InGaAsP/InP undercut mesa laser with planar polyimide passivation [PDF]
, 1983 An undercut mesa laser is fabricated on an n + -InP substrate using a single step liquid phase epitaxy growth process and a planar structure is obtained by using a polyimide filling layer.
Chen, T. R. +7 more
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Mass transfer in liquid-phase epitaxy of two-layer systems [PDF]
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2012 A liquid phase epitaxy diffusion model of a two-layer system at instable cooling speed of the solution-melt has been developed. It was discovered that the transition process continues even after the termination of cooling, due to which the layer growth ...
Dranchuk S. M. +2 more
doaj +2 more sources
Room-temperature operation of GaAs Bragg-mirror lasers [PDF]
, 1976 Room-temperature operation of GaAs distributed Bragg reflector lasers is reported. The diodes are fabricated from conventional double heterostructures involving only a single step of liquid-phase epitaxy.
Katzir, A. +4 more
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Oscillations of As Concentration and Electron-to-Hole Ratio in Si-Doped GaAs Nanowires
Nanomaterials, 2020 III–V nanowires grown by the vapor–liquid–solid method often show self-regulated oscillations of group V concentration in a catalyst droplet over the monolayer growth cycle.
Vladimir G. Dubrovskii, Hadi Hijazi
doaj +1 more source
Monolithic integration of a very low threshold GaInAsP laser and metal-insulator-semiconductor field-effect transistor on semi-insulating InP [PDF]
, 1982 Monolithic integration of 1.3-µm groove lasers and metal-insulator-semiconductor field-effect transistors (MISFET) is achieved by a simple single liquid phase epitaxy (LPE) growth process.
Bar-Chaim, N. +5 more
core +1 more source
Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si [PDF]
, 2016 Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates.
Dubrovskii, Vladimir G. +8 more
core +2 more sources
Surface Photovoltage Study of GaAsSbN and GaAsSb Layers Grown by LPE for Solar Cells Applications
Energies, 2022 The properties of GaAsSbN and GaAsSb layers grown by liquid-phase epitaxy on n-GaAs substrates were investigated in a comparative plan with a view of their possible application in multi-junction solar cells.
Vesselin Donchev +2 more
doaj +1 more source
Ultralow threshold graded-index separate-confinement heterostructure single quantum well (Al,Ga)As lasers [PDF]
, 1988 Broad area graded‐index separate‐confinement heterostructure single quantum well lasers grown by molecular‐beam epitaxy (MBE) with threshold current density as low as 93 A/cm^2 (520 μm long) have been fabricated.
Bar-Chaim, N. +7 more
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Optical surface waves in periodic layered medium grown by liquid phase epitaxy [PDF]
, 1978 Optical surface waves propagating along the surface of a multilayer stack have been observed. The multilayer stack is grown by liquid phase epitaxy.
Chen, P. C., Ng, W., Yariv, A., Yeh, P.
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Morphological instability, evolution, and scaling in strained epitaxial films: An amplitude equation analysis of the phase field crystal model [PDF]
, 2010 Morphological properties of strained epitaxial films are examined through a mesoscopic approach developed to incorporate both the film crystalline structure and standard continuum theory.
C. J. Humphreys +4 more
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