Results 61 to 70 of about 4,546,528 (308)

Graphene field-effect-transistors with high on/off current ratio and large transport band gap at room temperature

open access: yes, 2010
Graphene is considered to be a promising candidate for future nano-electronics due to its exceptional electronic properties. Unfortunately, the graphene field-effect-transistors (FETs) cannot be turned off effectively due to the absence of a bandgap ...
Appenzeller J.   +25 more
core   +1 more source

Interaction-induced Interlayer Charge Transfer in the Extreme Quantum Limit [PDF]

open access: yesPhys. Rev. B 96, 081102(R) (2017), 2017
An interacting bilayer electron system provides an extended platform to study electron-electron interaction beyond single layers. We report here experiments demonstrating that the layer densities of an asymmetric bilayer electron system oscillate as a function of perpendicular magnetic field that quantizes the energy levels.
arxiv   +1 more source

Single-Layer Graphene-Based Transparent and Flexible Multifunctional Electronics for Self-Charging Power and Touch-Sensing Systems.

open access: yesACS Applied Materials and Interfaces, 2019
Applications in the field of portable and wearable electronics are becoming multifunctional, and the achievement of transparent electronics extensively expands the applications into devices such as wearable flexible displays or skin-attachable mobile ...
Sungwoo Chun   +7 more
semanticscholar   +1 more source

Highly efficient fiber-shaped organic solar cells toward wearable flexible electronics

open access: yesnpj Flexible Electronics, 2022
Fiber-shaped solar cells (FSCs) show great potential to act as the power source in the wearable electronics field. Due to the unique advantages of the fiber-shaped organic solar cells (FOSCs), such as all-solid-state, ease of fabrication, and ...
Dan Lv   +3 more
semanticscholar   +1 more source

Monolithic Pixel Sensors in Deep-Submicron SOI Technology with Analog and Digital Pixels

open access: yes, 2008
This paper presents the design and test results of a prototype monolithic pixel sensor manufactured in deep-submicron fully-depleted Silicon-On-Insulator (SOI) CMOS technology.
Battaglia   +19 more
core   +1 more source

Flexible supercapacitor electrodes based on real metal-like cellulose papers

open access: yesNature Communications, 2017
With ligand-mediated layer-by-layer assembly between metal nanoparticles and small organic molecules, the authors prepare metallic paper electrodes for supercapacitors with high power and energy densities.
Yongmin Ko   +5 more
doaj   +1 more source

Single layer of MX₃ (M = Ti, Zr; X = S, Se, Te): a new platform for nano-electronics and optics. [PDF]

open access: yesPhysical Chemistry, Chemical Physics - PCCP, 2015
A serial of two-dimensional titanium and zirconium trichalcogenides nanosheets MX3 (M = Ti, Zr; X = S, Se, Te) were investigated based on first-principles calculations.
Yingdi Jin, Xingxing Li, Jinlong Yang
semanticscholar   +1 more source

Monolithic Pixel Sensors in Deep-Submicron SOI Technology

open access: yes, 2009
Monolithic pixel sensors for charged particle detection and imaging applications have been designed and fabricated using commercially available, deep-submicron Silicon-On-Insulator (SOI) processes, which insulate a thin layer of integrated full CMOS ...
  +11 more
core   +1 more source

Flexible three-dimensional artificial synapse networks with correlated learning and trainable memory capability

open access: yesNature Communications, 2017
High-density information storage calls for the development of modern electronics with multiple stacking architectures that increase the complexity of three-dimensional interconnectivity. Here, Wu et al.
Chaoxing Wu   +4 more
doaj   +1 more source

The Layer 0 Inner Silicon Detector of the D0 Experiment

open access: yes, 2009
This paper describes the design, fabrication, installation and performance of the new inner layer called Layer 0 (L0) that was inserted in the existing Run IIa Silicon Micro-Strip Tracker (SMT) of the D0 experiment at the Fermilab Tevatron collider.
A. Bean   +54 more
core   +1 more source

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