Results 1 to 10 of about 13,659 (165)
Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation [PDF]
Scientific Reports, 2022 SiC bipolar degradation, which is caused by stacking fault expansion from basal plane dislocations in a SiC epitaxial layer or near the interface between the epitaxial layer and the substrate, is one of the critical problems inhibiting widespread usage ...
Shunta Harada +3 more
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Applied Sciences, 2020 The split gate resurf stepped oxide with highly doped epitaxial layer (HDSGRSO) UMOSFET has been proposed. The epitaxial layer of HDSGRSO u-shape metal oxide semiconductor field effect transistor (UMOSFET) has been divided into three parts: the upper ...
Runze Chen +4 more
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Effect of epitaxial layer thickness on the electrical properties of Ti/n-AlGaAs grown by MBE
Results in Physics, 2016 The effect of epitaxial layer thickness on electrical characteristics of two Ti/n-Al0.33Ga0.67As Schottky barrier diodes was studied in the temperature range of 300–420 K.
N.A. Al-Ahmadi, H.A. Al-Jawhari
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Layer-by-layer epitaxy of multi-layer MoS2 wafers
National Science Review, 2022 Abstract The 2D semiconductor of MoS2 has great potential for advanced electronics technologies beyond silicon. So far, high-quality monolayer MoS2 wafers have been available and various demonstrations from individual transistors to integrated circuits have also been shown.
Wang, Qinqin +22 more
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Crystals, 2022 Wafer-scale on-axis 4H-SiC epitaxial layers with very low roughness were obtained in this study. By performing carbon-rich hydrogen etching and epitaxial growth of the epitaxial layer at different temperatures, local mirror regions (LMRs) with root mean ...
Jiulong Wang +6 more
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Layer-by-Layer Epitaxial Growth of Scalable WSe2 on Sapphire by Molecular Beam Epitaxy [PDF]
Nano Letters, 2017 Molecular-beam epitaxy (MBE) provides a simple but powerful way to synthesize large-area high-quality thin films and heterostructures of a wide variety of materials including accomplished group III-V and II-VI semiconductors as well as newly-developing oxides and chalcogenides, leading to major discoveries in condensed-matter physics.
Masaki Nakano +4 more
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Materials Research Express, 2021 The non-polar a -AlGaN epitaxial film was successfully grown on the semi-polar r- sapphire substrate by metal-organic chemical vapor deposition technique.
Abbas Nasir +5 more
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Magnetic anisotropy and Dzyaloshinskii–Moriya interaction of Pd/Co/Ta thin films
St. Petersburg Polytechnical University Journal: Physics and Mathematics, 2022 In this work, we experimentally studied the structure and magnetic properties of epitaxially grown ultrathin Pd/Co/Ta films. We have studied the effect of Ta on the structural and magnetic properties of Pd/Co epitaxial films. The deposition of a Ta layer
Kuznetsova Mariya +6 more
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Journal of Materials Research and Technology, 2023 The effects of process parameters on the microstructures and properties of the laser-assisted epitaxial growth layer are of great significance for the repair of nickel-based single-crystal blades. This work investigated the microstructures and properties
Jinjun Xu +7 more
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Depth Profiling of Ion-Implanted 4H–SiC Using Confocal Raman Spectroscopy
Crystals, 2020 For silicon carbide (SiC) processed by ion-implantation, dedicated test structure fabrication or destructive sample processing on test wafers are usually required to obtain depth profiles of electrical characteristics such as carrier concentration.
Ying Song +6 more
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