Results 101 to 110 of about 28,001 (312)

Epitaxial SiC grown on silicon-on-insulator substrate with ultra-thin silicon-over-layer

, 2005
We report on the comparative studies of epitaxial SiC films grown on silicon-on-insulator (SOI) and Si bulk substrates. The silicon-over-layer (SOL) on the SOI has been thinned down to different thicknesses, with the thinnest about 10 nm.
Zhao WS, Bian EL, Zeng YP, Sun GS, Huang, FY, Chinese Acad Sci, Inst Semicond, 35 E Qinghua Rd, Beijing 100083, Peoples R China. 电子邮箱地址: fyhuang@seu.edu.cn, Huang FY, Wang XF   +6 more
core  

Numerical Analysis of GaAs Epitaxial-Layer Schottky Diodes

, 1987
A computer simulation of GaAs epitaxial-layer Schottky-barrier diodes has been carried out. The present work extends previous drift-diffusion equation (DDE) Schottky-barrier diode simulations to very thin epilayers of GaAs as well as to higher forward ...
Adams, Jack, Navon, D.H., Jalenski, A., Tang, Ting-Wei   +3 more
core   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Ferromagnetism of Molecular Beam Epitaxy‐grown Ultra‐thin Cr2Ge2Te6 Films Down to the Monolayer Limit on Si Substrates

Advanced Materials, EarlyView.
Uniform monolayer Cr2Ge2Te6 films are achieved on Si substrates by molecular beam epitaxy. Intrinsic ferromagnetism with perpendicular magnetic anisotropy is established in the films by anomalous Hall effect and superconducting quantum interference device measurements, albeit with strong magnetic fluctuations characteristic of its 2D nature.
Pengfei Ji, Ruixuan Liu, Tianchen Zhu, Yang Chen, Yitian Tong, Jinxuan Liang, Yunhe Bai, Yunyi Zang, Zuhan Geng, Fangting Chen, Xiyu Hong, Jiatong Zhang, Luyi Yang, Qi‐Kun Xue, Ke He, Xiao Feng   +15 more
wiley   +1 more source

Influence of Growth Process on Suppression of Surface Morphological Defects in 4H-SiC Homoepitaxial Layers

Micromachines
To address surface morphological defects that have a destructive effect on the epitaxial wafer from the aspect of 4H-SiC epitaxial growth, this study thoroughly examined many key factors that affect the density of defects in 4H-SiC epitaxial wafer ...
Yicheng Pei, Weilong Yuan, Yunkai Li, Ning Guo, Xiuhai Zhang, Xingfang Liu   +5 more
doaj   +1 more source

Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlxGa1−xN Buffer Layer

Sensors, 2017
The UV-to-visible rejection ratio is one of the important figure of merits of GaN-based UV photodetectors. For cost-effectiveness and large-scale fabrication of GaN devices, we tried to grow a GaN epitaxial layer on silicon substrate with complicated ...
Chang-Ju Lee, Chul-Ho Won, Jung-Hee Lee, Sung-Ho Hahm, Hongsik Park   +4 more
doaj   +1 more source

Graphene nanoribbons with zigzag and armchair edges prepared by scanning tunneling microscope lithography on gold substrates

, 2014
The properties of graphene nanoribbons are dependent on both the nanoribbon width and the crystallographic orientation of the edges. Scanning tunneling microscope lithography is a method which is able to create graphene nanoribbons with well defined edge
Dobrik, G., Jin, X., Magda, G. Zs., Hwang, C., Osváth, Z., Nemes Incze, Péter, Biró, L. P., Tapasztó, Levente   +7 more
core   +1 more source

Recent Progress in the Phase‐Controlled Synthesis of Ruthenium Nanocrystals for Catalytic Applications

Advanced Materials, EarlyView.
Template effect and kinetic control enable crystal‐phase engineering of Ru nanocrystals, granting access to either metastable fcc‐Ru or stable hcp‐Ru with distinct surface structures, thermal stabilities, and catalytic behaviors. Moreover, the hcp‐Ru can further serve as an epitaxial template to direct Pd and Rh nanocrystals into the metastable hcp ...
Jianlong He, Zhiqi Wang, Jiaqi Guan, Younan Xia   +3 more
wiley   +1 more source

High-k perovskite gate oxide BaHfO3

APL Materials, 2017
We have investigated epitaxial BaHfO3 as a high-k perovskite dielectric. From x-ray diffraction measurement, we confirmed the epitaxial growth of BaHfO3 on BaSnO3 and MgO.
Young Mo Kim, Chulkwon Park, Taewoo Ha, Useong Kim, Namwook Kim, Juyeon Shin, Youjung Kim, Jaejun Yu, Jae Hoon Kim, Kookrin Char   +9 more
doaj   +1 more source

Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities

Advanced Materials, EarlyView.
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen, Zhanxi Fan, Jingjie Ge, Qiyuan He, Zhuangchai Lai, Jiawei Liu, Chaoliang Tan, Hua Zhang   +7 more
wiley   +1 more source