Results 51 to 60 of about 28,350 (278)

Heterointerface‑Enabled Electrocatalysis for Efficient Energy Conversion

Advanced Science, EarlyView.
Functionally distinct A/B materials can be integrated at the nanoscale to create customized heterointerfaces with tunable band alignment and charge redistribution, providing fast electron and ion transport channels as well as cooperative dual active sites.
Liuru Fang, Hsiwen Wu, Hengyue Xu, Jie Zhang   +3 more
wiley   +1 more source

Synaptic κ‐Ga2O3 Photodetectors for Privacy‐Enhancing Neuromorphic Computing

Advanced Science, EarlyView.
We report on a single‐element neuromorphic sensor based on the persistent photoconductivity (PPC) of κ‐phase Ga2O3 capable of sensing ultraviolet light and harnessing intrinsic data privacy. The approach establishes a materials‐enabled pathway toward compact, intelligent, and privacy‐enhancing optoelectronic hardware for next‐generation edge systems ...
Yanqing Jia, Heming Lin, Hongliang Chang, Wenqing Niu, Yue Wang, Hang Lu, Abdullah AlQuwayzani, Yara Banda, Long Chen, Qingxiao Wang, Bambar Davaasuren, Mohamed Ben Hassine, Tien Khee Ng, Boon S. Ooi   +13 more
wiley   +1 more source

Solution‐Processed Nickel Oxide as Efficient Hole Transport Layers in Inverted Perovskite Solar Cells

Advanced Science, EarlyView.
This review summarizes recent advances in four mainstream solution‐based techniques for synthesizing NiOx hole‐transport layers for high‐performance perovskite photovoltaic cells, and highlights the key challenges and future prospects for achieving high efficiency, long‐term stability, and low‐cost perovskite photovoltaic technologies toward ...
Zheng Wu, Zeliang Qiu, Yuxin Tao, Yuyang Qiu, Yuwei Duan, Jianxing Xia, Feng Li, Qiang Peng   +7 more
wiley   +1 more source

Progress in Strain Engineering of 2D‐Integrated Heterostructures for Ultrasensitive Sensors

Advanced Science, EarlyView.
 . ABSTRACT Two‐dimensional (2D) integrated heterostructures have emerged as a cornerstone in the advancement of next‐generation sensor technologies. These heterostructures, which combine materials with different dimensionalities, have led to significant breakthroughs in sensing performance and device integration.
That Buu Ton, Tuan Sang Tran, Duc Khanh Tran, Van Thanh Dau, Dzung Viet Dao   +4 more
wiley   +1 more source

Recent Advances and Challenges in Ammonia‐Hydrogen Energy Conversion

Advanced Science, EarlyView.
This work summarizes the latest progress of various catalytic methods in ammonia‐hydrogen energy conversion. The challenges and outlook of ammonia‐hydrogen energy conversion system are also emphasized. This work expects to build a blueprint of renewable and efficient ammonia‐hydrogen energy conversion systems under mild conditions.
Menghao Lv, Runchao Qin, Jianshuo Chen, Kaiwen Yang, Jianwei Lu, Weiwei Lei, Yifu Yu   +6 more
wiley   +1 more source

Application of ferrite-garnet epitaxial structures in ultra-high-frequency electronics

Технологія та конструювання в електронній апаратурі, 2005
Single-crystal iron-yttrium garnet (IYG) films with thicknesses ranging from a few micrometers to 92 μm were grown using the liquid-phase epitaxy method. Three methods of etching FeYG films were used to fabricate devices based on magnetostatic waves: ion
S. I. Yushchuk, S. A. Yuryev, P. S. Kostyuk, V. I. Bondar   +3 more
doaj  

Semiconductor diode laser material and devices with emission in visible region of the spectrum [PDF]

Two alloy systems, (AlGa)As and (InGa)P, were studied for their properties relevant to obtaining laser diode operation in the visible region of the spectrum. (AlGa)As was prepared by liquid-phase epitaxy (LPE) and (InGa)P was prepared both by vapor-phase
Kressel, H., Ladany, I.
core   +1 more source

Superconductivity in single-crystalline, aluminum- and gallium-hyperdoped germanium

, 2019
Superconductivity in group IV semiconductors is desired for hybrid devices combining both semiconducting and superconducting properties. Following boron doped diamond and Si, superconductivity has been observed in gallium doped Ge, however the obtained ...
Grzybowski, Michał J., Heera, Viton, Helm, Manfred, Hübner, René, Mazur, Grzegorz P., Prucnal, Slawomir, Qin, Xin, Rebohle, Lars, Sawicki, Maciej, Skorupa, Wolfgang, Voelskow, Matthias, Wang, Mao, Yuan, Ye, Zhou, Shengqiang   +13 more
core   +1 more source

Electrically Tunable Room‐Temperature Microwave Oscillations in GaN/AlN Triple‐Barrier Resonant Tunneling Diodes

Advanced Electronic Materials, EarlyView.
III‐nitride semiconductors have revolutionized optoelectronics, enabling transformative technologies such as high‐efficiency LEDs and lasers. However, their use in intersubband optoelectronics has remained limited. This work marks an important step forward by demonstrating highly coherent inter‐well resonant tunneling injection in III‐nitride ...
Jimy Encomendero, Naomi Pieczulewski, Eegene Chung, Vladimir Protasenko, David A. Muller, Debdeep Jena, Huili Grace Xing   +6 more
wiley   +1 more source

Embedded epitaxial growth of low-threshold GaInAsP/InP injection lasers [PDF]

, 1981
Single-growth liquid-phase embedded epitaxy in the GaInAsP/InP system is described, and a new heterostructure laser is grown using this technique. These lasers exhibit excellent current and optical confinement.
Chen, P. C., Margalit, S., Yariv, A., Yu, K. L.   +3 more
core   +1 more source