Results 261 to 270 of about 10,427,001 (301)

Improved Light-Output Power of GaN LEDs by Selective Region Activation

IEEE Photonics Technology Letters, 2004
A novel selective high resistivity region (SHRR) is created under the p-pad metal electrode of a normal GaN light emitting diode. In conventional designs, light generated under the opaque p-pad metal electrode is absorbed or reflected by the contact and lost.
C.-C. Liu, Y.-H. Chen, M.-P. Houng, Y.-H. Wang, Y.-K. Su, W.-B. Chen, S.-M. Chen   +6 more
openaire   +1 more source

Improved light output power of GaN-based light-emitting diodes by using Ag grids

Microelectronic Engineering, 2012
We investigate the effect of 1-(1-D) and 2-dimensional (2-D) patterned Ag grids combined with Al-doped ZnO contacts on the electrical and optical properties of GaN-based light-emitting diodes (LEDs). The ratio of the grid width to the gap between the grids varies from 2.8 for the 1-D to 38.7 for the 2-D grids.
Se-Yeon Jung, Joon-Ho Oh, Tae-Yeon Seong
openaire   +1 more source

Output power enhancement of light-emitting diodes with defect passivation layer

SPIE Proceedings, 2010
We demonstrate high efficiency blue light emitting diodes with defect passivation layers. The defect passivation layers were formed by defect selective wet etching, SiO 2 deposition, and chemical mechanical polishing process. The process does not require photolithography patterning.
Ming-Hua Lo, Po-Min Tu, Yuh-Jen Cheng, Chao-Hsun Wang, Cheng-Wei Hung, Shih-Chieh Hsu, Hao-Chung Kuo, Hsiao-Wen Zan, Shing-Chung Wang, Chun-Yen Chang, Che-Ming Liu   +10 more
openaire   +1 more source

High Frequency Modulation of Light Output Power in Double-Heterojunction Laser

Journal of Infrared, Millimeter and Terahertz Waves, 1991
V. B. Gorfinkel, B. M. Gorbovitsky, I. I. Filatov   +2 more
exaly   +2 more sources

Enhanced Light Output Power of InGaN/GaN Light Emitting Diodes with Embedded Air Prisms

Electrochemical and Solid-State Letters, 2010
We report characteristics of the InGaN/GaN light emitting diodes (LEDs) grown by selective metallorganic chemical vapor deposition with embedded air prisms (EAPs) via a wet etching process. At first, aqueous KOH solution, an etchant, removed the SiO 2 mask pattern to facilitate a subsequent etching through N-face GaN to achieve crystallographically ...
Hyung Gu Kim, Hee Yun Kim, Hyun Kyu Kim, Jae Hyoung Ryu, Ji Hye Kang, Nam Han, Periyayya Uthirakumar, Chang-Hee Hong   +7 more
openaire   +1 more source

Enhanced Light Output Power in InGaN Light-Emitting Diodes by Fabricating Inclined Undercut Structure

Journal of The Electrochemical Society, 2006
The InGaN-based light-emitting diode (LED) with an inclined undercut structure is fabricated through the photoelectrochemical two-step process to increase light extraction efficiency. In the first step the sidewall-undercut structure at the p-type and n-type GaN interface is created by selective wet oxidation on an n-type GaN surface in pure H 2 O ...
Chia-Feng Lin, Zhong-Jie Yang, Bing-Hua Chin, Jing-Hui Zheng, Jing-Jie Dai, Bing-Cheng Shieh, Cheng-Ching Chang   +6 more
openaire   +1 more source

Improvement in the Light Output Power of GaN-Based Light Emitting Diodes by One-Step Current Blocking Design

Japanese Journal of Applied Physics, 2009
This paper presented the InGaN/GaN light-emitting diodes (LEDs) using one-step design of indium–tin-oxide (ITO) layer as the current blocking layer (CBL) structure was fabricated successfully and the optoelectronic properties were also measured. The ITO CBL LEDs exhibit higher light output power (16.3% at 20 mA) compared with that of the reference LEDs
Chun-Fu Tsai, Yan-Kuin Su, Chun-Liang Lin   +2 more
openaire   +1 more source

Improving the light output power of GaN-based light-emitting diodes through the use of SiO2 cones

Materials Science in Semiconductor Processing, 2013
Abstract We introduced a simple wet-etching process to form SiO2 cones and investigated the effect of the size and coverage of the SiO2 cones on the output power of GaN-based light-emitting diodes (LEDs). The diameter of the cones varies from 2.8 to 17.1 μm and the height from 0.6 to 2.0 μm.
Se-Yeon Jung, Jongho Choe, Myung-Su Seok, Q-Han Park, Tae-Yeon Seong   +4 more
openaire   +1 more source

High Light Output Power Density AlGaN-Based Deep Ultraviolet Micro-Light-Emitting Diodes

Coatings
Compared with mercury lamps, AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) possess many distinctive advantages, including their being pollution-free, their long lifespan, their low operating voltage, their compact size, and their high-frequency modulation capability.
Jianchang Yan, Naixin Liu, Xuejiao Sun
exaly   +2 more sources

Enhancement of Light Output Power of GaN-Based Light-Emitting Diodes by a Reflective Current Blocking Layer

IEEE Photonics Technology Letters, 2011
In this study, a GaN-based light-emitting diode (LED) with a distributed Bragg reflector (DBR) current blocking layer (CBL) beneath the p-pad electrode is demonstrated. A high reflectivity DBR structure is composed of five periods SiO2 and TiO2 layers.
C. C. Kao, Y. K. Su, C. L. Lin
openaire   +1 more source