Mass transfer in liquid-phase epitaxy of two-layer systems [PDF]
A liquid phase epitaxy diffusion model of a two-layer system at instable cooling speed of the solution-melt has been developed. It was discovered that the transition process continues even after the termination of cooling, due to which the layer growth ...
Dranchuk S. M. +2 more
doaj +4 more sources
Structural, Electrical, And Optical Properties Of Inasxsb1-X Epitaxial Films Grown By Liquid-Phase Epitaxy [PDF]
The InAsxSb1-x films were grown on (100) GaSb substrates by liquid-phase epitaxy, and their structural, electrical, and optical properties were investigated.
Gao FB +6 more
core +2 more sources
Graphitic platform for self-catalysed InAs nanowires growth by molecular beam epitaxy [PDF]
We report the self-catalysed growth of InAs nanowires (NWs) on graphite thin films using molecular beam epitaxy via a droplet-assisted technique. Through optimising metal droplets, we obtained vertically aligned InAs NWs with highly uniform diameter ...
Anyebe, Ezekiel A. +33 more
core +1 more source
Liquid-phase explosive crystallization of electron-beam-evaporated a-Si films induced by flash lamp annealing [PDF]
We succeed in the formation of micrometer-order-thick polycrystalline silicon (poly-Si) films through the flash-lamp-induced liquid-phase explosive crystallization (EC) of precursor a-Si films prepared by electron-beam (EB) evaporation.
Matsumura, Hideki, Ohdaira, Keisuke
core +1 more source
Two-color un-cooled narrow-gap MCT (mercury-cadmium-telluride) semiconductor thin layers, grown by liquid phase epitaxy or molecular beam epitaxy methods on high resistivity CdZnTe or GaAs substrates, with bow-type antennas were considered both as sub ...
F.F. Sizov
doaj +1 more source
The correlation between parameters of gallium arsenic epitaxy layers and technology of growth’s process [PDF]
The correlation between mobility and carriers concentration and growth’s conditions of gallium arsenic layers by liquid phase epitaxy is established. It is possible to obtain layers with required mobility and concentration of charge carriers by changing ...
A. V. Karimov +2 more
doaj +1 more source
Review of GaN Thin Film and Nanorod Growth Using Magnetron Sputter Epitaxy
Magnetron sputter epitaxy (MSE) offers several advantages compared to alternative GaN epitaxy growth methods, including mature sputtering technology, the possibility for very large area deposition, and low-temperature growth of high-quality electronic ...
Aditya Prabaswara +5 more
doaj +1 more source
Oscillations of As Concentration and Electron-to-Hole Ratio in Si-Doped GaAs Nanowires
III–V nanowires grown by the vapor–liquid–solid method often show self-regulated oscillations of group V concentration in a catalyst droplet over the monolayer growth cycle.
Vladimir G. Dubrovskii, Hadi Hijazi
doaj +1 more source
2D Ruddlesden–Popper (RP) halide perovskites with natural multiple quantum well structures are an ideal platform to integrate into vertical heterostructures, which may introduce plentiful intriguing optoelectronic properties that are not accessible in a ...
Yang Hu (315392) +9 more
core +1 more source
Surface Photovoltage Study of GaAsSbN and GaAsSb Layers Grown by LPE for Solar Cells Applications
The properties of GaAsSbN and GaAsSb layers grown by liquid-phase epitaxy on n-GaAs substrates were investigated in a comparative plan with a view of their possible application in multi-junction solar cells.
Vesselin Donchev +2 more
doaj +1 more source

