Results 51 to 60 of about 15,647 (243)

Elementary Steps of Energy Conversion in Strongly Correlated Systems: Beyond Single Quasiparticles and Rigid Bands

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
This article reviews the fundamental consequences of strong correlations on excitations and elementary steps of energy conversion leading to new opportunities to control energy conversion. Examples include friction at surfaces, thermal transport, and photovoltaic energy conversion.
Vasily Moshnyaga, Peter E. Blöchl, Vitaly Bruchmann‐Bamberg, Annika Dehning, Lukas Allen‐Rump, Christopher Hausmann, Matthias Krüger, Amrith Rathnakaran, Sangeeta Rajpurohit, Daniel Steil, Christoph Flathmann, Jörg Hoffmann, Michael Seibt, Cynthia Volkert, Christian Jooss   +14 more
wiley   +1 more source

Low-threshold, mirrorless emission at 981nm in an Yb,Gd,Lu:KYW inverted rib waveguide laser

In this work, we demonstrate 3-level laser operation in a Yb,Gd,Lu:KYW waveguide laser fabricated by combination of liquid phase epitaxy and Ar+ ion beam milling. Laser emission was observed at 981 nm with an absorbed threshold power of 23 mW and a slope
Aguiló, M., Bolaños, W., Shepherd, D.P., Choudhary, Amol, Díaz, F., Carvajal, J.J., Pradeesh, Kannan   +6 more
core   +1 more source

Selective Area Growth of Magnetic Garnet Crystals by Liquid-Phase Epitaxy

, 1999
Selective area growth of magnetic garnet crystals was studied by liquid-phase epitaxy. The garnet layers grown on Ti-masked substrates were analyzed under a scanning electron microscope, and by X-ray diffraction measurements, energy-dispersive X-ray ...
T. Mizumoto, H. Yokoi
core   +1 more source

Low‐Dimensional Materials and Van Der Waals Heterostructures for Energy Application: A Comprehensive Review

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam, Sajjad Ali, Pir Muhammad Ismail, ABM Sharif Hossain   +3 more
wiley   +1 more source

Massive Dirac fermion observed in lanthanide-doped topological insulator thin films

, 2015
This publication arises from research funded by the John Fell Oxford University Press (OUP) Research Fund, a DARPA MESO Project (No. N66001-11-1-4105), and funding from the European Union Seventh Framework Programme under Grant Agreement 312483 – ESTEEM2
Srot, V, Van Aken, P. A., Collins-McIntyre, LJ, Chen, YL, Harrison, SE, Collins-McIntyre, Liam James, Kellock, A., Parkin, S.S.P., Chen, Schönherr, P, Vailionis, A., Chen, Y. L., Schönherr, Piet, Hesjedal, Thorsten, Pushp, A, Pushp, A., Harris, J.S., Srot, V., Hesjedal, T., Zhou, B, Collins-McIntyre, L., Parkin, S. S P, van Aken, P.A., Harris, J. S., Kellock, A.J., Harris, J., Kellock, AJ, van Aken, P., Hesjedal, T, Parkin, S., Parkin, SSP, Harrison, S., Collins-McIntyre, Liam J., Zhou, B., Harrison, S. E., Harris, JS, Kellock, A. J., Schönherr, P., van Aken, PA, Vailionis, A, Harrison, S.E.   +40 more
core   +1 more source

Physical-technological bases of reception sharp p–n-transition

Технологія та конструювання в електронній апаратурі, 2006
A method for obtaining an abrupt p–n junction by liquid-phase epitaxy is presented. It consists in the growth of a thin intermediate p-type layer on a heavily doped p+ substrate, followed by the growth of an n-type layer from a melt cooled at a ...
A. V. Karimov, D. M. Yodgorova, Sh.Sh. Yuldashev, Sh. Sh. Boltaeva   +3 more
doaj  

Borophene‐based sensing platforms: Pioneering ultrasensitive detection

FlexMat, EarlyView.
Schematic Diagram of Performance Optimization Strategies and Sensing Application Characteristics of Two‐Dimensional Boron‐Based Materials in Novel Sensors. Abstract Borophene is an emerging two‐dimensional (2D) material. Since significant breakthroughs were achieved in the experimental synthesis of borophene, the exploration and development of ...
Chi Yuan, Yanpeng Ji, Yi Liu, Guoan Tai
wiley   +1 more source

Threshold reduction in strained-layer InGaAs/GaAs quantum well lasers by liquid phase epitaxy regrowth

, 1998
When liquid phase epitaxy regrowth at 780 degrees C for 2 h is applied to the samples after molecular beam epitaxy, a decrease of the threshold current density in strained InGaAs/GaAs quantum well lasers by a factor of 3 to 4 is obtained. We suggest that
Ge WK, Yang GW, Lu LW, Zhang YH, Wang J, Lu LW,Chinese Acad Sci,Inst Semicond,Integrated Optoelect Lab,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.   +5 more
core  

CREATION AND INVESTIGATION OF PARAMETERS OF SEMICONDUCTOR DEVICES ON THE BASED AlAs-GaAs - FILMS

Вестник. Серия физическая, 2009
A cheap thin-film phototransducer with Аu/n - GaАs/n+ - GаАs/n – AlGaAs structure that was formed using a molten solution by the method of growth separation during liquid-phase epitaxy has been developed.
V. S. Antoschenko, Sh. B. Baiganatova, T. I. Taurbayev, Yu. V. Frantsev   +3 more
doaj  

Nanoscale Ga/Al substituted yttrium iron garnet films by liquid phase epitaxy

AIP Advances
Yttrium iron garnet (YIG) has minimum damping factor and low ferromagnetic resonance (FMR) linewidth, making it a preferred material for low loss microwave and spintronic devices.
Yuanjing Zhang, Qiang Xue, Feng Wang, Han Li, Zhuo Li, Shuting Yang, Yingli Liu, Aimin Hu, Lichuan Jin, Qiye Wen, Huaiwu Zhang, Qinghui Yang   +11 more
doaj   +1 more source