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Enhancements in light output power by MOCVD patterned growth and in situ roughening
2014Technologies in III-Nitride based Light Emitting Diode (LED) have been developing rapidly in the past decade. Having longer life time and higher light output efficiency, LED is forecasted to be the next generation general light source, replacing the existing incandescent and fluorescent lamps.
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Electrochemical and Solid-State Letters, 2010
The light output characteristics of GaN-based vertical light emitting diodes (1 ×1 mm) fabricated by the multifunctional bonding material system have been investigated as a function of the linewidth of a SiO 2 current blocking layer (CBL). As the CBL width increases from 0 to 20 μm, the forward voltage increases from 2.82 to 2.88 V at 350 mA, whereas ...
Hwan Hee Jeong +6 more
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The light output characteristics of GaN-based vertical light emitting diodes (1 ×1 mm) fabricated by the multifunctional bonding material system have been investigated as a function of the linewidth of a SiO 2 current blocking layer (CBL). As the CBL width increases from 0 to 20 μm, the forward voltage increases from 2.82 to 2.88 V at 350 mA, whereas ...
Hwan Hee Jeong +6 more
openaire +1 more source
LIGHT-OUTPUT-POWER SELF-AWARENESS LIGHT-EMITTING DEVICE
2021GAO YING +3 more
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High Light Output-Power Single-Longitudinal-Mode Semiconductor Laser Diodes
Journal of Lightwave Technology, 1985I Mito
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Light-driven actuator with high output power density inspired by insect wings
Nature MaterialsZhihui Qin, Yan Jiang, Siowling Soh
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High-Output-Power Ultraviolet Light Source From Quasi-2D GaN Quantum Structure
Advanced Materials, 2016Xuelin Yang +2 more
exaly
Deep Ultraviolet Light Source From Ultrathin GaN/AlN MQW Structures With Output Power Over 2 Watt
Advanced Optical Materials, 2019Xuelin Yang +2 more
exaly