Results 111 to 120 of about 28,001 (312)
New Separation Method of Threading Dislocations in 4H-SiC Epitaxial Layer by Molten KOH Etching
, 2011 A new method for the separation of threading screw dislocations (TSD) and threading edge dislocations (TED) in a 4H-SiC epitaxial layer is proposed by measurement of the etch pit angles.
Fujiwara Hirokazu +5 more
core +1 more source
Epitaxial growth of deposited amorphous layer by laser annealing [PDF]
, 1978 We demonstrate that a single short pulse of laser irradiation of appropriate energy is capable of recrystallizing in open air an amorphous Si layer deposited on a (100) single-crystal substrate into an epitaxial layer. The laser pulse annealing technique
M-A. Nicolet +11 more
core +1 more source
Advanced Materials, EarlyView.This review summarizes the principles and challenges of nonaqueous lithium‐oxygen batteries and recent advances in cathode catalysts, including carbon‐based materials, metals, oxides, sulfides, nitrides, carbides, and redox mediators. It highlights emerging design strategies and artificial intelligence‐driven approaches, emphasizing data‐assisted ...
Yuqing Yao +8 more
wiley +1 more source
Advanced Materials, EarlyView.Ultrathin lithium metal anodes (≤15 µm) offer a promising route to high‐energy‐density batteries due to their high capacity and low potential. This review presents design principles for ultrathin Li, evaluates fabrication strategies, and discusses challenges in liquid and solid‐state cells.
Cheng Wang +9 more
wiley +1 more source
Application of Open Circuit Voltage Decay to the Characterization of p/n+ and n/p+ Epitaxial Layer
Advances in Electrical and Electronic Engineering, 2004 High quality silicon epitaxial layers are inevitable in bipolar and/or unipolar technology. However, its properties are not as easy characterized as those of bulk material.
Milan Tapajna +4 more
doaj
Epitaxial liftoff of ZnSe-based heterostructures using a II-VI release layer
, 2005 Epitaxial liftoff is a post-growth process by which the active part of a semiconductor heterostructure, the epitaxial layer, is removed from its original substrate and deposited onto a new substrate.
Bradford, C. +11 more
core +1 more source
Programmable Stepwise Heteroepitaxial Growth of Colloidal Crystals With Different Phases
Advanced Materials, EarlyView.Stepwise heteroepitaxial growth is adapted to colloidal crystal engineering with DNA, enabling face‐centered cubic (fcc) facets to grow on body‐centered cubic (bcc) crystals with 110 facets. This approach tolerates large lattice mismatches, extending heteroepitaxy beyond the limits of conventional atomic systems.
Xiaowei Liu +9 more
wiley +1 more source
750 V Breakdown in GaN Buffer on 200 mm SOI Substrates Using Reverse-Stepped Superlattice Layers
MicromachinesIn this work, we demonstrated the epitaxial growth of a gallium nitride (GaN) buffer structure on 200 mm SOI (silicon-on-insulator) substrates. This epitaxial layer is grown using a reversed stepped superlattice buffer (RSSL), which is composed of two ...
Shuzhen You +11 more
doaj +1 more source
Double magnetic layer formed in epitaxial garnet films by annealing
, 2003 Formation of a second magnetic layer was found in annealed epitaxial magnetic garnet film. The ratio of the layers is controlled by the annealing time. A linear relationship was found between the time of annealing and the thickness of the second layer.
Vértesy, Gábor, Keszei, Béla
core +1 more source
Advanced Materials, EarlyView.This study presents a compact dynamic‐field‐driven nucleation and growth (DFNG) model that captures ferroelectric switching behavior under arbitrary voltage waveforms. It enables extraction of time‐dependent domain wall velocity and growth dimensionality, which can then be extended to device‐level modeling.
Yi Liang +10 more
wiley +1 more source