber optic sensing technology

open access: yesYantu gongcheng xuebao
Based on a series of pile foundation tests from a project in the Super Headquarters Base in Shenzhen Bay, the load deformation characteristics of super-long piles under different geological conditions and the impact of friction coefficient on pile-soil ...
FU Zhangxin 1, CAO Wenzhao 1, 2, WU Xujun 1, 2, ZHANG Xingjie 2, LUO Muchi 1
doaj   +1 more source

Field studies on the effects of under sleeper pads in lateral resistance of railway [PDF]

open access: yesJournal of Structural and Construction Engineering, 2016
Under sleeper pads are used in several areas, specially, in places where transfer of vibrations to the surrounding areas should be limited. Beside of all advantages of this elements in the field of reducing costs of repair and maintenance of railway ...
Armin Monir Abbasi   +2 more
doaj  

Analysis of electrical properties in lateral Schottky barrier diode based on n-GaN and AlGaN/GaN heterostructure

open access: yesFrontiers in Physics, 2022
In this paper, the lateral Schottky barrier diodes (SBDs) with small capacitance and low turn-on voltage (Von) were fabricated on n-GaN and AlGaN/GaN heterostructure. The capacitances of lateral n-GaN SBD and lateral AlGaN/GaN SBD are 1.35 pF/mm and 0.70 
Honghui Liu   +10 more
doaj   +1 more source

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