Results 61 to 70 of about 15,647 (243)
Information &Functional Materials, EarlyView.This review systematically summarizes two‐dimensional layered and nonlayered oxides, focusing on their synthesis, properties, and post‐Moore applications in transistors, gate dielectrics, optoelectronics, and ferroelectric/magnetic devices. It also discusses challenges including scalable growth and interface engineering, along with future industrial ...
Xinjie Hou +5 more
wiley +1 more source
Vibrational Exfoliation of 2D Materials
Small, EarlyView.Vibrational energy folds, fractures and exfoliates atomically and molecularly thin materials. Combining experimentation and computational methods, this unique vibrational synthesis pathway is revealed. This process overcomes barriers of existing approaches by processing 1000 g/L dispersions without loss in yield.
Aadam Rabani +5 more
wiley +1 more source
Obtaining of high-quality InP active layers in geterostructure’s composition for Gunn diodes [PDF]
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2010 It is shown that for epitaxial InP layers obtained by liquid-phase epitaxy complex dopping of indium melts by optimal concentrations of rare-earth Yb and isovalent element Al promotes useful increase of cleaning effect from background impurities and ...
Vakiv M. M. +4 more
doaj +2 more sources
Optimization of the concentration’s distribution of the carriers on thickness of epitaxial layers
Технологія та конструювання в електронній апаратурі, 2007 A piston-type device for liquid-phase epitaxy of AIIIBV semiconductor compounds has been modified. The possibility of controlling the impurity concentration gradient, which creates internal electric fields in the photodetecting and active regions of ...
A. V. Karimov +4 more
doaj
Strain–Engineered Method for Atomically Sharp Interfaces in 2D TMDC Lateral Heterostructures
Small Methods, EarlyView.ABSTRACT While strain is widely used to tune the properties of two–dimensional transition–metal dichalcogenides (TMDCs), its role in controlling chalcogen exchange and alloy formation at interfaces of lateral heterostructures (LHSs) needs further exploration.
Mariam Hakami +5 more
wiley +1 more source
Homogenization and two-scale models for liquid phase epitaxy
, 2009 We consider models for liquid phase epitaxy without and with elasticity. The models are based on continuum models for fluid flow and transport of adatoms in the liquid solution and a BCF–model for the growth of the solid phase.
Eck, Ch. +3 more
core +1 more source
Isotherm Theoretical Study of the AlxGa1-xAsySb1-y Quaternary Alloy Using the Regular Solution Approximation for Its Possible Growth via Liquid-Phase Epitaxy at Low Temperatures. [PDF]
Entropy (Basel), 2022 Gastellóu E +8 more
europepmc +1 more source
Journal of Microscopy, EarlyView.Abstract Measuring the bismuth (Bi) content of ternary gallium arsenide bismuthide (GaAsBi) alloys is important because it sensitively influences their bandgap, and Bi is known to segregate vertically to the surface and sometimes also laterally during growth, so elemental distribution maps need to be quantified.
T. Walther
wiley +1 more source
, 2008 Lattice matched Ga_(1-x)In_xAs_ySb_(1-y) quaternary alloy films for thermophotovoltaic cells were successfully grown on n-type GaSb substrates by liquid phase epitaxy.
Chen Nuofu +4 more
core
Growth of GaSb/InAs heterostructures by liquid phase epitaxy without substrate dissolution
Технологія та конструювання в електронній апаратурі, 2003 The features of GaSb/InAs heterostructure growth from the liquid phase are considered. A modified method of pulsed cooling of the solution–melt is proposed, which makes it possible to avoid dissolution of the InAs substrate when in contact with the ...
I. E. Maronchuk +3 more
doaj