Results 11 to 20 of about 15,647 (243)

Mass transfer in liquid-phase epitaxy of two-layer systems [PDF]

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2012
A liquid phase epitaxy diffusion model of a two-layer system at instable cooling speed of the solution-melt has been developed. It was discovered that the transition process continues even after the termination of cooling, due to which the layer growth ...
Dranchuk S. M., Zavadzkii V. A., Mokritskii V. A.   +2 more
doaj   +4 more sources

Structural, Electrical, And Optical Properties Of Inasxsb1-X Epitaxial Films Grown By Liquid-Phase Epitaxy [PDF]

, 2008
The InAsxSb1-x films were grown on (100) GaSb substrates by liquid-phase epitaxy, and their structural, electrical, and optical properties were investigated.
Gao FB, Zhang XW, Yin ZG, Wu JL, 陈诺夫, Wang Y, 刘蕾   +6 more
core   +2 more sources

Liquid‐Phase Quasi‐Epitaxial Growth of Highly Stable, Monolithic UiO‐66‐NH2 MOF thin Films on Solid Substrates

ChemistryOpen, 2020
High quality, monolithic UiO‐66‐NH2 thin films on diverse solid substrates have been prepared via a low temperature liquid phase epitaxy method. The achievement of continuous films with low defect densities and great stability against high temperatures ...
Dr. Tawheed Hashem, Dr. Elvia P. Valadez Sánchez, Dr. Peter G. Weidler, Dr. Hartmut Gliemann, Dr. Mohamed H. Alkordi, Prof. Christof Wöll   +5 more
doaj   +2 more sources

Graphitic platform for self-catalysed InAs nanowires growth by molecular beam epitaxy [PDF]

, 2014
We report the self-catalysed growth of InAs nanowires (NWs) on graphite thin films using molecular beam epitaxy via a droplet-assisted technique. Through optimising metal droplets, we obtained vertically aligned InAs NWs with highly uniform diameter ...
Anyebe, Ezekiel A., Benjamin J Robinson, Fal'ko, Vladimir; id_orcid, Ana M Sanchez, Sánchez, Ana M., Ezekiel A Anyebe, Oleg Kolosov, Veal, T. D. (Tim D.), Zhukov, Alexander, Anyebe, Ezekiel, Zhuang, Qiandong, Veal, Tim D, Robinson, Benjamin, Zhuang, Qian D, Robinson, Benjamin J, Mohana K Rajpalke, Anyebe, Ezekiel A, Rajpalke, Mohana K, Veal, Tim D., Fal?ko, Vladimir, Zhuang, Qian D., Sanchez, A. M., Robinson, Benjamin J., Rajpalke, Mohana K., Anderson, Frazer, Falko, Vladimir, Frazer Anderson, Fal’ko, Vladimir, Vladimir Fal’ko, Tim D Veal, Alexander Zhukov, Qian D Zhuang, Kolosov, Oleg, Sanchez, Ana M   +33 more
core   +1 more source

Liquid-phase explosive crystallization of electron-beam-evaporated a-Si films induced by flash lamp annealing [PDF]

, 2011
We succeed in the formation of micrometer-order-thick polycrystalline silicon (poly-Si) films through the flash-lamp-induced liquid-phase explosive crystallization (EC) of precursor a-Si films prepared by electron-beam (EB) evaporation.
Matsumura, Hideki, Ohdaira, Keisuke
core   +1 more source

Detection of IR and sub/THz radiation using MCT thin layer structures: design of the chip, optical elements and antenna pattern

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016
Two-color un-cooled narrow-gap MCT (mercury-cadmium-telluride) semiconductor thin layers, grown by liquid phase epitaxy or molecular beam epitaxy methods on high resistivity CdZnTe or GaAs substrates, with bow-type antennas were considered both as sub ...
F.F. Sizov
doaj   +1 more source

The correlation between parameters of gallium arsenic epitaxy layers and technology of growth’s process [PDF]

Технологія та конструювання в електронній апаратурі, 2009
The correlation between mobility and carriers concentration and growth’s conditions of gallium arsenic layers by liquid phase epitaxy is established. It is possible to obtain layers with required mobility and concentration of charge carriers by changing ...
A. V. Karimov, D. M. Yodgorova, E. N. Yakubov   +2 more
doaj   +1 more source

Review of GaN Thin Film and Nanorod Growth Using Magnetron Sputter Epitaxy

Applied Sciences, 2020
Magnetron sputter epitaxy (MSE) offers several advantages compared to alternative GaN epitaxy growth methods, including mature sputtering technology, the possibility for very large area deposition, and low-temperature growth of high-quality electronic ...
Aditya Prabaswara, Jens Birch, Muhammad Junaid, Elena Alexandra Serban, Lars Hultman, Ching-Lien Hsiao   +5 more
doaj   +1 more source

Oscillations of As Concentration and Electron-to-Hole Ratio in Si-Doped GaAs Nanowires

Nanomaterials, 2020
III–V nanowires grown by the vapor–liquid–solid method often show self-regulated oscillations of group V concentration in a catalyst droplet over the monolayer growth cycle.
Vladimir G. Dubrovskii, Hadi Hijazi
doaj   +1 more source

Liquid-Phase van der Waals Epitaxy of a Few-Layer and Unit-Cell Thick Ruddlesden–Popper Halide Perovskite

, 2022
2D Ruddlesden–Popper (RP) halide perovskites with natural multiple quantum well structures are an ideal platform to integrate into vertical heterostructures, which may introduce plentiful intriguing optoelectronic properties that are not accessible in a ...
Yang Hu (315392), Toh-Ming Lu (1425295), Zonghuan Lu (4174840), Saloni Pendse (8082746), Xixing Wen (8764686), Lifu Zhang (2181524), Ru Jia (1915531), Gwo-Ching Wang (1542319), Jie Jiang (187037), Jian Shi (141852)   +9 more
core   +1 more source