Results 191 to 200 of about 499,969 (291)
Some of the next articles are maybe not open access.
Isothermal liquid phase epitaxy
Progress in Crystal Growth and Characterization, 1983Abstract The epitaxial growth of semiconductor solid solutions from a liquid phase appears to be possible under stringent isothermal conditions. The driving force of such epitaxy can be liquid phase supersaturation caused by isothermal mixing of liquidus solutions or supersaturation in the solid phase resulting from thermodynamic nonequilibrium of ...
V.N. Lozovskii +2 more
openaire +1 more source
Yb:CaF2 grown by liquid phase epitaxy
Optical Materials, 2011Ytterbium doped CaF2 crystalline layers have been grown for the first time from high temperature solutions at controlled atmosphere by using the liquid phase epitaxy technique. Doped layers having thicknesses between a few microns to a hundred of microns have been grown onto non-oriented and (1 1 1) oriented CaF2 substrates.
Peña, Alexandra +7 more
openaire +2 more sources
Liquid phase epitaxy of AlGaInSb
Journal of Crystal Growth, 1985Abstract Epitaxial growth of the AlGaInSb pseudo-ternary on GaAs, GaSb and InSb substrates was investigated. The LPE growth was performed using In- and Ga-rich melts and different growth parameters such as cooling rate, supercooling, etc. The heteroepitaxial systems were evaluated by several methods; the growth morphologies and layer thickness were ...
E. Lendvay +5 more
openaire +1 more source
Journal of Crystal Growth, 1997
In the course of producing waveguides for laser applications, liquid phase epitaxy has been used to grow thin films of LiY1 − x − yLnxGdyF4 (Ln = Nd or Er) on LiYF4 substrates. Covered by a LiYF4 cladding layer, waveguides of low optical loss (< 0.3 dB/cm) were obtained.
P. Rogin, J. Hulliger
openaire +1 more source
In the course of producing waveguides for laser applications, liquid phase epitaxy has been used to grow thin films of LiY1 − x − yLnxGdyF4 (Ln = Nd or Er) on LiYF4 substrates. Covered by a LiYF4 cladding layer, waveguides of low optical loss (< 0.3 dB/cm) were obtained.
P. Rogin, J. Hulliger
openaire +1 more source
Applied Physics A Solids and Surfaces, 1991
This paper presents a comprehensive review of the method of liquid phase epitaxy (LPE) of semiconductors. In Sect. 1 the physical principles including diffusion-limited growth and solid-liquid phase diagrams are treated in detail. In Sect. 2 technological aspects and various kind of growth systems including industrial versions are described.
openaire +1 more source
This paper presents a comprehensive review of the method of liquid phase epitaxy (LPE) of semiconductors. In Sect. 1 the physical principles including diffusion-limited growth and solid-liquid phase diagrams are treated in detail. In Sect. 2 technological aspects and various kind of growth systems including industrial versions are described.
openaire +1 more source
2004
Liquid phase epitaxy (LPE) is the deposition from a liquid phase (a solution or melt) of a thin single crystalline layer isostructural with the substrate crystal [5.1]. Usually LPE is performed using a solution as the liquid phase, because this is advantageous against the cases when a melt is used.
Marian A. Herman +2 more
openaire +1 more source
Liquid phase epitaxy (LPE) is the deposition from a liquid phase (a solution or melt) of a thin single crystalline layer isostructural with the substrate crystal [5.1]. Usually LPE is performed using a solution as the liquid phase, because this is advantageous against the cases when a melt is used.
Marian A. Herman +2 more
openaire +1 more source
Epitaxial lateral overgrowth of InP by liquid phase epitaxy
Journal of Crystal Growth, 1995Abstract Epitaxial lateral overgrowth (ELO) of InP has been conducted for the first time by liquid phase epitaxy (LPE). The overgrowth has been studied for seeds in SiO 2 of 2.5 to 7 μm width using starlike and parallel patterns. A wide and flat ELO layer was grown on (001) and (111)B oriented substrates at growth temperature between 773 and 873 K ...
S. Naritsuka, T. Nishinaga
openaire +1 more source
Liquid phase epitaxy of hexagonal ferrites
Materials Research Bulletin, 1975Abstract Single crystal films of the hexagonal ferrite Zn 2 Y, having the chemical formula Ba 2 Zn 2 Fe 12 O 22 , were grown by the isothermal dipping method of liquid phase epitaxy using a PbOBaOB 2 O 3 flux. The substrates were flux-grown M-type hexagonal ferrite crystals having the chemical formula BaFe 12 O 19 .
F.S. Stearns, H.L. Glass
openaire +1 more source
Liquid phase epitaxial growth of AlGaSb
Journal of Crystal Growth, 1984Abstract Optimum conditions for the liquid phase epitaxial growth of AlGaSb and for the heat treatment of substrates were investigated. The high-temperature heat treatment of GaSb substrates prior to growth was found to damage the surface of the substrates, resulting in poor interfacial properties and formation of Ga inclusions.
Toshimi Wada +2 more
openaire +1 more source
Dopant incorporation during liquid phase epitaxy
Journal of Applied Physics, 1981A quantitative treatment of nonequilibrium dopant incorporation during the growth by conventional liquid phase epitaxy (LPE) as well as by electroepitaxy has been put forward. Analytical expression for the stationary distribution of dopant concentration and potential in the solid near the liquid metal-semiconductor interface is derived.
K. Mazuruk, T. Bryśkiewicz
openaire +1 more source