Results 21 to 30 of about 28,350 (278)

On the 50th anniversary of the Scientific Research Company “Electron-Carat”

open access: yesTekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2022
The article is dedicated to the Scientific Research Company "Electron-Carat", which was founded in 1972 as the Lviv Research and Development Institute of Materials - the leading developer of the state-of-art materials.
Mykola Vakiv
doaj   +1 more source

Growing of heteroepitaxial layers on lattice mismatched substrates by the method of scanning liquid phase epitaxy

open access: yesTekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2020
Heterostructures with lattice mismatched and compositionally different layers are widely used in modern electronic and optoelectronic device engineering.
Vadym Tsybulenko, Stanislav Shutov
doaj   +1 more source

Technological features of the method of liquid-phase epitaxy when growing InP/GaInAsP heterostructures

open access: yesКонденсированные среды и межфазные границы, 2021
Semiconductor devices of quantum electronics based on InP/GaInAsP heterostructures require the creation of non-defective chips for emitting devices and photodetectors.
Mikhail G. Vasil’ev   +4 more
doaj   +1 more source

Liquid phase epitaxy of GaAlAs on GaAs substrates with fine surface corrugations [PDF]

open access: yes, 1974
Liquid phase epitaxy of GaAlAs was performed on GaAs fine surface corrugations.
Aiki, K.   +5 more
core   +1 more source

Liquid‐Phase Quasi‐Epitaxial Growth of Highly Stable, Monolithic UiO‐66‐NH2 MOF thin Films on Solid Substrates

open access: yesChemistryOpen, 2020
High quality, monolithic UiO‐66‐NH2 thin films on diverse solid substrates have been prepared via a low temperature liquid phase epitaxy method. The achievement of continuous films with low defect densities and great stability against high temperatures ...
Dr. Tawheed Hashem   +5 more
doaj   +2 more sources

Submilliamp threshold InGaAs-GaAs strained layer quantum-well laser [PDF]

open access: yes, 1990
Strained-layer InGaAs-GaAs single-quantum-well buried-heterostructure lasers were fabricated by a hybrid beam epitaxy and liquid-phase epitaxy technique. Very low threshold currents, 2.4 mA for an uncoated laser (L=425 μm) and 0.75 mA for a coated laser (
Chen, T. R.   +6 more
core   +1 more source

Cd diffused mesa-substrate buried heterostructure InGaAsP/InP laser [PDF]

open access: yes, 1985
A new type of buried heterostructure InGaAsP/InP lasers grown by a single-step liquid phase epitaxy on Cd diffused mesa substrate is described. These lasers exhibit excellent current and optical confinement.
Kapon, E.   +5 more
core   +1 more source

Detection of IR and sub/THz radiation using MCT thin layer structures: design of the chip, optical elements and antenna pattern

open access: yesSemiconductor Physics, Quantum Electronics & Optoelectronics, 2016
Two-color un-cooled narrow-gap MCT (mercury-cadmium-telluride) semiconductor thin layers, grown by liquid phase epitaxy or molecular beam epitaxy methods on high resistivity CdZnTe or GaAs substrates, with bow-type antennas were considered both as sub ...
F.F. Sizov
doaj   +1 more source

The correlation between parameters of gallium arsenic epitaxy layers and technology of growth’s process [PDF]

open access: yesТехнологія та конструювання в електронній апаратурі, 2009
The correlation between mobility and carriers concentration and growth’s conditions of gallium arsenic layers by liquid phase epitaxy is established. It is possible to obtain layers with required mobility and concentration of charge carriers by changing ...
A. V. Karimov   +2 more
doaj   +1 more source

Review of GaN Thin Film and Nanorod Growth Using Magnetron Sputter Epitaxy

open access: yesApplied Sciences, 2020
Magnetron sputter epitaxy (MSE) offers several advantages compared to alternative GaN epitaxy growth methods, including mature sputtering technology, the possibility for very large area deposition, and low-temperature growth of high-quality electronic ...
Aditya Prabaswara   +5 more
doaj   +1 more source

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