Results 51 to 60 of about 5,232 (243)
Low-threshold, mirrorless emission at 981nm in an Yb,Gd,Lu:KYW inverted rib waveguide laser
In this work, we demonstrate 3-level laser operation in a Yb,Gd,Lu:KYW waveguide laser fabricated by combination of liquid phase epitaxy and Ar+ ion beam milling. Laser emission was observed at 981 nm with an absorbed threshold power of 23 mW and a slope
Aguiló, M. +6 more
core +1 more source
Selective Area Growth of Magnetic Garnet Crystals by Liquid-Phase Epitaxy
, 1999 Selective area growth of magnetic garnet crystals was studied by liquid-phase epitaxy. The garnet layers grown on Ti-masked substrates were analyzed under a scanning electron microscope, and by X-ray diffraction measurements, energy-dispersive X-ray ...
T. Mizumoto, H. Yokoi
core +1 more source
ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam +3 more
wiley +1 more source
Physical-technological bases of reception sharp p–n-transition
Технологія та конструювання в електронній апаратурі, 2006 A method for obtaining an abrupt p–n junction by liquid-phase epitaxy is presented. It consists in the growth of a thin intermediate p-type layer on a heavily doped p+ substrate, followed by the growth of an n-type layer from a melt cooled at a ...
A. V. Karimov +3 more
doaj
Borophene‐based sensing platforms: Pioneering ultrasensitive detection
FlexMat, EarlyView.Schematic Diagram of Performance Optimization Strategies and Sensing Application Characteristics of Two‐Dimensional Boron‐Based Materials in Novel Sensors. Abstract Borophene is an emerging two‐dimensional (2D) material. Since significant breakthroughs were achieved in the experimental synthesis of borophene, the exploration and development of ...
Chi Yuan, Yanpeng Ji, Yi Liu, Guoan Tai
wiley +1 more source
, 1998 When liquid phase epitaxy regrowth at 780 degrees C for 2 h is applied to the samples after molecular beam epitaxy, a decrease of the threshold current density in strained InGaAs/GaAs quantum well lasers by a factor of 3 to 4 is obtained. We suggest that
Ge WK +5 more
core
CREATION AND INVESTIGATION OF PARAMETERS OF SEMICONDUCTOR DEVICES ON THE BASED AlAs-GaAs - FILMS
Вестник. Серия физическая, 2009 A cheap thin-film phototransducer with Аu/n - GaАs/n+ - GаАs/n – AlGaAs structure that was formed using a molten solution by the method of growth separation during liquid-phase epitaxy has been developed.
V. S. Antoschenko +3 more
doaj
Nanoscale Ga/Al substituted yttrium iron garnet films by liquid phase epitaxy
AIP AdvancesYttrium iron garnet (YIG) has minimum damping factor and low ferromagnetic resonance (FMR) linewidth, making it a preferred material for low loss microwave and spintronic devices.
Yuanjing Zhang +11 more
doaj +1 more source
Information &Functional Materials, EarlyView.This review systematically summarizes two‐dimensional layered and nonlayered oxides, focusing on their synthesis, properties, and post‐Moore applications in transistors, gate dielectrics, optoelectronics, and ferroelectric/magnetic devices. It also discusses challenges including scalable growth and interface engineering, along with future industrial ...
Xinjie Hou +5 more
wiley +1 more source
Vibrational Exfoliation of 2D Materials
Small, EarlyView.Vibrational energy folds, fractures and exfoliates atomically and molecularly thin materials. Combining experimentation and computational methods, this unique vibrational synthesis pathway is revealed. This process overcomes barriers of existing approaches by processing 1000 g/L dispersions without loss in yield.
Aadam Rabani +5 more
wiley +1 more source