Results 181 to 190 of about 15,647 (243)
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Journal of The Electrochemical Society, 1974
Liquid phase epitaxy by conventional tipping technique has been employed for the growth of high purity epitaxial layers. The layers were grown at 720°‐560°C on (100) and (111) oriented InP substrates. Characteristic surface structures for the substrate orientations as a function of the growth temperature were observed.
K. Hess, N. Stath, K. W. Benz
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Liquid phase epitaxy by conventional tipping technique has been employed for the growth of high purity epitaxial layers. The layers were grown at 720°‐560°C on (100) and (111) oriented InP substrates. Characteristic surface structures for the substrate orientations as a function of the growth temperature were observed.
K. Hess, N. Stath, K. W. Benz
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2004
Liquid phase epitaxy (LPE) is the deposition from a liquid phase (a solution or melt) of a thin single crystalline layer isostructural with the substrate crystal [5.1]. Usually LPE is performed using a solution as the liquid phase, because this is advantageous against the cases when a melt is used.
Marian A. Herman +2 more
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Liquid phase epitaxy (LPE) is the deposition from a liquid phase (a solution or melt) of a thin single crystalline layer isostructural with the substrate crystal [5.1]. Usually LPE is performed using a solution as the liquid phase, because this is advantageous against the cases when a melt is used.
Marian A. Herman +2 more
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Isothermal liquid phase epitaxy
Progress in Crystal Growth and Characterization, 1983Abstract The epitaxial growth of semiconductor solid solutions from a liquid phase appears to be possible under stringent isothermal conditions. The driving force of such epitaxy can be liquid phase supersaturation caused by isothermal mixing of liquidus solutions or supersaturation in the solid phase resulting from thermodynamic nonequilibrium of ...
V.N. Lozovskii +2 more
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Applied Physics A Solids and Surfaces, 1991
This paper presents a comprehensive review of the method of liquid phase epitaxy (LPE) of semiconductors. In Sect. 1 the physical principles including diffusion-limited growth and solid-liquid phase diagrams are treated in detail. In Sect. 2 technological aspects and various kind of growth systems including industrial versions are described.
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This paper presents a comprehensive review of the method of liquid phase epitaxy (LPE) of semiconductors. In Sect. 1 the physical principles including diffusion-limited growth and solid-liquid phase diagrams are treated in detail. In Sect. 2 technological aspects and various kind of growth systems including industrial versions are described.
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Liquid phase epitaxy of AlGaInSb
Journal of Crystal Growth, 1985Abstract Epitaxial growth of the AlGaInSb pseudo-ternary on GaAs, GaSb and InSb substrates was investigated. The LPE growth was performed using In- and Ga-rich melts and different growth parameters such as cooling rate, supercooling, etc. The heteroepitaxial systems were evaluated by several methods; the growth morphologies and layer thickness were ...
E. Lendvay +5 more
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A device for liquid-phase epitaxy
Instruments and Experimental Techniques, 2010An improved slider-type graphite cassette for liquid phase epitaxy in a horizontal reactor is described. The cassette ensures the complete removal of the remains of the solution-melt from the surface of an epitaxial layer owing to precise adjustment of the gap height between the layer surface and the edge of the lower surface of the cassette stator ...
Sh. O. Eminov, A. A. Radjabli
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Journal of Crystal Growth, 1997
In the course of producing waveguides for laser applications, liquid phase epitaxy has been used to grow thin films of LiY1 − x − yLnxGdyF4 (Ln = Nd or Er) on LiYF4 substrates. Covered by a LiYF4 cladding layer, waveguides of low optical loss (< 0.3 dB/cm) were obtained.
P. Rogin, J. Hulliger
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In the course of producing waveguides for laser applications, liquid phase epitaxy has been used to grow thin films of LiY1 − x − yLnxGdyF4 (Ln = Nd or Er) on LiYF4 substrates. Covered by a LiYF4 cladding layer, waveguides of low optical loss (< 0.3 dB/cm) were obtained.
P. Rogin, J. Hulliger
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A two‐scale model for liquid‐phase epitaxy
Mathematical Methods in the Applied Sciences, 2008AbstractWe study a model for liquid‐phase epitaxy that is based on a continuum description of the transport processes in the liquid and a Burton–Cabrera–Frank (BCF) model for the growth of the solid by epitaxy. In order to develop a model that is capable to incorporate structures of a very small scale in the solid phase within a computation for a ...
Eck, Ch., Emmerich, H.
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Epitaxial lateral overgrowth of InP by liquid phase epitaxy
Journal of Crystal Growth, 1995Abstract Epitaxial lateral overgrowth (ELO) of InP has been conducted for the first time by liquid phase epitaxy (LPE). The overgrowth has been studied for seeds in SiO 2 of 2.5 to 7 μm width using starlike and parallel patterns. A wide and flat ELO layer was grown on (001) and (111)B oriented substrates at growth temperature between 773 and 873 K ...
S. Naritsuka, T. Nishinaga
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LIQUID PHASE EPITAXY OF MAGNETIC GARNETS
Journal of Crystal Growth, 1975Abstract In designing rare earth iron garnet compositions for magnetic bubble applications it is usually necessary to deal with no fewer than three cations and often as many as six. LPE has become the dominant process for making garnet films from PbO-B 2 O 3 -Fe 2 O 3 fluxed melts.
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