Advanced Science, EarlyView.Based on orbital magnetic moment control, a material design strategy is proposed for a giant converse magnetoelectric effect in multiferroic heterostructures. This study will pioneer a promising route toward low‐power spintronic devices with an electric field.
Takamasa Usami +5 more
wiley +1 more source
High-Performance nMOSFETs Using a Novel Strained Si/SiGe CMOS Architecture
, 2003 Performance enhancements of up to 170% in drain current, maximum transconductance, and field-effect mobility are presented for nMOSFETs fabricated with strained-Si channels compared with identically processed bulk Si MOSFETs.
Waite, A.M. +11 more
core
Engineering of Crystal and Domain Structures in Epitaxial Y:HfO2 Thin Films by YSZ Substrate Miscut
Advanced Science, EarlyView.We investigate how YSZ substrate miscut influences crystal structure and domain formation in epitaxial Y‐doped HfO2 thin films. Using magnetron sputtering, high‐resolution X‐ray diffraction, atomic‐resolution scanning transmission electron microscopy, and first‐principles calculations, we systematically examine the characteristics of thickness‐ and ...
Jun Young Lee +12 more
wiley +1 more source
Quantitative Analysis of Piezoresistive Characteristic Based on a P-type 4H-SiC Epitaxial Layer. [PDF]
Micromachines (Basel), 2019 Li Y +8 more
europepmc +1 more source
Blue‐Emitting ZnSe(Te) Quantum Dots and Light‐Emitting Diodes
Advanced Science, EarlyView.. ABSTRACT Zn‐based quantum dots (QDs) have been regarded as the most promising Cd‐free candidates for blue‐emitting applications. ZnSe QDs exhibit an ultra‐narrow full width at half maximum (FWHM), high photoluminescence quantum yield (PLQY), and excellent environmental stability, making them ideal for blue‐violet emitters.
Lijin Wang, Aiwei Tang, Jingbi You
wiley +1 more source
Buried Unstrained Germanium Channels: A Lattice‐Matched Platform for Quantum Technology
Advanced Science, EarlyView.ABSTRACT Strained germanium (ε$\varepsilon$‐Ge) and strained silicon (ε$\varepsilon$‐Si) buried quantum wells have enabled advanced spin‐qubit quantum processors. However, in the absence of suitable lattice‐matched substrates, ε$\varepsilon$‐Ge and ε$\varepsilon$‐Si are deposited on defective, metamorphic SiGe buffers, which may impact device ...
Davide Costa +10 more
wiley +1 more source
Advanced Science, EarlyView.Cu/Ti3C2 heterostructure: Cu/Ti3C2 heterostructure achieves epitaxial stabilization of high‐energy Cu(110) facets through lattice matching and electronic interaction, enabling efficient CO2 electroreduction to acetate with 42.5% Faradaic efficiency at 235 mA·cm−2. ABSTRACT The electrochemical CO2 reduction reaction (CO2RR) to multicarbon (C2+) products
Yan‐An Li +10 more
wiley +1 more source
Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process. [PDF]
Nanoscale Res Lett, 2019 Liu S +10 more
europepmc +1 more source
Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman Analysis. [PDF]
Materials (Basel), 2020 Scuderi V +4 more
europepmc +1 more source
Synaptic κ‐Ga2O3 Photodetectors for Privacy‐Enhancing Neuromorphic Computing
Advanced Science, EarlyView.We report on a single‐element neuromorphic sensor based on the persistent photoconductivity (PPC) of κ‐phase Ga2O3 capable of sensing ultraviolet light and harnessing intrinsic data privacy. The approach establishes a materials‐enabled pathway toward compact, intelligent, and privacy‐enhancing optoelectronic hardware for next‐generation edge systems ...
Yanqing Jia +13 more
wiley +1 more source