Results 41 to 50 of about 25,124 (221)

Large linear magnetoresistance and magnetothermopower in layered SrZnSb2 [PDF]

Applied Physics Letters, 2012
We report the large linear magnetoresistance (∼300% in 9 T field at 2 K) and magnetothermopower in layered SrZnSb2 crystal with quasi-two-dimensional Sb layers. A crossover from the semiclassical parabolic field dependent magnetoresistance to linear field dependent magnetoresistance with increasing magnetic field is observed.
Wang, Kefeng, Petrovic, C.
openaire   +2 more sources

Quantum transport of two-dimensional Dirac fermions in SrMnBi2

, 2012
We report two-dimensional quantum transport in SrMnBi$_2$ single crystals. The linear energy dispersion leads to the unusual nonsaturated linear magnetoresistance since all Dirac fermions occupy the lowest Landau level in the quantum limit.
A. A. Abrikosov, C. Petrovic, D. Graf, D. Shoenberg, G. Cordier, H. A. Yang, Hechang Lei, Kefeng Wang, S. W. Tozer   +8 more
core   +1 more source

Universal Properties of Linear Magnetoresistance in Strongly Disordered Semiconductors

, 2010
Linear magnetoresistance occurs in semiconductors as a consequence of strong electrical disorder and is characterized by nonsaturating magnetoresistance that is proportional to the applied magnetic field. By investigating a disordered MnAs-GaAs composite
Barua, R., Bennett, S. P., Heiman, D., Johnson, H. G., Lewis, L. H   +4 more
core   +1 more source

Impact of confined LO-phonons on the Hall effect in doped semiconductor superlattices

Journal of Science: Advanced Materials and Devices, 2016
Based on the quantum kinetic equation method, the Hall effect in doped semiconductor superlattices (DSSL) has been theoretically studied under the influence of confined LO-phonons and the laser radiation.
Nguyen Quang Bau, Do Tuan Long
doaj   +1 more source

Negative Magnetoresistance in Dirac Semimetal Cd3As2 [PDF]

, 2015
A large negative magnetoresistance is anticipated in topological semimetals in the parallel magnetic and electric field configuration as a consequence of the nontrivial topological properties. The negative magnetoresistance is believed to demonstrate the
Fan, Zhiyong, He, Hongtao, Li, Hui, Liu, Hongchao, Lu, Hai-Zhou, Ma, Rong, Shen, Shun-Qing, Wang, Jiannong, Zhang, Huachen   +8 more
core   +4 more sources

Linearization strategies for high sensitivity magnetoresistive sensors [PDF]

The European Physical Journal Applied Physics, 2015
Ultrasensitive magnetic field sensors envisaged for applications on biomedical imaging require the detection of low-intensity and low-frequency signals. Therefore linear magnetic sensors with enhanced sensitivity low noise levels and improved field detection at low operating frequencies are necessary.
Ana V. Silva, Diana C. Leitao, João Valadeiro, José Amaral, Paulo P. Freitas, Susana Cardoso   +5 more
openaire   +1 more source

2D transport and weak antilocalization effect in topological semimetal PtBi2 nanoflakes

AIP Advances
The striking anisotropic magnetoresistance and linear magnetoresistance observed in topological semimetals have attracted immense attention owing to their potential in magnetoresistance devices. We investigated the magnetotransport properties of trigonal
Ankang Zhu, Cheng Wang, Lei Tong, Di Liu, Li Xu, Yu Zhou, Hui Gao, Li Li, Qingqing Wang, Li Wang, Hao Gong   +10 more
doaj   +1 more source

Robust linear magnetoresistance in WTe2

, 2015
Unsaturated magnetoresistance (MR) has been reported in WTe2, and remains irrepressible up to very high field. Intense optimization of the crystalline quality causes a squarely-increasing MR, as interpreted by perfect compensation of opposite carriers.
Pan, Xing-Chen, Pan, Yiming, Jiang, Juan, Zuo, Huakun, Liu, Huimei, Chen, Xuliang, Wei, Zhongxia, Zhang, Shuai, Wang, Zhihe, Wan, Xiangang, Yang, Zhaorong, Feng, Donglai, Xia, Zhengcai, Li, Liang, Song, Fengqi, Wang, Baigeng, Zhang, Yuheng, Wang, Guanghou   +17 more
openaire   +2 more sources

Switching Current vs. Magnetoresistance in Magnetic Multilayer Nanopillars

, 2003
We study current-driven magnetization switching in nanofabricated magnetic trilayers, varying the magnetoresistance in three different ways. First, we insert a strongly spin-scattering layer between the magnetic trilayer and one of the electrodes, giving
Bass, J., Birge, Norman O., Pratt Jr., W. P., Urazhdin, S.   +3 more
core   +1 more source

Magnetoresistance of compensated semimetals in confined geometries [PDF]

, 2017
Two-component conductors -- e.g., semi-metals and narrow band semiconductors -- often exhibit unusually strong magnetoresistance in a wide temperature range.
Alekseev, P. S., Dmitriev, A. P., Gornyi, I. V., Kachorovskii, V. Yu., Narozhny, B. N., Schütt, M., Titov, M.   +6 more
core   +2 more sources