Results 201 to 210 of about 212,768 (263)
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Radiation induced leakage current and stress induced leakage current in ultra-thin gate oxides
IEEE Transactions on Nuclear Science, 1998Low-field leakage current has been measured in thin oxides after exposure to ionising radiation. This Radiation Induced Leakage Current (RILC) can be described as an inelastic tunnelling process mediated by neutral traps in the oxide, with an energy loss of about 1 eV.
M. Ceschia +4 more
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2017
Leakage current can be defined as the current flowing through the ground in a lot of systems. The magnitude of the leakage current is defined based on the application and its topology. In particular, applications with transformerless topologies can be attacked by leakage current.
Kyo-Beum Lee, June-Seok Lee
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Leakage current can be defined as the current flowing through the ground in a lot of systems. The magnitude of the leakage current is defined based on the application and its topology. In particular, applications with transformerless topologies can be attacked by leakage current.
Kyo-Beum Lee, June-Seok Lee
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LEAKAGE CURRENT REDUCTION IN VLSI SYSTEMS
Journal of Circuits, Systems and Computers, 2002There is a growing need to analyze and optimize the stand-by component of power in digital circuits designed for portable and battery-powered applications. Since these circuits remain in stand-by (or sleep) mode significantly longer than in active mode, their stand-by current, and not their active switching current, determines their battery life. Hence,
David T. Blaauw +3 more
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2002
We will present a method for the evaluation of the charge distribution and quantum-mechanical leakage currents in ultra-thin metal-insulator-semiconductor (MIS) gate stacks that may be composed of several layers of materials. Also the charge distribution due to the finite penetration depth inside the insulating material stack is obtained.
Wim Magnus, Wim Schoenmaker
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We will present a method for the evaluation of the charge distribution and quantum-mechanical leakage currents in ultra-thin metal-insulator-semiconductor (MIS) gate stacks that may be composed of several layers of materials. Also the charge distribution due to the finite penetration depth inside the insulating material stack is obtained.
Wim Magnus, Wim Schoenmaker
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Leakage current mechanism and effect of oxygen vacancy on the leakage current of Bi5Nb3O15 films
Journal of the European Ceramic Society, 2010Abstract The effect of oxygen partial pressure (OPP) on the leakage current density of Bi 5 Nb 3 O 15 (B 5 N 3 ) films grown on Pt electrodes was investigated. The leakage current density was very high for the film grown under a low OPP of 1.7 mTorr, but was significantly reduced by the subsequent annealing under a high oxygen pressure or for the ...
Kyung-Hoon Cho +7 more
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Leakage current modeling for GPGPU systems
2011 International SoC Design Conference, 2011In the state-of-the-art VLSI designs, the importance of leakage current estimation is significantly growing. This paper presents a new approach to leakage current modeling, which is to be used for GPGPU (General-Purpose Computing on Graphics Processing Units) systems.
Jungil Ahn, Jinwook Kim, Young Hwan Kim
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Leakage current starved domino logic
Proceedings of the 16th ACM Great Lakes symposium on VLSI, 2006A new circuit technique based on a single PMOS sleep transistor and a dual threshold voltage CMOS technology is proposed in this paper for simultaneously reducing subthreshold and gate oxide leakage currents in idle domino logic circuits. In the sleep mode, the output inverter and keeper transistor of a domino gate are disconnected from the power ...
Zhiyu Liu, Volkan Kursun
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Modeling drive currents and leakage currents: a dynamic approach
Journal of Computational Electronics, 2009The dynamics of electrons and holes propagating through the nano-scaled channels of modern semiconductor devices can be seen as a widespread manifestation of non-equilibrium statistical physics and its ruling principles. In this respect both the devices that are pushing conventional CMOS technology towards the final frontiers of Moore’s law and the ...
Magnus, Wim, Brosens, Fons, Sorée, Bart
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A leakage current replica keeper for dynamic circuits
2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers, 2006We present a leakage current replica (LCR) keeper for dynamic domino gates that uses an analog current mirror to replicate the leakage current of a dynamic gate pull-down stack and thus tracks process, voltage, and temperature. The proposed keeper has an overhead of one field-effect transistor per gate plus a portion of a shared current mirror ...
Yolin Lih +2 more
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Proceeding of the thirteenth international symposium on Low power electronics and design - ISLPED '08, 2008
Summary form only given. In only 5 years, leakage developed from an academic corner phenomenon to a central problem of embedded system design. In sub 90 nm designs the leakage power is already exceeding the dynamic power. The intention of this tutorial is to first review the mechanisms causing leakage and the parameters and imperfections causing ...
Wolfgang Nebel, Domenik Helms
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Summary form only given. In only 5 years, leakage developed from an academic corner phenomenon to a central problem of embedded system design. In sub 90 nm designs the leakage power is already exceeding the dynamic power. The intention of this tutorial is to first review the mechanisms causing leakage and the parameters and imperfections causing ...
Wolfgang Nebel, Domenik Helms
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