Results 41 to 50 of about 28,001 (312)

Current Transport Behaviour of Au/n-GaAs Schottky Diodes Grown on Ge Substrate With Different Epitaxial Layer Thickness Over a Wide Temperature Range [PDF]

Журнал нано- та електронної фізики, 2011
The work presents temperature dependent forward and reverse current-voltage (I-V) analyses of n-GaAs/Au Schottky Diodes grown on n+ Ge substrate with different epitaxial layer thicknesses.
N. Padha, R. Sachdeva, R. Sihotra, S.B. Krupanidhi   +3 more
doaj  

Epitaxial GaN using Ga(NMe2)3 and NH3 Plasma by Atomic Layer Deposition

, 2020
Low temperature deposition of high-quality epitaxial GaN is crucial for its integration inelectronic applications. Chemical vapor deposition at approximately 800 °C using SiC with anAlN buffer layer or nitridized sapphire as substrates is used to ...
Chih-Wei, Hsu, Erik, Martinsson, Nathan J, O\u27Brien, Justinas, Palisaitis, Ivan, Martinovic, Sydney C., Buttera, Polla, Rouf, Henrik, Pedersen, Babak, Bakhit   +8 more
core   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Advanced Epitaxial Lift‐Off and Transfer Procedure for the Fabrication of High‐Quality Functional Oxide Membranes

Advanced Materials Interfaces, 2023
In the past 5 years, the transfer of epitaxial oxide thin films has drawn a renewed interest in the scientific community. The major challenge in this technology is to minimize the appearance of extended bulk defects such as plastic deformations, cracks ...
Jordan Bouaziz, Claudia Cancellieri, Bastian Rheingans, Lars P. H. Jeurgens, Fabio La Mattina   +4 more
doaj   +1 more source

Hexacoordinated Gallium(III) Triazenide Precursor for Epitaxial Gallium Nitride by Atomic Layer Deposition

, 2020
Gallium nitride (GaN) is the main component of modern-day high electron mobility transistor electronic devices due to its favorable electronic properties.
Chih-Wei, Hsu, Vadim, Kessler, Karl, Rönnby, Justinas, Palisaitis, Rouzbeh, Samii, Lars, Ojamäe, Ivan, Martinovic, Nathan, O\u27Brien, Sydney, Buttera, Polla, Rouf, Henrik, Pedersen, Babak, Bakhit   +11 more
core   +1 more source

Layer-by-layer epitaxial thin films of the pyrochlore Tb2Ti2O7 [PDF]

, 2016
Layer-by-layer epitaxial growth of the pyrochlore magnet Tb2Ti2O7 on the isostructural substrate Y2Ti2O7 results in high-quality single crystal films of up to 60 nm thickness.
Bramwell, ST, Bovo, L, Prabhakaran, D, Rouleau, CM, Prabhakaran, Dharmalingam   +4 more
core   +1 more source

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

Advanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben, Nicolas Gauquelin, Arno Annys, Zhaoliang Liao, Jo Verbeeck, Guus Rijnders, Gertjan Koster   +6 more
wiley   +1 more source

Thermophysics Simulation of Laser Recrystallization of High-Ge-Content SiGe on Si Substrate

Advances in Condensed Matter Physics, 2018
The high-Ge-content SiGe material on the Si substrate can be applied not only to electronic devices but also to optical devices and is one of the focuses of research and development in the field.
Chao Zhang, Jianjun Song, Jie Zhang, Shulin Liu   +3 more
doaj   +1 more source

Observation of metallic electronic structure in a single-atomic-layer oxide

Nature Communications, 2021
Transition metal oxides exhibit a variety of correlated phases in their bulk form; however, they typically become insulators in the monolayer limit.
Byungmin Sohn, Jeong Rae Kim, Choong H. Kim, Sangmin Lee, Sungsoo Hahn, Younsik Kim, Soonsang Huh, Donghan Kim, Youngdo Kim, Wonshik Kyung, Minsoo Kim, Miyoung Kim, Tae Won Noh, Changyoung Kim   +13 more
doaj   +1 more source

Solution chemistry quasi-epitaxial growth of atomic CaTiO3 perovskite layers to stabilize and passivate TiO2 photoelectrodes for efficient water splitting

Fundamental Research, 2023
Perovskite oxides with unique crystal structures and high defect tolerance are promising as atomic surface passivation layers for photoelectrodes for efficient and stable water splitting.
Ning Wei, Yuetian Chen, Xingtao Wang, Miao Kan, Taiyang Zhang, Yixin Zhao   +5 more
doaj   +1 more source