Results 81 to 90 of about 28,001 (312)

Epitaxial ZnO piezoelectric layer on SiO2/Mo solidly mounted resonator fabricated using epitaxial Au sacrificial layer

Applied Physics Express
In solidly mounted resonator (SMR) type of bulk acoustic wave resonator, it is difficult to fabricate single crystalline piezoelectric thin films in a bottom-up process due to the amorphous SiO _2 in the low acoustic impedance layer of the acoustic Bragg
Satoshi Tokai, Takahiko Yanagitani
doaj   +1 more source

Spin and Charge Control of Topological End States in Chiral Graphene Nanoribbons on a 2D Ferromagnet

Advanced Materials, EarlyView.
Chiral graphene nanoribbons on a ferromagnetic gadolinium‐gold surface alloy display tunable spin and charge states at their termini. Atomic work function variations and exchange fields enabe transitions between singlet, doublet, and triplet configurations.
Leonard Edens, Francisco Romero‐Lara, Trisha Sai, Kalyan Biswas, Manuel Vilas‐Varela, Thomas Frederiksen, Diego Peña, Fabian Schulz, Jose Ignacio Pascual   +8 more
wiley   +1 more source

Optimizing the chemical vapor deposition process of 4H–SiC epitaxial layer growth with machine-learning-assisted multiphysics simulations

Case Studies in Thermal Engineering
This work addresses a novel technique for selecting the best process parameters for the 4H–SiC epitaxial layer in a horizontal hot-wall chemical vapor reactor using a transient multi-physical (thermal-fluid-chemical) simulation model and combined with a ...
Zhuorui Tang, Shibo Zhao, Jian Li, Yuanhui Zuo, Jing Tian, Hongyu Tang, Jiajie Fan, Guoqi Zhang   +7 more
doaj   +1 more source

Resolving the Structural Duality of Graphene Grain Boundaries

Advanced Materials, EarlyView.
Cantilever ncAFM resolves the atomic structure of grain boundaries in graphene, revealing coexisting stable and metastable types. Both contain pentagon/heptagon defects, but metastable GBs show irregular geometries. Modeling shows metastable GBs form under compression, exhibiting vertical corrugation, while stable GBs are flat.
Haojie Guo, Emiliano Ventura‐Macías, Mariano D. Jiménez‐Sánchez, Nicoleta Nicoara, Pierre Mallet, Jean‐Yves Veuillen, Vincent T. Renard, Antonio J. Martínez‐Galera, Pablo Pou, Julio Gómez‐Herrero, Rubén Pérez, Iván Brihuega   +11 more
wiley   +1 more source

Epitaxial Al2O3 capacitors for low microwave loss superconducting quantum circuits

APL Materials, 2013
We have characterized the microwave loss of high-Q parallel plate capacitors fabricated from thin-film Al/Al2O3/Re heterostructures on (0001) Al2O3 substrates.
K.-H. Cho, U. Patel, J. Podkaminer, Y. Gao, C. M. Folkman, C. W. Bark, S. Lee, Y. Zhang, X. Q. Pan, R. McDermott, C. B. Eom   +10 more
doaj   +1 more source

Characterization of the Electrical Properties of a Double Heterostructure GaN/AlGaN Epitaxial Layer with an AlGaN Interlayer

, 2021
This paper proposes a double-heterostructure (DH) GaN/AlGaN epitaxial layer that contains an AlGaN interlayer. The electrical properties are characterized and compared with conventional single-heterostructure (SH) GaN/AlGaN epitaxial layers.
Jiang, Zhuangde, Mao, Qi, Dong, Tao, Jing, Weixuan, Meng, Qingzhi, Zhao, Libo, Lin, Qijing, Fang, Xudong   +7 more
core   +1 more source

Crystal Growth Engineering for Dendrite‐Free Zinc Metal Plating

Advanced Materials, EarlyView.
This research employed the rare‐earth ion dysprosium (Dy) to modulate aqueous zinc (Zn) metal plating. Integrated multiscale experiments and computational modeling unveiled the preferential adsorption of Dy on specific crystal facets, which activated screw dislocation‐driven Zn growth.
Guifang Zeng, Sharona Horta, Qing Sun, Malik Dilshad Khan, Maria Ibáñez, Yuhang Han, Shang Wang, Longqiu Li, Lijie Ci, Yanhong Tian, Andreu Cabot   +10 more
wiley   +1 more source

Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics

Advanced Materials, EarlyView.
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades, Pedro Hidalgo, David Maestre, Ruth Martínez‐Casado, Emilio Nogales, Beatriz Rodríguez, G. Cristian Vásquez, Bianchi Méndez   +7 more
wiley   +1 more source

GaAs Epitaxial Microrelief Layer [PDF]

, 2011
It is a report about an epitaxial GaAs relief layer with 3 μ of thickness growth in Ga –AsCl3 – H2 system on n-GaAs (n=2x1018cm-3) substrate with multiple crystallization centers. Crystalline lattice on substrate surface is crystallographic disorientated
SUMAN, Victor, CINIC, Boris, ENACHI, Mihail, GORCEAC, Leonid, BARANOV, Simion   +4 more
core  

Materials Integrations for High-Performance Photovoltaics by Wafer Bonding [PDF]

, 2005
The fundamental efficiency limit for state of the art triple-junction photovoltaic devices is being approached. By allowing integration of non-lattice-matched materials in monolithic structures, wafer bonding enables novel photovoltaic devices that have ...
Zahler, James Michael
core   +1 more source