Results 21 to 30 of about 28,350 (278)
On the 50th anniversary of the Scientific Research Company “Electron-Carat”
The article is dedicated to the Scientific Research Company "Electron-Carat", which was founded in 1972 as the Lviv Research and Development Institute of Materials - the leading developer of the state-of-art materials.
Mykola Vakiv
doaj +1 more source
Heterostructures with lattice mismatched and compositionally different layers are widely used in modern electronic and optoelectronic device engineering.
Vadym Tsybulenko, Stanislav Shutov
doaj +1 more source
Semiconductor devices of quantum electronics based on InP/GaInAsP heterostructures require the creation of non-defective chips for emitting devices and photodetectors.
Mikhail G. Vasil’ev +4 more
doaj +1 more source
Liquid phase epitaxy of GaAlAs on GaAs substrates with fine surface corrugations [PDF]
Liquid phase epitaxy of GaAlAs was performed on GaAs fine surface corrugations.
Aiki, K. +5 more
core +1 more source
High quality, monolithic UiO‐66‐NH2 thin films on diverse solid substrates have been prepared via a low temperature liquid phase epitaxy method. The achievement of continuous films with low defect densities and great stability against high temperatures ...
Dr. Tawheed Hashem +5 more
doaj +2 more sources
Submilliamp threshold InGaAs-GaAs strained layer quantum-well laser [PDF]
Strained-layer InGaAs-GaAs single-quantum-well buried-heterostructure lasers were fabricated by a hybrid beam epitaxy and liquid-phase epitaxy technique. Very low threshold currents, 2.4 mA for an uncoated laser (L=425 μm) and 0.75 mA for a coated laser (
Chen, T. R. +6 more
core +1 more source
Cd diffused mesa-substrate buried heterostructure InGaAsP/InP laser [PDF]
A new type of buried heterostructure InGaAsP/InP lasers grown by a single-step liquid phase epitaxy on Cd diffused mesa substrate is described. These lasers exhibit excellent current and optical confinement.
Kapon, E. +5 more
core +1 more source
Two-color un-cooled narrow-gap MCT (mercury-cadmium-telluride) semiconductor thin layers, grown by liquid phase epitaxy or molecular beam epitaxy methods on high resistivity CdZnTe or GaAs substrates, with bow-type antennas were considered both as sub ...
F.F. Sizov
doaj +1 more source
The correlation between parameters of gallium arsenic epitaxy layers and technology of growth’s process [PDF]
The correlation between mobility and carriers concentration and growth’s conditions of gallium arsenic layers by liquid phase epitaxy is established. It is possible to obtain layers with required mobility and concentration of charge carriers by changing ...
A. V. Karimov +2 more
doaj +1 more source
Review of GaN Thin Film and Nanorod Growth Using Magnetron Sputter Epitaxy
Magnetron sputter epitaxy (MSE) offers several advantages compared to alternative GaN epitaxy growth methods, including mature sputtering technology, the possibility for very large area deposition, and low-temperature growth of high-quality electronic ...
Aditya Prabaswara +5 more
doaj +1 more source

