Results 1 to 10 of about 28,350 (278)
Optical spectroscopy of rare-earth ions doped KY(WO4)2 thin films [PDF]
, 2004 KY(WO4)2 thin films doped with Dy3+, Tb3+, Yb3+, were grown onto KY(WO4)2 substrates using liquid-phase epitaxy. Spectroscopic investigations of the grown layers were performed.
García-Revilla, S. +4 more
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Magnetic Hyperfine Structure of Epitaxial Films of Nickel Ferrite
Фізика і хімія твердого тіла, 2016 Comparative NGR study of the parameters of the magnetic hyperfine structure of epitaxial NiFe2O4 films grown on MgO single-crystal substrates of orientations of (100) and (111) by liquid phase epitaxy (LPE) and chemical transport reactions (CTR) is ...
S. I. Yushchuk +2 more
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Organometallic perovskite single crystals grown on lattice-matched substrate for photodetection
Nano Materials Science, 2020 In this work, we demonstrate that an organometallic perovskite (OP) single crystal for effective photodetection can be grown on a gold (Au)-decorated substrate using liquid phase epitaxy.
Xin Wang +10 more
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Electrical characterization Of SiGe thin films [PDF]
, 1991 An apparatus for measuring electrical resistivity and Hall coefficient on both thin films and bulk material over a temperature range of 300K to 1300K has been built. A unique alumina fixture, with four molybdenum probes, allows arbitrarily shaped samples,
Fleurial, Jean-Pierre, McCormack, J. A.
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Thermodynamics of the Mg-B system: Implications for the deposition of MgB2 thin films
, 2001 We have studied thermodynamics of the Mg-B system with the modeling technique CALPHAD using a computerized optimization procedure. Temperature-composition, pressure-composition, and pressure-temperature phase diagrams under different conditions are ...
Li, Qi +3 more
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High-power, broadly tunable, and low-quantum-defect KGd1-xLux(WO4)2:Yb3+ channel waveguide lasers [PDF]
, 2010 In KGd1-xLux(WO4)2:Yb3+ channel waveguides grown onto KY(WO4)2 substrates by liquid phase epitaxy and microstructured by Ar+ beam etching, we produced 418 mW of continuous-wave output power at 1023 nm with a slope efficiency of 71% and a threshold of 40 ...
Aravazhi, Shanmugam +3 more
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Properties of double p+-InP/n-InGaAsP/n-InP heterojunctions obtained by LPE method [PDF]
Технологія та конструювання в електронній апаратурі, 2012 The double epitaxial p+-InP/n-InGaAsP/n-InP heterostructures with coinciding electrical and metallurgical boundaries has been obtained. Such coincidence is achieved due to growing an additional buffer n-InP layer and decreasing the time for growing an ...
N. M. Vakiv +6 more
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Heterostructures on the basis of GaAs with quantum points of InAs for photo-electric transformers [PDF]
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2008 Heterostructures based on GaAs with InAs quantum dots obtained in the process of liquid-phase epitaxy by the method of pulse cooling of saturated solution in indium or heterostructures containing quantum dots in the area of the p–n-junction were much ...
Maronchuk I. E., Dobrozhanskiy Yu. A.
doaj
Depositing spacing layers on magnetic film with liquid phase epitaxy [PDF]
, 1975 Liquid phase epitaxy spacing layer is compatible with systems which are hard-bubble proofed by use of second magnetic garnet film as capping layer. Composite is superior in that: circuit fabrication time is reduced; adherence is superior; visibility is ...
Moody, J. W. +2 more
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, 2018 The addition of boron to GaAs nanowires grown by self-catalyzed molecular beam epitaxy was found to have a strong effect on the nanowire morphology, with axial growth greatly reduced as the nominal boron concentration was increased. Transmission electron
Andrews, Aaron M. +7 more
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