Results 141 to 150 of about 28,001 (312)
Flexible silicon carbide (SiC) microelectrode arrays enable high‐fidelity, multichannel cell extracellular recording and precise localized ablation. SiC has been extensively evaluated to persist long‐term in chronic physiological conditions while remaining robust, with excellent electrical and electrochemical stability.
Minh Anh Huynh +4 more
wiley +1 more source
Epitaxial integration of perovskite based double-gate field effect transistor with silicon
Silicon-based semiconductors have driven significant advancements following Moore’s law but are now approaching the physical limits. To overcome these challenges, integrating new materials with silicon is emerging as a promising alternative. In this work,
Seonghyeon Kim +6 more
doaj +1 more source
Characterization of Semiconductor Epitaxial Layer Interfaces by Persistent Photoconductivity
The impurity concentration and the carrier mobility are determined as functions of depth within semiconductor epitaxial layer interfaces by persistent photoconductivity (PP) measurements.
Anagnostakis, E.A.
core
We demonstrate a novel epitaxial layer-by-layer growth on upconverting NaYF4 nanocrystals (NCs) utilizing Ostwald ripening dynamics tunable both in thickness and composition.
Andreas Korinek (1940188) +3 more
core +1 more source
A 2×2 multiplexed GaAsSb nanowire photodetector array integrated with L‐shaped metasurfaces is developed for miniaturized infrared polarimetry. Leveraging non‐radiating anapole states that facilitate near‐field enhancement, the device demonstrates strong polarization selectivity at 835 nm.
Longsibo Huang +14 more
wiley +1 more source
(001) β-Ga2O3 epitaxial layer grown with in-situ pulsed Al atom assisted method by MOCVD
In this paper, to overcome the issues of high roughness and defect density in (001) β-Ga2O3 epitaxial films grown by MOCVD, a novel in-situ pulsed Al atom assisted growth method is proposed.
Yunlong He +8 more
doaj +1 more source
Layer transfer technique of epitaxial rutile TiO2 thin films for photonic applications
International audienceLayer transfer technique of epitaxial (00l) oriented rutile TiO2 films sputtered on sapphire substrates using epitaxial ZnO sacrificial layer was developed.
Bargiel, Sylwester +4 more
core +1 more source
A sidewall‐integrated oxide–metal–oxide architecture is demonstrated to overcome efficiency degradation in ultra‐small InGaN/GaN micro‐LEDs. Conformal Al2O3 passivation combined with plasmonic Ag nanoparticles enables localized surface plasmon–exciton coupling, converting surface‐related nonradiative losses into radiative emission.
Pil‐Kyu Jang +17 more
wiley +1 more source
This review comprehensively summarizes the atomic defects in TMDs for their applications in sustainable energy storage devices, along with the latest progress in ML methodologies for high‐throughput TEM data analysis, offering insights on how ML‐empowered microscopy facilitates bridging structure–property correlation and inspires knowledge for precise ...
Zheng Luo +6 more
wiley +1 more source
Magnetoconductivity and Terahertz Response of a HgCdTe Epitaxial Layer. [PDF]
Yavorskiy D +9 more
europepmc +1 more source

