Results 21 to 30 of about 5,232 (243)

Liquid Phase Epitaxy of SiC

open access: yes, 2007
  Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by ...
Yakimova, Rositsa,, Syväjärvi, Mikael,
core   +1 more source

Growth of GaSb and GaInAsSb layers for thermophotovoltaic cells by liquid phase epitaxy [PDF]

open access: yes, 2008
GaSb based cells as receivers in thermophotovoltaic system have attracted great interest and been extensively studied in the recent 15 years. Although nowadays the manufacturing technologies have made a great progress, there are still some details need ...
Yin ZQ   +6 more
core   +1 more source

Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy

open access: yes, 2004
The Gal(1-x)Mn(x)Sb epilayer was prepared on the n-type GaSb substrate by liquid phase epitaxy. The structure of the Gal(1-x)Mn(x)Sb epilayer was analyzed by double-crystal X-ray diffraction.
Chen CL   +7 more
core   +1 more source

Solution‐Processed Thin‐Film Transistors With Tunable Temporal Dynamics for Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
Solution‐processed CNT and CNT/P3HT ion‐gated transistors exhibit materials‐defined synaptic timescales: fast CNT devices for high‐frequency spiking and slow hybrid devices for temporal integration. Embedding these dynamics into coupled reservoir‐computing and spiking neural network simulations reveals that a Hybrid‐Reservoir / CNT‐SNN architecture ...
Kevin Schnittker   +5 more
wiley   +1 more source

Sustainable Electrochemical Synthesis of High‐Quality MXenes: Mechanistic Insights, Applications, Challenges, and Technological Prospects

open access: yesAdvanced Functional Materials, EarlyView.
Electrochemical etching provides an eco‐friendly alternative to hazardous HF methods for MXene production. This approach facilitates the selective isolation of the A‐layer from MAX phases with tunable surface terminations. Controlling voltage, electrolytes, temperature, and duration enables the optimal structural integrity. Nevertheless, existing scale
Jagdeep Singh   +4 more
wiley   +1 more source

Magnetic Hyperfine Structure of Epitaxial Films of Nickel Ferrite

open access: yesФізика і хімія твердого тіла, 2016
Comparative NGR study of the parameters of the magnetic hyperfine structure of epitaxial NiFe2O4 films grown on MgO single-crystal substrates of orientations of (100) and (111) by liquid phase epitaxy (LPE) and chemical transport reactions (CTR) is ...
S. I. Yushchuk   +2 more
doaj   +1 more source

Role of Liquid Composition in the Transient Liquid Assisted Growth of Superconducting YBa2Cu3O7‐δ Films

open access: yesAdvanced Materials, EarlyView.
The Y supersaturation in the [Ba‐Cu(I/II)‐O] transient liquid composition is the driving force toward YBCO nucleation and growth in TLAG. Tuning the initial (Ba:Cu) molar ratio in the ink composition determines the YBCO epitaxial nucleation through supersaturation control.
Lavinia Saltarelli   +12 more
wiley   +1 more source

Organometallic perovskite single crystals grown on lattice-matched substrate for photodetection

open access: yesNano Materials Science, 2020
In this work, we demonstrate that an organometallic perovskite (OP) single crystal for effective photodetection can be grown on a gold (Au)-decorated substrate using liquid phase epitaxy.
Xin Wang   +10 more
doaj   +1 more source

Lead Halide Perovskite Photoelectrocatalysis

open access: yesAdvanced Materials, EarlyView.
Lead halide perovskite semiconductors have emerged as highly promising materials for solar fuel and chemical synthesis. This perspective discusses advances made in the rational photoelectrode design to improve solar‐to‐chemical conversion, product scope, and scalability.
Virgil Andrei
wiley   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

open access: yesAdvanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci   +12 more
wiley   +1 more source

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