Results 91 to 100 of about 28,001 (312)
Flexoelectrically Induced Polar Topology in Twisted SrTiO3 Membranes
Advanced Materials, EarlyView.Twisted SrTiO3 bilayers host polar vortices of flexoelectric origin, revealed through combined experiment and theory. By reconstructing polarization from the toroidal moment of strain gradients, the work establishes a 3D chiral state with broken inversion and mirror symmetries.
Isabel Tenreiro +13 more
wiley +1 more source
Investigation on the Effect of Annealing Temperature on the Side Ohmic Contact Characteristics for Double Channel GaN/AlGaN Epitaxial Layer. [PDF]
Micromachines (Basel), 2022 Meng Q +5 more
europepmc +1 more source
, 2009 Among the III-V binary semiconductors, Gallium Antimonide (GaSb) has attracted considerable attention. Many of its interesting properties are directly associated with its very low effective electron mass and high mobility.
나강영
core
Role of the Recombination Zone in Organic Light‐Emitting Devices
Advanced Materials, EarlyView.This review summarizes the critical role of the recombination zone in organic light‐emitting diodes (OLEDs). We highlight that broadening the recombination zone in OLEDs based on emissive layers with balanced charge transport and high photoluminescence quantum yields provides a promising route toward achieving both long operational lifetime and high ...
Yungui Li, Karl Leo
wiley +1 more source
P-type Inversion at the Surface of β-Ga2O3 Epitaxial Layer Modified with Au Nanoparticles. [PDF]
Sensors (Basel), 2022 Krawczyk M +5 more
europepmc +1 more source
, 1997 A dissociated screw dislocation parallel to the interface was found in the epitaxial layer of the Ge0.17Si0.83 Si(001) system. It is shown that this dissociated screw dislocation which consists of two 30 degrees partials can relieve misfit strain energy,
Wan XY +4 more
core
Epitaxial two-layer graphene under pressure: Diamene stiffer than Diamond
, 2018 International audienceThe unprecedented ultrahigh interlayer stiffness of supported two-layer epitaxial graphene on silicon carbide (SiC) has been recently reported by our research group.
Bongiorno, Angelo +14 more
core +1 more source
Advanced Materials, EarlyView.Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam +6 more
wiley +1 more source
Lattice‐Matched 2D Template Enables Efficient Cesium Tin Halide Perovskite Solar Cells
Advanced Materials, EarlyView.Lattice‐matched 2D perovskite PEA2CsSn2I7 templates the out‐of‐plane growth of inorganic 3D γ‐CsSnI3 along the (110) plane, forming highly oriented 2D/3D tin halide perovskite heterostructures. With reduced trap states and mitigated δ‐phase impurities, the CsSnI3‐based solar cells achieve a power conversion efficiency of 15.27% and maintain stable ...
Hongzhe Anna Xu +15 more
wiley +1 more source
Research on silicon carbide epitaxial equipment technology
机车电传动, 2023 Chemical vapor deposition equipment is used for homogeneous epitaxial growth on N-type 4H-SiC substrate. The film quality of epitaxial growth depends on the temperature field and air-flow field of epitaxial growth equipment. In this paper, the horizontal
YUAN Fushun +3 more
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