Results 121 to 130 of about 28,001 (312)

Investigation of Free Exciton Properties in GaAs Epitaxial Layer

, 1995
The transition energy, the binding energy, the intensity, the broadening and the lifetime of the free-exciton transitions in GaAs epitaxial layer have well been investigated using photoconductivity measurement which is analyzed in term of an improved ...
Shi Yi, Cosmo Carlone, Martin Parenteau, Wu Fengmei, Zheng Youdou, Anouar Jorio   +5 more
core   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source

Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices. [PDF]

Micromachines (Basel), 2020
Mandal KC, Kleppinger JW, Chaudhuri SK.
europepmc   +1 more source

Effect of dual buffer layer structure on the epitaxial growth of AlN on sapphire

, 2012
A dual AlN buffer layer structure, including an isolated layer and a nucleation layer, is proposed to improve the growth of AlN films on sapphire substrate by metal organic chemical vapor deposition.
D.G. Zhao, Li, L, P. Chen, H. Yang(杨辉), Z.S. Liu, Zhao, D.G, L.L. Wu, H. Wang（王辉）, D.S. Jiang, Zhang, S.M, S.M. Zhang(张书明), Jiang, D.S, Wang, H, L.C. Le, Chen, P, Wu, L.L, Liu, Z.S, Le, L.C, J.J. Zhu(朱建军), Yang, H, Zhu, J.J, L. Li   +21 more
core  

Atomic Layer Deposition of Metallic Molybdenum Dioxide Thin Films Enabling High‐k Rutile Capacitors

Advanced Materials Interfaces, EarlyView.
The first direct atomic layer deposition (ALD) process of molybdenum dioxide (MoO2) thin films is reported using molybdenum(II) acetate dimer (Mo2(OAc)4) and oxygen (O2) as precursors at 235°C–275°C. The films are crystalline, exceptionally pure, and conductive.
Alexey Ganzhinov, Miika Mattinen, Marko Vehkamäki, Kenichiro Mizohata, Mykhailo Chundak, Georgi Popov, Paavo Porri, Mikko Ritala, Matti Putkonen   +8 more
wiley   +1 more source

Reverse graded high content (x>0.75) Si1-xGex virtual substrates [PDF]

Silicon germanium alloy layers can be grown epitaxially on a silicon substrate to provide a means of adjusting the lattice parameter of the crystal. Such a platform, known as a virtual substrate, has a number of potential applications.
Shah, V. A.
core  

Interface‐Engineered Binary Framework Composites: Advancing Porous Materials for Precision Medicine

Advanced Materials Interfaces, EarlyView.
Binary framework composites integrate two complementary porous architectures into a unified platform, enabling multifunctional design, enhanced structural tunability, and improved physicochemical performance. By combining high surface area, ordered porosity, interfacial synergy, and versatile functionalization, these hybrid materials offer new ...
Navid Rabiee, Mohammad Rabiee, Mohammad Akrami‐Hasan‐Kohal, Sidi A. Bencherif   +3 more
wiley   +1 more source

Deep-Learning Based Depth-Tracking of Stacking-Faults in Epitaxially Grown Silicon Wafers

SiliconPV Conference Proceedings
Stacking faults in epitaxial silicon wafers are structural defects that can reduce the recombination lifetime of the final solar cells significantly.
Theresa Trötschler, Saed Al-Hajjawi, Siddharth Raghavendran, Jonas Haunschild, Matthias Demant, Stefan Rein   +5 more
doaj   +1 more source

Anomalous Properties of the Dislocation-Free Interface between Si(111) Substrate and 3C-SiC(111) Epitaxial Layer. [PDF]

Materials (Basel), 2020
Kukushkin SA, Osipov AV.
europepmc   +1 more source

Van der Waals Chromium Telluride Thin Films Prepared by Hybrid Pulsed Laser Deposition With Tunable Magnetism

Advanced Materials Interfaces, EarlyView.
Epitaxial Cr(1+δ)Te2 thin films were synthesized via hybrid Pulsed Laser Deposition (PLD) that combined Molecular Beam Epitaxy (MBE) techniques with PLD. Control of the Cr intercalation, δ, enabled modulation of magnetic anisotropy, Curie temperature, and transport properties.
Pia Henning, Anna Tschesche, Tobias Meyer, Jasnamol Palakkal   +3 more
wiley   +1 more source