Layered Epitaxial Growth of 3C/4H Silicon Carbide Confined by Surface Micro-Nano Steps
Crystals, 2023 In this study, we used a horizontal hot-wall CVD epitaxy apparatus to grow epitaxial layers on 4° off-axis 4H-SiC substrates. Epitaxial films were grown by adjusting the flow rate of the source gas at different levels.
Ning Guo +7 more
doaj +1 more source
Structural defects in MOVPE grown CdTe/GaAs [PDF]
, 1995 This work presents a study of the character and distribution of structural defects in (00l)CdTe buffer layers grown on GaAs substrates by metal organic vapour phase epitaxy (MOVPE).
Port, R.I., Port, Ruth Isabel
core
Epitaxial Layer Misorientation in CdTe on GaAs‡
, 1990 X-ray diffraction has been used to characterize the relative misorientation of [001] and [111] CdTe layers grown by hot-wall epitaxy on GaAs substrates.
R. Korenstein +2 more
core +1 more source
Dislocation evolution in epitaxial multilayers and graded composition buffers [PDF]
, 2001 This paper presents models to describe the dislocation dynamics of strain relaxation in an epitaxial uniform layer, epitaxial multilayers and graded composition buffers.
Chua SJ +3 more
core +1 more source
Glissile Interphase Boundaries Enable Collective Phase Switching in Epitaxial Polar Oxides
Advanced Functional Materials, EarlyView.A triple point is identified in the phase diagram of low‐symmetry epitaxial BiFeO3 thin film along with an extended regime of phase competition associated with a flattened energy landscape. The electromechanical response is shown to be governed by correlated interphase‐boundary motion, including scale‐free avalanche dynamics characteristic of systems ...
Mohammad Moein Seyfouri +11 more
wiley +1 more source
Forming a thick layer of ε-Ga2O3 on the GaN sublayer with V-defects at the interface
Научно-технический вестник информационных технологий, механики и оптикиThis report presents the results of an experiment to obtain and characterization of quasi-bulk monocrystal epitaxial ε-Ga2O3/GaN heterostructures which contain V-defects at the interface.
A. Yu. Ivanov +5 more
doaj +1 more source
Novel 1064 nm DBR lasers combining active layer removal and surface gratings
Electronics Letters, 2021 The fabrication and characterisation details of novel distributed Bragg reflector (DBR) diode lasers emitting around 1064 nm are presented here. The AlGaAs epitaxial layer stack used here allows the removal of the active quantum wells in passive sections
O. Brox +8 more
doaj +1 more source
TEM and XRD characterizations of epitaxial silicon layer fabricated on double layer porous silicon
, 2016 International audienceSingle crystal Silicon (Si) layers have been deposited by molecular beam epitaxy on double-layer porous silicon (PSi). We show that a top thin layer with a low porosity is used as a seed layer for epitaxial growth.
Gouder, Soraya +7 more
core +1 more source
Layer-by-Layer Growth of AA-Stacking MoS2 for Tunable Broadband Phototransistors
, 2021 The stacking configuration has been considered as an important additional degree of freedom to tune the physical property of layered materials, such as superconductivity and interlayer excitons.
Mingdong Dong +7 more
core +1 more source
Ultrasmall High‐Entropy Materials: Nanoscale Effects, Synthesis, and Mechanistic Insights
Advanced Functional Materials, EarlyView.This review article focuses on sub‐10 nm high‐entropy materials that combine nanoscale design with complex compositions for next‐generation applications. ABSTRACT Ultrasmall high‐entropy nanomaterials (USHENMs, <10 nm) merge multicomponent chemistry with size‐dependent effects, forming a distinct class of materials with unprecedented properties.
Yueyue He +5 more
wiley +1 more source