Results 11 to 20 of about 10,691,328 (287)
Line Defects in Quasicrystals [PDF]
The six-dimensional framework of the integral formalism for line defects (straight dislocations and line forces) in anisotropic elasticity has been extended to a 2n-dimen- sional integral formalism for line defects in quasicrystals (n=4,5,6 for one-, two-
Markus Lazar
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Universal constraints for conformal line defects [PDF]
We present a novel framework for deriving integral constraints for correlators on conformal line defects. These constraints emerge from the nonlinearly realized ambient-space conformal symmetry.
Barak Gabai, Amit Sever, De-Liang Zhong
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q-nonabelianization for line defects [PDF]
Abstract We consider the q-nonabelianization map, which maps links L in a 3-manifold M to combinations of links $$ \tilde{L} $$ L ˜ in a branched N -fold cover $$ \tilde{M} $$ M ˜
Andrew Neitzke, Fei Yan
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Geometric scattering in the presence of line defects [PDF]
18 pages, 5 ...
Hai Viet Bui +2 more
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Atomic line defects and zero-energy end states in monolayer Fe(Te,Se) high-temperature superconductors [PDF]
Majorana zero-energy bound states have been proposed to exist at the ends of one-dimensional Rashba nanowires proximity-coupled to an s -wave superconductor in an external magnetic field 1 , 2 . Such hybrid structures are a central platform in the search
Cheng Chen +6 more
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Potts Models with a Defect Line [PDF]
We provide a detailed analysis of the correlation length in the direction parallel to a line of modified coupling constants in the ferromagnetic Potts model on $\mathbb{Z}^d$ at temperatures $T>T_c$. We also describe how a line of weakened bonds pins the interface of the Potts model on $\mathbb{Z}^2$ below its critical temperature. These results are
Ott, Sébastien, Velenik, Yvan
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Statistical models with a line of defect [PDF]
14 pages, LATEX file, ISAS/EP/94/30 (Figures added, originally missed for E-mail transmission problem.)
Delfino, Gesualdo +2 more
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Subcritical percolation with a line of defects [PDF]
We consider the Bernoulli bond percolation process $\mathbb{P}_{p,p'}$ on the nearest-neighbor edges of $\mathbb{Z}^d$, which are open independently with probability $pp_c'$. Moreover, $p_c'(p,2)=p_c'(p,3)=p$, and $p_c'(p,d)>p$ for $d\geq 4$. We also analyze the behavior of $ξ_p-ξ_{p,p'}$ as $p'\downarrow p_c'$ in dimensions $d=2,3$.
Friedli Sacha +2 more
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Defects in silicene: vacancy clusters, extended line defects, and Di-adatoms. [PDF]
AbstractDefects are almost inevitable during the fabrication process and their existence strongly affects thermodynamic and (opto)electronic properties of two-dimensional materials. Very recent experiments have provided clear evidence for the presence of larger multi-vacancies in silicene, but their structure, stability and formation mechanism remain ...
Li S +6 more
europepmc +4 more sources
Band Bending and Valence Band Quantization at Line Defects in MoS2. [PDF]
The variation of the electronic structure normal to 1D defects in quasi-freestanding MoS2, grown by molecular beam epitaxy, is investigated through high resolution scanning tunneling spectroscopy at 5K.
C. Murray +8 more
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