Results 131 to 140 of about 28,001 (312)
, 2018 The epitaxial growth of CoSi2 from Co with a Ti capping layer using plasma nitridation-mediated epitaxy (PNME) was demonstrated. By exposing the Si substrate to the NH3 plasma, an a-SiNx layer was formed with atomic scale thickness controllability. After
Kim, H +4 more
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Facet‐Specific PbS Quantum Dot Passivation Using Halide Perovskites for SWIR Photodetectors
Advanced Materials Interfaces, EarlyView.PbS quantum dots (QDs) are emerging as powerful short‐wave infrared photodetectors, yet the passivation mechanism of large QDs by perovskites ‐ critical for their stability ‐ remains unexplained. Here, we unveil the ligand structure of CH3NH3PbI3 (MAPI)‐passivated 4‐nm PbS QDs using FTIR, XPS, SEM, NMR, and DFT.
L. Paillardet +13 more
wiley +1 more source
Schottky barrier inhomogeneities at the interface of different epitaxial layer thicknesses of n-GaAs/Ti/Au/Si: Al0.33Ga0.67As. [PDF]
Heliyon, 2020 Al-Ahmadi NA.
europepmc +1 more source
, 2015 Epitaxial (111) Ba0.5Sr0.5TiO3 (BST) thin films have been grown by pulsed laser deposition on (0001) Al2O3 substrate with ZnO as buffer layer. The x-ray omega-2 theta, Phi-scan and reciprocal space mapping indicate epitaxial nature of BST thin films. The
ANTONY, A +7 more
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Xenes for Sustainable Energy: A Roadmap From First‐Principles Design to Practical Deployment
Advanced Materials Interfaces, EarlyView.Emerging 2D Xenes are advancing from theoretical predictions toward practical energy‐storage and conversion technologies through the integration of first‐principles modelling, experimental synthesis, electrochemical validation, and AI‐assisted materials design, enabling accelerated discovery of high‐performance and sustainable electrochemical systems ...
Onur Karaman, Ceren Karaman
wiley +1 more source
Transmission electron microscopy study of triple-ribbon contrast features in a ZnTe epitaxial layer
, 1998 A transmission electron microscopy study of triple-ribbon contrast features in a ZnTe layer grown epitaxially on a vicinal GaAs (001) substrate is reported. The ribbons go through the layer as threading dislocations near the [](111) or [112]() directions.
Han PD,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China. +1 more
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Reconnaissance Peptide Labeling Grain Boundary of Chemically Grown MoS2 Polycrystalline Monolayer
Advanced Materials Technologies, EarlyView.Self‐assembled peptides on substrates, through adsorption and aggregation, offer an alternative way to label grain boundaries in chemically grown single‐layer polycrystalline MoS2. During an early nucleation step, peptides preferentially bind to grain boundaries.
Linhao Sun, Jinhua Hu
wiley +1 more source
Fabrication of vertical ZnO nanowires on silicon(100) with epitaxial ZnO buffer layer
, 2014 Vertical ZnO nanowires were successfully grown on epitaxial ZnO (002) buffer layer/Si (100) substrate. The nanowire growth process was controlled by surface morphology and orientation of the epitaxial ZnO buffer layer, which was deposited by radio ...
Lee, C.Y. +4 more
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Advanced Materials Technologies, EarlyView.An AlON interfacial layer is engineered within an AlN switching layer to enable transparent RRAM with four stable resistance states. The device achieves low‐voltage multilevel switching and a high HRS, allowing precise grayscale modulation and preventing light leakage in micro‐LEDs operated at VDD = 2.7 V.
Sung Keun Choi +7 more
wiley +1 more source
Epitaxial Growth on Simox Wafers
, 1985 The top silicon layer in as-implanted SIMOX wafer is usually too thin to support device fabrication. Hence, an epitaxial layer is usually grown on a SIMOX wafer after oxygen ion implantation and anneal. Because this epitaxial layer is typically very thin,
Hon Wai Lam
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