Results 121 to 130 of about 25,501 (266)

Intrinsic Negative Magnetoresistance and Broadband Photoresponse in Magnetic van der Waals Crystal TaFeTe2

Advanced Science, EarlyView.
2D van der Waals (vdW) materials MM′Te2 with broken symmetry attract great interest for unique magnetic structures and optical‐phonon‐induced phase transitions. We report mechanically exfoliable TaFeTe2 single crystals, exhibiting spin‐glass behavior, intrinsic unsaturated negative magnetoresistance up to 9 T, self‐powered internal photocurrent, and ...
Changcun Li, Jiazhen Wu, Sirong Lu, Lei Liang, Wenying Zhou, Bingke Zhang, Degang Zhao, Fucai Liu   +7 more
wiley   +1 more source

Enhancing Neuromorphic Robustness via Recurrence Resonance: The Role of Shared Weak Attractors in Quantum Logic Networks. [PDF]

Biomimetics (Basel)
Huang Y, Gunji YP.
europepmc   +1 more source

Chemical Doping Engineering of Polarization and Topological Textures in van der Waals Ferroelectric CuInP2S6

Advanced Science, EarlyView.
Our work reports that Li⁺ doping in CuInP2S₆ induces coexistence of high‐ and low‐polarization states, which fosters a rich spectrum of topological polar textures, such as bubbles and labyrinth domains. An unconventional flexoelectric effect is also discovered, where strain gradients can mechanically manipulate these polarization states and their ...
Lei Gao, Wenhao Li, Fei Sun, Ziyi Zhou, Zhihao Shen, Jianwei Liang, He Jiang, Weiming Xiong, Weijin Chen, Xiaoyue Zhang, Yi Zhang, Xinzhi Liu, Yue Zheng   +12 more
wiley   +1 more source

An Extended Epistemic Framework Beyond Probability for Quantum Information Processing with Applications in Security, Artificial Intelligence, and Financial Computing. [PDF]

Entropy (Basel)
Iovane G.
europepmc   +1 more source

On the Ordering Mechanism of Cu+ in 2D van der Waals Multiferroic CuCrP2S6

Advanced Science, EarlyView.
Temperature‐dependent X‐ray single‐crystal diffuse scattering measurements of CuCrP2S6 in the (H, K, 0) plane reveal the gradual emergence and strengthening of short‐range order upon cooling from 230 to 170 K. At intermediate temperatures, diffuse features become pronounced and eventually lock into sharp incommensurate satellite reflections, indicating
Jiasen Guo, Yongqiang Cheng, Michael A. Susner, Ryan P. Siebenaller, Zachary Morgan, Feng Ye   +5 more
wiley   +1 more source

Arrow of Time in Quantum Mechanics and Set Theory. [PDF]

Entropy (Basel)
Król J.
europepmc   +1 more source

Lattice Dynamics Across the High‐Pressure Phase Transition in CrTe

Advanced Electronic Materials, EarlyView.
ABSTRACT High‐pressure physics provides a powerful means of tuning interatomic interactions, enabling the discovery of novel structural and physical phenomena in materials. Chromium telluride, a transition metal chalcogenide, is particularly responsive to such external stimuli, exhibiting a broad spectrum of pressure‐, temperature‐, and stoichiometry ...
Costanza Borghesi, Giacomo Giorgi, Daniele Varsano, Riccardo Rurali   +3 more
wiley   +1 more source

Power optimized quaternary logic circuits based on CNTFETs. [PDF]

Discov Nano
Rupani A, Bansal D, Sharma K.
europepmc   +1 more source

Reversible and Controllable Transition Between Filamentary and Interfacial Resistive Switching in HfO2‐Based Memristors

Advanced Electronic Materials, EarlyView.
5 nm HfO2 memristors exhibit a fully reversible, voltage‐controlled transition between filamentary and interfacial switching within the same device. At high voltages, a filament forms and dominates the conduction, whereas at lower voltages the device reversibly returns to interfacial mode without defect accumulation, implying a new reversible ...
Cuo Wu, Hao Shen, Richard Schroedter, Chong Peng, Hampus Hoffman, Stefan Slesazeck, Ronald Tetzlaff, Thomas Mikolajick, Benjamin Max   +8 more
wiley   +1 more source

Reconfigurable, Non‐Volatile Switching in WO3 Film for Resistive Memory and Multistate Programming Toward Energy‐Efficient Neuromorphic Computing Applications

Advanced Electronic Materials, EarlyView.
WO3${\rm WO}_3$ based resistive switching device was precisely controlled and shows the reconfigurable, non‐volatile switching which can be programmable to multi‐resistance states for memory applications. The memory device can also be utilised for low energy neuromorphic application.
Keval Hadiyal, Nagarajan Raghavan, Ramesh Mohan Thamankar   +2 more
wiley   +1 more source