Results 41 to 50 of about 15,647 (243)

Large‐Scale Growth of Self‐Poled Ferroelectric Rashba Semiconductor α‐GeTe(111) Thin Films: A Crucial Step Towards Future CMOS‐Compatible Ferroelectric Spintronic Devices

open access: yesAdvanced Science, EarlyView.
Ferroelectric Rashba semiconductors promise ultralow‐power devices but lack industry‐quality films. This work demonstrates CMOS‐compatible fabrication of high‐quality α‐GeTe(111) films via magnetron sputtering, enabled by a 5 nm Sb2Te3 seed layer. Structural and ferroelectric analyses show robust, switchable polarization comparable to MBE films, paving
Jules Lagrave   +14 more
wiley   +1 more source

Junction Physics and Architectural Paradigms in Optoelectronic Semiconductor Fibers

open access: yesAdvanced Science, EarlyView.
Optoelectronic fibers are emerging as a key platform for distributed sensing, energy harvesting, and optical communication in deformable systems. Their performance is fundamentally governed by junction formation under confined, dynamic processing conditions.
Hailiang Wang   +4 more
wiley   +1 more source

Topological Materials and Related Applications

open access: yesAdvanced Electronic Materials, EarlyView.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti   +9 more
wiley   +1 more source

Comparison of Vapor Phase and Liquid Phase Epitaxy for Deposition of Crystalline Si on Glass

open access: yes, 1996
We compare the suitability of vapor phase and liquid phase epitaxy in a two step deposition process for the formation of thin crystalline Si films on glass substrates. In a first deposition step, we form polycrystalline Si seeding layers on glass.
J. H. Werner   +3 more
core   +1 more source

InGaP/GaAs/InGaAs Multijunction Flexible Photovoltaics With Chemical Robustness and Radiation Hardness for Unassisted Electrocatalysis and Space Applications

open access: yesAdvanced Energy Materials, EarlyView.
A flexible InGaP/GaAs/InGaAs triple‐junction platform encapsulated with ultrathin glass enables unassisted electrocatalysis and space applications by providing robust protection against chemically aggressive and radiation‐rich environments. This work establishes a unified III–V multijunction photovoltaic platform that bridges space photovoltaics and ...
Sukkyu Hong   +10 more
wiley   +1 more source

Properties of double p+-InP/n-InGaAsP/n-InP heterojunctions obtained by LPE method [PDF]

open access: yesТехнологія та конструювання в електронній апаратурі, 2012
The double epitaxial p+-InP/n-InGaAsP/n-InP heterostructures with coinciding electrical and metallurgical boundaries has been obtained. Such coincidence is achieved due to growing an additional buffer n-InP layer and decreasing the time for growing an ...
N. M. Vakiv   +6 more
doaj   +1 more source

Advancements in Graphdiyne‐Based Multiscale Catalysts for Green Hydrogen Energy Conversion

open access: yesAdvanced Intelligent Discovery, EarlyView.
This review systematically explores the fundamental characteristics of graphdiyne (GDY), cutting‐edge field of GDY‐based multiscale catalysts within sustainable energy conversion systems.Special emphasis is placed on the structure‒property relationships in different reactions.
Qian Xiao, Lu Qi, Siao Chen, Yurui Xue
wiley   +1 more source

Application of ferrite-garnet epitaxial structures in ultra-high-frequency electronics

open access: yesТехнологія та конструювання в електронній апаратурі, 2005
Single-crystal iron-yttrium garnet (IYG) films with thicknesses ranging from a few micrometers to 92 μm were grown using the liquid-phase epitaxy method. Three methods of etching FeYG films were used to fabricate devices based on magnetostatic waves: ion
S. I. Yushchuk   +3 more
doaj  

Heterostructures on the basis of GaAs with quantum points of InAs for photo-electric transformers [PDF]

open access: yesTekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2008
Heterostructures based on GaAs with InAs quantum dots obtained in the process of liquid-phase epitaxy by the method of pulse cooling of saturated solution in indium or heterostructures containing quantum dots in the area of the p–n-junction were much ...
Maronchuk I. E., Dobrozhanskiy Yu. A.
doaj  

The Dimensional Revolution of Phosphorus: From Allotropicity to Battery System Applications

open access: yesENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Phosphorus‐based materials are promising high‐capacity anodes classified by dimension (0D–3D) to systematically explore their properties and composite strategies. When combined with materials such as carbon to form heterostructures, the electrical conductivity and stability are effectively enhanced.
Shuhan Zhang   +8 more
wiley   +1 more source

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