Results 31 to 40 of about 15,647 (243)

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source

Xenes for Sustainable Energy: A Roadmap From First‐Principles Design to Practical Deployment

Advanced Materials Interfaces, EarlyView.
Emerging 2D Xenes are advancing from theoretical predictions toward practical energy‐storage and conversion technologies through the integration of first‐principles modelling, experimental synthesis, electrochemical validation, and AI‐assisted materials design, enabling accelerated discovery of high‐performance and sustainable electrochemical systems ...
Onur Karaman, Ceren Karaman
wiley   +1 more source

Obtaining of bilateral high voltage epitaxial p–i–n Si structures by LPE method [PDF]

Технологія та конструювання в електронній апаратурі, 2013
Silicon p–i–n-structures are usually obtained using conventional diffusion method or liquid phase epitaxy (LPE). In both cases, the formation of p- and n-layers occurs in two stages. This technological approach is quite complex.
N. M. Vakiv, S. I. Krukovsky, V. R. Tymchyshyn, A. P. Vas'kiv   +3 more
doaj   +2 more sources

Chip‐Integrated Metasurface‐GaAsSb Nanowire Array Photodetectors for Single‐Pixel Polarimetric Imaging

Advanced Optical Materials, EarlyView.
A 2×2 multiplexed GaAsSb nanowire photodetector array integrated with L‐shaped metasurfaces is developed for miniaturized infrared polarimetry. Leveraging non‐radiating anapole states that facilitate near‐field enhancement, the device demonstrates strong polarization selectivity at 835 nm.
Longsibo Huang, Ziyuan Li, Yitao Yang, Yang Yu, Lei Xu, Li Li, Songqin Zhang, Han Wang, Wenwu Pan, Chaohao Chen, Weiqi Jin, Wen Lei, Lorenzo Faraone, Chennupati Jagadish, Lan Fu   +14 more
wiley   +1 more source

Liquid phase epitaxy growth of AlxGayIn1-x-yPzAs1-zGaAs with direct band gap up to 2.0 eV

, 1998
III-V pentenary semiconductor AlGaInPAs with a direct band gap of up to 2.0 eV has been grown successfully on GaAs substrates by liquid phase epitaxy;(LPE).
徐自亮, Xu, ZL (reprint author), Chinese Acad Sci, Inst Mech, Natl Micrograv Lab China, Beijing 100080, Peoples R China., Xu WJ, Li L   +3 more
core   +1 more source

Surface‐Plasmon‐Coupled Blue InGaN/GaN Micro‐LEDs with Oxide–Metal–Oxide Capping Layer Compatible to Chip Fabrication Process

Advanced Optical Materials, EarlyView.
A sidewall‐integrated oxide–metal–oxide architecture is demonstrated to overcome efficiency degradation in ultra‐small InGaN/GaN micro‐LEDs. Conformal Al2O3 passivation combined with plasmonic Ag nanoparticles enables localized surface plasmon–exciton coupling, converting surface‐related nonradiative losses into radiative emission.
Pil‐Kyu Jang, Lee‐Woon Jang, Ohbin Kwon, Yeong‐Hoon Cho, Sangbum Kim, Sang‐Ik Lee, Seungjae Baek, Jiwon Park, Myeongjun Choi, Jaeseung Kim, Taehwan Kim, Sung‐Un Kim, Min‐Seok Lee, Yong‐Ho Ra, Ki Hoon Nam, Seung Min Kwak, Alexander Y. Polyakov, In‐Hwan Lee   +17 more
wiley   +1 more source

InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy

, 2007
The growth of InAsxSb1-x films on (100) GaSb substrates by liquid-phase epitaxy (LPE) has been investigated and epitaxial InAs0.3Sb0.7 films with InAs0.9Sb0.09 buffer layers have been successfully obtained.
Chen NF (Chen NuoFu), Liu L (Liu Lei), Liu L, Zhang XW, Gao FB (Gao Fubao), Gao, FB, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, PO Box 912, Beijing 100083, Peoples R China. 电子邮箱地址: fbgao@semi.ac.cn, Gao, FB (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, PO Box 912, Beijing 100083, Peoples R China., Wu JL (Wu Jinliang), Gao FB, Yin ZG, Zhang XW (Zhang X. W.), Wu JL, 陈诺夫, Yin ZG (Yin Zhigang)   +13 more
core   +1 more source

Research Progress and Applications of 2D Antimonene

Applied Sciences, 2022
Antimonene has attracted much attention due to its excellent properties such as high carrier mobility, excellent thermoelectric performance and high stability.
Tingting Zhong, Lina Zeng, Zaijin Li, Li Sun, Zhongliang Qiao, Yi Qu, Guojun Liu, Lin Li   +7 more
doaj   +1 more source

Synaptic κ‐Ga2O3 Photodetectors for Privacy‐Enhancing Neuromorphic Computing

Advanced Science, EarlyView.
We report on a single‐element neuromorphic sensor based on the persistent photoconductivity (PPC) of κ‐phase Ga2O3 capable of sensing ultraviolet light and harnessing intrinsic data privacy. The approach establishes a materials‐enabled pathway toward compact, intelligent, and privacy‐enhancing optoelectronic hardware for next‐generation edge systems ...
Yanqing Jia, Heming Lin, Hongliang Chang, Wenqing Niu, Yue Wang, Hang Lu, Abdullah AlQuwayzani, Yara Banda, Long Chen, Qingxiao Wang, Bambar Davaasuren, Mohamed Ben Hassine, Tien Khee Ng, Boon S. Ooi   +13 more
wiley   +1 more source

Flexoelectricity in Photoconversion: Fundamentals, Materials, and Outlooks

Advanced Science, EarlyView.
Mechanical bending of a flexible cantilever induces a strain gradient in the photoactive material. The resulting flexoelectric field couples with photovoltaic and photoconductive effects, modulating charge generation, separation, and collection. A comparative analysis of oxide perovskites, halide perovskites, and two‐dimensional materials is presented,
Xiang Huang, Feng Li, Rongkun Zheng
wiley   +1 more source