Results 21 to 30 of about 315 (122)

Evaluation of Inline High-Intensity Illumination Treatments against LeTID

open access: yes, 2020
High-intensity illumination treatments are a versatile method to reduce the performance loss of solar cells due to LeTID since they can be applied at any point of time between cell fabrication and module assembly. We evaluate the potential of these treatments using a true inline treatment tool and commercially available PERC solar cells.
Vahlman, H.   +4 more
openaire   +2 more sources

Influence of dielectric passivation layer thickness on LeTID in multicrystalline silicon

open access: yes2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), 2018
Hydrogen released from surface passivation layers during high-temperature firing plays a crucial role in surface and bulk defect passivation, particularly in multicrystalline silicon solar cells. However, recent studies have identified hydrogen as a possible catalyst to activate recombination within silicon.
Utkarshaa Varshney   +9 more
openaire   +2 more sources

Light and elevated Temperature Induced Degradation (LeTID) of the carrier lifetime in multicrystalline silicon [PDF]

open access: yes, 2020
Solar cells fabricated on multicrystalline silicon show a pronounced degradation of their energy conversion efficiency under illumination at elevated temperature. This effect is frequently denoted LeTID (’Light and elevated Temperature Induced Degradation’) in the literature.
Bredemeier, Dennis
openaire   +2 more sources

Temporary Recovery of the Defect Responsible for Light- and Elevated Temperature-Induced Degradation: Insights into the Physical Mechanisms behind LeTID

open access: yes, 2022
S.1591-1603The effect of light- and elevated temperature-induced degradation (LeTID) can be nonpermanently reversed by charge carrier injection below the degradation temperature (commonly used degradation temperatures are above ~70 °C). In this study, we
Kwapil, Wolfram   +3 more
core   +2 more sources

Identify, analyse and mitigate—Quantification of technical risks in PV power systems

open access: yesProgress in Photovoltaics: Research and Applications, Volume 31, Issue 12, Page 1285-1298, December 2023., 2023
Technical risks are important criteria to consider when investing in new and existing PV installations. Quantitative knowledge of these risks is one of the key factors for the different stakeholders to make reliable business decisions before and during the operation of their PV assets.
Magnus Herz   +5 more
wiley   +1 more source

Towards the development of an optimized Decision Support System for the PV industry: A comprehensive statistical and economical assessment of over 35,000 O&M tickets

open access: yesProgress in Photovoltaics: Research and Applications, Volume 31, Issue 12, Page 1215-1234, December 2023., 2023
We developed several key tools for integrating a data‐driven decision support into existing PV O&M platforms based on O&M ticket evaluation. The foundation is the TRUST‐PV Risk Matrix, a standardized categorization framework for tickets. Based on that, more than 35,000 O&M tickets have been statistically evaluated to calculate frequency and probability
Sascha Lindig   +6 more
wiley   +1 more source

System performance loss due to LeTID

open access: yesEnergy Procedia, 2017
Abstract If not adequately suppressed, Light and elevated Temperature Induced Degradation (LeTID) has been shown to cause severe degradation of multicrystalline (mc-Si) silicon solar cells and modules with passivated emitter and rear cell (PERC). Within this work, the system performance of LeTID-sensitive mc-Si modules is investigated when operated ...
Friederike Kersten   +7 more
openaire   +1 more source

Investigating Wafer Quality in Industrial Czochralski‐Grown Gallium‐Doped p‐Type Silicon Ingots with Melt Recharging

open access: yesSolar RRL, Volume 7, Issue 15, August 2023., 2023
A systematic study of the impact of melt recharging on the electronic quality of gallium‐doped Czochralski ingots is presented. Iron being the most ubiquitous metal impurity in silicon, iron–gallium complex is used as a tracer recombination center to quantify the evolution of iron concentration in the subsequently grown ingots.
Rabin Basnet   +7 more
wiley   +1 more source

Influence of Al2O3 and SiNx Passivation Layers on LeTID

open access: yesEnergy Procedia, 2016
AbstractIn this work the carrier lifetime evolution of different passivation layers under illumination and at elevated temperatures are investigated. Multicrystalline silicon lifetime samples were treated by implementing typical industrial processing steps.
Kersten, Friederike   +2 more
openaire   +1 more source

High-intensity illumination treatments against LeTID - Intensity and temperature dependence of stability and inline feasibility

open access: yes, 2022
We study the mitigation of light- and elevated temperature-induced degradation (LeTID) with high-intensity illumination treatments, placing special emphasis on inline feasibility.
Nekarda, Jan   +3 more
core   +1 more source

Home - About - Disclaimer - Privacy