Results 1 to 10 of about 2,874 (202)

Strain induced anisotropy in liquid phase epitaxy grown nickel ferrite on magnesium gallate substrates [PDF]

Scientific Reports, 2022
This work focuses on the nature of magnetic anisotropy in 2.5–16 micron thick films of nickel ferrite (NFO) grown by liquid phase epitaxy (LPE). The technique, ideal for rapid growth of epitaxial oxide films, was utilized for films on (100) and (110 ...
Ying Liu, Peng Zhou, Sudhir Regmi, Rao Bidthanapally, Maksym Popov, Jitao Zhang, Wei Zhang, Michael R. Page, Tianjin Zhang, Arunava Gupta, Gopalan Srinivasan   +10 more
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Silicon allotropes by large-volume high-pressure techniques: crystal growth mechanisms, phase diagrams and hexagonal nanostructured Si-6H by in situ X-ray diffraction and computational methods. [PDF]

Acta Crystallogr B Struct Sci Cryst Eng Mater
In situ X‐ray diffraction is used for exploring Si crystallography and for studying phase‐transformation mechanisms in elemental Si and Na–Si systems. We present original results of hexagonal silicon, Si‐6H and a critical analysis of the past‐decade discoveries of silicon Si‐4H and Si24 using large‐volume high‐pressure techniques.Metastable allotropes ...
Courac A, Le Godec Y.
europepmc   +2 more sources

Epitaxy of LiNbO₃: Historical Challenges and Recent Success

Crystals, 2021
High-quality epitaxial growth of thin film lithium niobate (LiNbO3) is highly desirable for optical and acoustic device applications. Despite decades of research, current state-of-the-art epitaxial techniques are limited by either the material quality or
Bill Zivasatienraj, M. Brooks Tellekamp, W. Alan Doolittle   +2 more
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Liquid Phase Epitaxy growth and luminescence of Terbium-doped Gd3Ga5O12 crystalline layers [PDF]

EPJ Web of Conferences, 2023
Tb3+-doped single-crystalline Gd3Ga5O12 layers are grown by Liquid Phase Epitaxy on (111)-oriented undoped substrates, and their structure, composition, morphology and photo- and radioluminescence are studied.
Baillard Amandine, Douissard Paul-Antoine, Loiko Pavel, Wollesen Laura, Martin Thierry, Mathieu Eric, Ziegler Eric, Brasse Gurvan, Camy Patrice   +8 more
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Enhancement of the spin Seebeck effect owing to bismuth substitution in thermoelectric generators fabricated from LPE Bi-substituted YIG films

AIP Advances, 2021
Raising the thermoelectric voltage in spin thermoelectric generators is an important subject. We investigated the substitution of bismuth for yttrium to increase spin pumping at the paramagnetic metal and ferrimagnetic insulator (PM/FMI) interface, and ...
Masaaki Imamura, Hironori Asada, Ryo Nishimura, Keita Yamaguchi, Daisuke Tashima, Jiro Kitagawa   +5 more
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Channel Waveguides in Lithium Niobate and Lithium Tantalate

Molecules, 2020
Low-loss photonic waveguides in lithium niobate offer versatile functionality as nonlinear frequency converters, switches, and modulators for integrated optics.
Yi Lu, Benjamin Johnston, Peter Dekker, Michael J. Withford, Judith M. Dawes   +4 more
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On the 50th anniversary of the Scientific Research Company “Electron-Carat”

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2022
The article is dedicated to the Scientific Research Company "Electron-Carat", which was founded in 1972 as the Lviv Research and Development Institute of Materials - the leading developer of the state-of-art materials.
Mykola Vakiv
doaj   +1 more source

Growing of heteroepitaxial layers on lattice mismatched substrates by the method of scanning liquid phase epitaxy

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2020
Heterostructures with lattice mismatched and compositionally different layers are widely used in modern electronic and optoelectronic device engineering.
Vadym Tsybulenko, Stanislav Shutov
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Thick layers liquid-phase epitaxy method [PDF]

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2013
On the basis of the authors' model of mass transfer, a new method for thick layers epitaxy has been developed. The method provides for the growth of different parts of the layers in two-layer systems obtained from the solution-melt and allows to control ...
Dranchuk S. N., Zavadskiy V. A., Mokritskiy V. A.   +2 more
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Technological features of the method of liquid-phase epitaxy when growing InP/GaInAsP heterostructures

Конденсированные среды и межфазные границы, 2021
Semiconductor devices of quantum electronics based on InP/GaInAsP heterostructures require the creation of non-defective chips for emitting devices and photodetectors.
Mikhail G. Vasil’ev, Anton M. Vasil’ev, Alexander D. Izotov, Yuriy O. Kostin, Alexey A. Shelyakin   +4 more
doaj   +1 more source