Results 11 to 20 of about 28,001 (312)
Modeling and Control of Epitaxial Thin Film Growth [PDF]
, 2003 Thin film deposition is a manufacturing process in which tolerances may approach the size of individual atoms. The final film is highly sensitive to the processing conditions, which can be intentionally manipulated to control film properties. A lattice
Gallivan, Martha Anne
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Experimental evidence for epitaxial silicene on diboride thin films [PDF]
, 2012 As the Si counterpart of graphene, silicene may be defined as an at least partially sp^2-hybridized, atom-thick honeycomb layer of Si that possesses π-electronic bands.
Kawai, Hiroyuki +5 more
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Thin Solid Films, 1986 Abstract Molecular layer epitaxy (MLE) of GaAs related compounds and Si with SiO 2 deposition has been developed to realize the tera-hertz operating devices. At sufficiently low process temperature, lower than in the conventional growth method, device quality epitaxial layers were achieved by MLE.
NISHIZAWA, Jun-ichi, KURABAYASHI, Toru
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AIP Advances, 2021 Epitaxial lanthanum fluoride (LaF3) is considered an important and outstanding material for the fabrication of Metal–Insulator–Semiconductor (MIS) capacitive devices.
Md. Hafijur Rahman +3 more
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Deep-level traps in lightly Si-doped n-GaN on free-standing m-oriented GaN substrates
AIP Advances, 2018 In this study, we investigated the deep-level traps in Si-doped GaN epitaxial layers by metal-organic chemical vapor deposition on c-oriented and m-oriented free-standing GaN substrates.
H. Yamada +4 more
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EPJ Photovoltaics, 2013 We have previously reported on the successful deposition of heterojunction solar cells whose thin intrinsic crystalline absorber layer is grown using the standard radio frequency plasma enhanced chemical vapour deposition process at 165 °C on highly ...
Roca i Cabarrocas P. +4 more
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Reduction of phonon resonant terahertz wave absorption in photoconductive switches using epitaxial layer transfer [PDF]
, 2009 A broadband terahertz time-domain spectroscopy (TDS) system for frequencies of up to 15 THz, including the phonon resonance frequency range, has been developed using a transferred thin-film photoconductive switch (PCS) detector. The thin-film PCSs, based
Kasai, S +9 more
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Crystals, 2017 In order to reduce the dislocation density and improve the performance of high indium content In0.82Ga0.18As films, the design of double buffer layers has been introduced into the In0.82Ga0.18As/InP heterostructure.
Liang Zhao +6 more
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Laser transfer of sol-gel ferroelectric thin films using an ITO release layer [PDF]
, 2011 A new laser transfer process is reported which allows damage-free transfer of ferroelectric thin films from a growth substrate directly to a target substrate.
Bansal, A. +15 more
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Journal of Materials Science: Materials in Electronics, 2021 AlN samples have been grown on sapphire substrate using nucleation layers (NLs) having different growth temperatures. The growth temperature of the NL has been varied over a wide range of temperatures highlight the effects on the quality of the AlN epilayer.
Irem Simsek +5 more
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